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Enhanced thermoelectric performance in Cl-doped BiSbSe_(3) with optimal carrier concentration and effective mass

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Journal of Materials Science & Technology 2021年第11期70卷 67-72页

作者： Sining Wang Lizhong Su Yuting Qiu Yu Xiao Li-Dong Zhao School of Materials Science and Engineering Beihang UniversityBeijing 100191China Beihang School Beihang UniversityBeijing 100191China

Possessing inherently low thermal conductivity,BiSbSe_(3) is a promising thermoelectric material for medium ***,to substantially optimize the thermoelectric performance of BiSbSe_(3),researchers mainly focus on the strategies to improve its electrical transport *** these strongly coupled thermoelectric parameters,carrier concentration and effective mass are two intrinsic variables to decisively affect the electrical transport *** this work,Cl as a donor dopant is effective to provide extra electrons in n-type BiSbSe_(3),and the carrier concentration and effective mass can be well optimized simultaneously with increasing Cl content owing to the multiple conduction bands in BiSbSe_(3).What’s more,maximum weighted mobility~53 cm^(2)V^(-1)s^(-1)is obtained in Cl-doped BiSbSe_(3),which contributes to a largely enhanced power factor~4.8μW cm^(-1)K^(-2)at room temperature and outperforms other halogen-doped BiSbSe_(3) ***,combining the significantly enhanced power factor and maintained low thermal conductivity,a maximum ZT~1.0 is achieved in Cl-doped BiSbSe_(3) at 800 K.

关键词： BiSbSe_(3) Thermoelectric performance Effective mass carrier concentration

Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor

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Nano Research 2016年第4期9卷 1116-1124页

作者： Yihui Sun Xiaoqin Yan Xin Zheng Yichong Liu Yanwei Shen Yue Zhang State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Beijing Municipal Key Laboratory of New Energy Materials and Technologies University of Science and Technology Beijing Beijing 100083 China

Sandwich-style memristor devices were synthesized by electrochemical deposition with a ZnO film serving as the active layer between Al-doped ZnO （AZO） and Au electrodes. The carrier concentration of the ZnO films is controlled by adding HNO3 during the growth process. A resulting increase in carrier concentration from 10^17 to 10^19 cm^-3 was observed, along with a corresponding drop in the on--off ratio from 6,437% to 100%. The resistive switching characteristics completely disappeared when the carrier concentration was above 1029 cm-3, making it unsuitable for a memory device. The decreasing switching ratio is attributed to a reduction in the driving force for oxygen vacancy drift. Systematic analysis of the migration of oxygen vacancies is presented, including the concentration gradient and electrical potential gradient. Such oxygen vacancy migration dynamics provide insight into the mechanisms of the oxygen vacancy drift and provide valuable information for industrial production of memristor devices.

关键词： resistive switch carrier concentration driving force potential gradient concentration gradient

Low carrier concentration leads to high in-plane thermoelectric performance in n-type SnS crystals

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Science China Materials 2021年第12期64卷 3051-3058页

作者： Wenke He Tao Hong Dongyang Wang Xiang Gao Li-Dong Zhao School of Materials Science and Engineering Beihang UniversityBeijing 100191China Center for High Pressure Science and Technology Advanced Research(HPSTAR) Beijing 100094China

As a simple binary compound, p-type SnS shows great competitiveness in thermoelectrics due to the certain appealing carrier and phonon transport behaviors, coupled with its cost-effectiveness, earth-abundance and environmental compatibility. To promote the application of low-cost thermoelectric devices, we synthesized n-type SnS crystals through bromine doping. Herein, we report a high in-plane power factor of ~28 μW cm^(-1)K^(-2), and attribute it to an outstanding in-plane carrier mobility in the crystal form and the large Seebeck coefficient benefitting from the low carrier concentration. The calculations of elastic properties show that the low lattice thermal conductivity in SnS is closely related to its strong anharmonicity. Combining the excellent electrical transport properties with low thermal conductivity, a final ZT of ~0.4 is attained at 300 K, projecting a conversion efficiency of ~5% at 873 K along the in-plane direction.

关键词： tin sulfide n-type layered structure carrier concentration thermoelectric transports

Solid-state synthesis and ion transport characteristics of the β-KSbF_(4) for all-solid-state fluoride-ion batteries

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Journal of Energy Chemistry 2024年第7期94卷 758-767页

作者： Jiali Liu Huahui Zhao Jingcheng Xia Lingguang Yi Xiaoyi Chen Dongdu Li Shuhan Ni Xinyi Su Yixuan Chen Min Liu Xianyou Wang National Base for International Science&Technology Cooperation National Local Joint Engineering Laboratory for Key Materials of New Energy Storage BatteryHunan Province Key Laboratory of Electrochemical Energy Storage&ConversionSchool of ChemistryXiangtan UniversityXiangtan 411105HunanChina College of New Energy Ningbo University of TechnologyNingbo 315336ZhejiangChina

All-solid-state fluoride ion batteries(FIBs)have been recently considered as a post-lithium-ion battery system due to their high safety and high energy *** like all solid-state lithium batteries,the key to the development of FIBs lies in room-temperature electrolytes with high ionic conductivity.β-KSbF_(4) is a kind of promising solid-state electrolyte for FIBs owing to its rational ionic conductivity and relatively wide electrochemical stability window at room ***,the previous synthesis routes ofβ-KSbF_(4) required the use of highly toxic hydrofluoric acid and the ionic conductivity of as-prepared product needs to be further ***,the β-KSbF_(4) sample with an ionic conductivity of 1.04×10^(-4)s cm^(-1)(30°C)is synthesized through the simple solid-state *** order to account for the high ionic conductivity of the as-synthesizedβ-KSbF_(4),X-ray diffraction(XRD),scanning electron microscopy(SEM),and energy dispersive X-ray spectroscopy(EDS)are used to characterize the physic-ochemical *** results show that the as-synthesizedβ-KSbF_(4) exhibits higher carrier concentra-tion of 1.0×10^(-6)S cm-Hz^(-1)K and hopping frequency of 1.31×10^(6)Hz at 30°C due to the formation of the fluorine ***,the hopping frequency shows the same trend as the changes of ionic conductivity with the changes of temperature,while the carrier concentration is found to be almost *** two different trends indicate the hopping frequency is mainly responsible for the ionic conduc-tion behavior withinβ-KSbF_(4).Furthermore,the all-solid-state FIBs,in which Ag and Pb+PbF_(2) are adopted as cathode and anode,andβ-KSbF_(4) as fluoride ion conductor,are capable of reversible charge and *** assembled FIBs show a discharge capacity of 108.4 mA h g^(-1) at 1st cycle and 74.2 mA h g^(-1) at 50th *** on an examination of the capacity decay mechanism,it has been found that deterioration of the electrolyte/electrode int

关键词： Solid-state electrolyte carrier concentration Hopping frequency β-KSbF_(4) All-solid-state fluoride ion batteries

Strategies to advance thermoelectric performance of PbSe and PbS materials

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Rare Metals 2024年第9期43卷 4099-4114页

作者： Zheng-Hao Hou Xin Qian Qiu-Juan Cui Shu-Fang Wang Li-Dong Zhao Shijiazhuang Key Laboratory of Low Carbon Energy Materials College of Chemical EngineeringShijiazhuang University Hebei Key Lab of Optic-Electronic Information and Materials College of Physics Science and Technology Hebei University School of Materials Science and Engineering Beihang University

Thermoelectric materials possess the unique capability to convert thermal energy into electric energy and vice versa, making them promising for waste heat recovery and efficient cooling systems. Currently, extensively investigated thermoelectric materials such as Bi2Te3,PbTe and GeTe exhibit superior thermoelectric properties at room temperature and medium temperature ***, the broad application of these thermoelectric materials has been impeded by the high cost and restricted accessibility of Te and Ge in the earth's crust. Over the past few years, researchers have shown increasing interest in PbSe-and PbS-based materials, primarily attributed to their abundant elemental supply and relatively low costs. The assessment of research progress and a comprehensive overview of optimization strategies in time can significantly contribute to further improving the thermoelectric performance. These strategies include optimizing carrier concentration(aliovalent doping, dynamic doping and defect state), enhancing density-of-state effective mass(band convergence, band flattening and energy filtering effect), optimizing carrier mobility(band sharpening and band alignment) and reducing lattice thermal conductivity(all-scale hierarchical defect structures designing). This systematic summary and analysis provide novel insights and perspectives for the development of thermoelectric materials.

关键词： carrier concentration

Copper telluride with manipulated carrier concentrations for high-performance solid-state thermoelectrics

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Journal of Materials Science & Technology 2022年第34期129卷 190-195页

作者： Hyun Ju Dabin Park Minsu Kim Jooheon Kim G.W.Woodruff School of Mechanical Engineering Georgia Institute of TechnologyAtlantaGA 30332USA School of Chemical Engineering&Materials Science Chung-Ang UniversitySeoul 06974Republic of Korea Department of Intelligent Energy and Industry Graduate SchoolChung-Ang UniversitySeoul 06974Republic of Korea Department of Advance Materials Engineering Chung-Ang UniversityAnseong 17546Republic of Korea

This study proposed a strategy for effectively diminishing the carrier concentration in Cu_(2)Te by introducing graphene sheets,Based on thermoelectric property measurements and single parabolic band modeling,the incorporated graphene effectively reduced the carrier concentration,not only enhancing the thermoelectric performance of the Cu_(2)Te/graphene composite but also substantially improving its figure of merit up to ~1.47 at 1000 K,which is 268% higher than that of pristine Cu_(2)Te,This study gives an insight into the control of carrier concentration and thermoelectric properties in Cu_(2)Te,and it could be extended to other copper chalcogenides for excellent thermoelectrics.

关键词： Thermoelectric Copper telluride Graphene carrier concentration Single parabolic band model

Condensed point defects enhance thermoelectric performance of rare-earth Lu-doped GeTe

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Journal of Materials Science & Technology 2023年第20期151卷 227-233页

作者： Wan-Yu Lyu Wei-Di Liu Meng Li Xiao-Lei Shi Min Hong Tianyi Cao Kai Guo Jun Luo Jin Zou Zhi-Gang Chen Centre for Future Materials University of Southern QueenslandSpringfieldQueensland 4300Australia School of Chemistry and Physics Queensland University of TechnologyBrisbaneQueensland 4000Australia Australian Institute for Bioengineering and Nanotechnology The University of QueenslandBrisbaneQueensland 4072Australia School of Physics and Materials Science Guangzhou UniversityGuangzhou 510006China School of Materials Science and Engineering Shanghai UniversityShanghai 200444China School of Mechanical and Mining Engineering The University of QueenslandBrisbaneQueensland 4072Australia Centre for Microscopy and Microanalysis The University of QueenslandBrisbaneQueensland 4072Australia

Heavy rare-earth element doping can effectively strengthen phonon scattering,suppress the lattice thermal conductivity,and enhance the overall thermoelectric performance of ***,the large electronegativity difference between rare-earth elements(such as La,Eu,and Gd)and Ge refrains the doping limit of rare-earth elements below 1 mol.%in ***,compared with other rare earth elements,Lu was found to have a relatively small radius and electronegativity difference with Ge,which can induce a high doping level in *** result shows that Lu doping effectively reduces the lattice thermal conductivity from 0.77 W^(−1) m K^(−1) of GeTe to 0.35 W m^(−1) K^(−1) of Ge_(0.98)Lu_(0.02)Te at 673 K,and further induces a high zT value of 1.5 in Ge_(0.98)Lu_(0.02)Te at 673 *** Sb alloying optimizes the carrier concentration from 1.02×10^(21) cm^(−3) of Ge_(0.98)Lu_(0.02)Te to 1.77×10^(20) cm^(−3) of Ge0.90Lu0.02Sb0.08Te,which results in a reasonable power factor of 33.82μW cm^(−1) K^(−2) and a low electrical thermal conductivity of 0.75 W m^(−1) K^(−1) at 673 K in Ge_(0.90)Lu_(0.02)Sb_(0.08)***,a peak zT of 1.75 at 673 K and an average zT of 0.92 within the temperature range of 303–723 K are obtained in Ge_(0.9)Lu_(0.02)Sb_(0.08)*** study indicates that Lu and Sb co-doping can effectively boost the thermoelectric performance of GeTe-based thermoelectric materials.

关键词： Thermoelectric Rare-earth Thermal conductivity carrier concentration

Enhanced thermoelectric performance in p-type Mg3Sb2 via lithium doping

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Chinese Physics B 2018年第4期27卷 110-116页

作者： Hao Wang Jin Chen Tianqi Lu Kunjie Zhu Shan Li Jun Liu Huaizhou Zhao School of Materials Science and Engineering Central South University Changsha 410083 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly ***,the intrinsically p-type Mg3Sb2 shows low figure of merit（z T = 0.23 at 723 K） for its poor electrical *** this study,a series of Mg（3-x）LixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering（SPS） *** transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = ***,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,*** our best knowledge,those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping.

关键词： p-type Mg3Sb2 Zintl compounds lithium doping carrier concentration enhanced thermoelectric properties

Defect engineering synergistically modulates power factor and thermal conductivity of CuGaTe2 for ultra-high thermoelectric performance

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Journal of Materials Science & Technology 2022年第33期128卷 213-220页

作者： Zipei Zhang Wenhao Li Lu Yu Sitong Wei Shikai Wei Zhen Ji Weiyu Song Shuqi Zheng State Key Laboratory of Heavy Oil Processing College of New Energy and MaterialsChina University of PetroleumBeijing 102249China College of Science China University of PetroleumBeijing 102249China

The ternary chalcopyrite CuGaTe_(2)has emerged as a promising p-type thermoelectric material with its advantages of low cost,good stability,and non-toxic ***,its thermoelectric performance is limited by the intrinsic low electrical conductivity and high lattice thermal *** this work,A deficiency of Cu in Cu_(1–x)Ga Te_(2)semiconductors can be used to optimize the electrical properties by improving the carrier concentration and to reduce thermal conductivity through multi-scale phonon scattering,which is predicted and guided by the First-principles density functional theory *** carrier concentration is increased to 1020,which compensates for the low electrical performance caused by the intrinsic low nHof CuGaTe_(2).The average power factor of Cu_(0.96)Ga Te_(2)reaches 106.3%higher than that of the original CuGaTe_(2).In addition,the lattice thermal conductivity of the defective samples is greatly reduced at high temperatures,which is mainly due to the reduction of sound speed and phonon *** the above factors contribute to the highest dimensionless figure of merit(ZT)value of 1.23 at 823 K in Cu_(0.96)GaTe_(2),which is 114%higher than the pristine CuGaTe_(2),and the average ZT is 171.4%higher.

关键词： Thermoelectric CuGaTe_(2) carrier concentration Thermal conductivity