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Finite element simulation of hydrostatic stress in copper interconnects

Journal of Semiconductors 2011年第5期32卷 134-139页

作者：袁光杰陈冷 School of Materials Science and Engineering University of Science and Technology Beijing

This work focuses on numerical modeling of hydrostatic stress, which is critical to the formation of stress-induced voiding （SIV） in copper damascene interconnects. Using three-dimensional finite element analysis, the distribution of hydrostatic stress is examined in copper interconnects and models are based on the samples, which are fabricated in industry. In addition, hydrostatic stress is studied through the influences of different low-k dielectrics, barrier layers and line widths of copper lines, and the results indicate that hydrostatic stress is strongly dependent on these factors. Hydrostatic stress is highly non-uniform throughout the copper structure and the highest tensile hydrostatic stress exists on the top interface of all the copper lines.

关键词： copper interconnects hydrostatic stress stress-induced voiding finite element method

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Characterization of the arrangement feature of copper interconnects by Moir inversion method

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Theoretical & Applied Mechanics Letters 2012年第2期2卷 37-40页

作者： Qinghua Wang Satoshi Kishimoto Huimin Xie Kewei Xu Jianfeng Wang National Institute for Materials Science TsukubaIbaraki 305-0047Japan AML Department of Engineering MechanicsTsinghua UniversityBeijing 100084China School of Materials Science and Engineering Xi'an Jiaotong UniversityXi'an 710049China

This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam （FIB） Moire inversion method quantitatively. The curved FIB Moire patterns indicate that the copper interconnects are a series of curves with continuous variations instead of beelines. The control equation set of the copper interconnects central lines is attained through the Moire inversion method. This work can be extended to inspect the structural defects and provide a reliable support for the interconnects structure fabrication.

关键词： copper interconnects arrangement Moire inversion method focused ion-beam

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Characterization of the arrangement feature of copper interconnects by Moir inversion method

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Theoretical & Applied Mechanics Letters 2012年第2期 39-42页

作者： Satoshi Kishimoto National Institute for Materials Science TsukubaIbaraki 305-0047Japan

This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam(FIB) Moir’e inversion method *** curved FIB Moir’e patterns indicate that the copper interconnects are a series of curves with continuous variations instead of *** control equation set of the copper interconnects central lines is attained through the Moir’e inversion *** work can be extended to inspect the structural defects and provide a reliable support for the interconnects structure fabrication.

关键词： copper interconnects arrangement Moir’e inversion method focused ion-beam

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