Condensed point defects enhance thermoelectric performance of rare-earth Lu-doped GeTe
作者机构：Centre for Future MaterialsUniversity of Southern QueenslandSpringfieldQueensland 4300Australia School of Chemistry and PhysicsQueensland University of TechnologyBrisbaneQueensland 4000Australia Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland 4072Australia School of Physics and Materials ScienceGuangzhou UniversityGuangzhou 510006China School of Materials Science and EngineeringShanghai UniversityShanghai 200444China School of Mechanical and Mining EngineeringThe University of QueenslandBrisbaneQueensland 4072Australia Centre for Microscopy and MicroanalysisThe University of QueenslandBrisbaneQueensland 4072Australia
出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)
年 卷 期：2023年第151卷第20期
页 面：227-233页
核心收录：
学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）]
基 金：supported by the Australian Research Council the Innovation centre for Sustainable Steel project and the QUT capacity building professor program.K.Guo thanks the support of the National Key Research and Development Program of China(No.2018YFA0702100)
主 题：Thermoelectric Rare-earth Thermal conductivity Carrier concentration
摘 要：Heavy rare-earth element doping can effectively strengthen phonon scattering,suppress the lattice thermal conductivity,and enhance the overall thermoelectric performance of ***,the large electronegativity difference between rare-earth elements(such as La,Eu,and Gd)and Ge refrains the doping limit of rare-earth elements below 1 mol.%in ***,compared with other rare earth elements,Lu was found to have a relatively small radius and electronegativity difference with Ge,which can induce a high doping level in *** result shows that Lu doping effectively reduces the lattice thermal conductivity from 0.77 W^(−1) m K^(−1) of GeTe to 0.35 W m^(−1) K^(−1) of Ge_(0.98)Lu_(0.02)Te at 673 K,and further induces a high zT value of 1.5 in Ge_(0.98)Lu_(0.02)Te at 673 *** Sb alloying optimizes the carrier concentration from 1.02×10^(21) cm^(−3) of Ge_(0.98)Lu_(0.02)Te to 1.77×10^(20) cm^(−3) of Ge0.90Lu0.02Sb0.08Te,which results in a reasonable power factor of 33.82μW cm^(−1) K^(−2) and a low electrical thermal conductivity of 0.75 W m^(−1) K^(−1) at 673 K in Ge_(0.90)Lu_(0.02)Sb_(0.08)***,a peak zT of 1.75 at 673 K and an average zT of 0.92 within the temperature range of 303–723 K are obtained in Ge_(0.9)Lu_(0.02)Sb_(0.08)*** study indicates that Lu and Sb co-doping can effectively boost the thermoelectric performance of GeTe-based thermoelectric materials.
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