High-performance MoS_(2)/p^(+)-Si heterojunction field-effect transistors by interface modulation

作     者：Yoonsok Kim Taeyoung Kim Eun Kyu Kim Yoonsok Kim;Taeyoung Kim;Eun Kyu Kim

作者机构：Department of Physics and Research Institute of Natural ScienceHanyang UniversitySeoul 04763Republic of Korea 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第7期

页      面：6500-6506页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIP)(No.NRF-2020R1A4A4078674) 

主　　题：molybdenum disulfide(MoS_(2)) transition metal dichalcogenide junction field-effect transistor dielectric layer interface trap 

摘      要：Molybdenum disulfide(MoS_(2)),one of transition metal dichalcogenides,is a promising semiconductor material for electronic or optoelectronic devices due to its favorably electronic ***,in metal-oxide semiconductor field-effect transistor(MOSFET)structures using MoS_(2),electrical performances such as mobility and subthreshold swing are suppressed by the interface trap density between the channel and dielectric ***,the electrical stability of such structures is compromised due to interface traps and that can be analyzed such as current hysteresis and transient ***,we demonstrate MoS_(2) heterojunction field-effect transistors(HFET)by applying MoS_(2)/p^(+)-Si heterojunctions and achieve high performance characteristics,including a mobility of 636.19 cm^(2)/(V∙s),a subthreshold swing of 67.4 mV/dec,minimal hysteresis of 0.05 V,and minimized transient ***,the HFET devices with varying the channel length demonstrated degradation of electrical performance with increasing the overlap area of the channel and dielectric *** results regarding MoS_(2)/p^(+)-Si HFETs resulted in the structural optimization of high-performance electronic devices for practical applications.