Finite element simulation of hydrostatic stress in copper interconnects

作     者：袁光杰 陈冷 

作者机构：School of Materials Science and EngineeringUniversity of Science and Technology Beijing 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第5期

页      面：134-139页

核心收录：

学科分类：07[理学] 070102[理学-计算数学] 0701[理学-数学] 

基　　金：Proiect supported by the National Natural Science Foundation of China(No.50871016) 

主　　题：copper interconnects hydrostatic stress stress-induced voiding finite element method 

摘      要：This work focuses on numerical modeling of hydrostatic stress, which is critical to the formation of stress-induced voiding （SIV） in copper damascene interconnects. Using three-dimensional finite element analysis, the distribution of hydrostatic stress is examined in copper interconnects and models are based on the samples, which are fabricated in industry. In addition, hydrostatic stress is studied through the influences of different low-k dielectrics, barrier layers and line widths of copper lines, and the results indicate that hydrostatic stress is strongly dependent on these factors. Hydrostatic stress is highly non-uniform throughout the copper structure and the highest tensile hydrostatic stress exists on the top interface of all the copper lines.