Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor

作     者：Yihui Sun Xiaoqin Yan Xin Zheng Yichong Liu Yanwei Shen Yue Zhang 

作者机构：State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Beijing Municipal Key Laboratory of New Energy Materials and Technologies University of Science and Technology Beijing Beijing 100083 China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2016年第9卷第4期

页      面：1116-1124页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：This work was supported by the National Basic Research Program of China （No. 2013CB932602）  the Program of Introducing Talents of Discipline to Universities （No. B14003）  National Natural Science Foundation of China （Nos. 51527802  51372023 and 51232001）  Beijing Municipal Science ＆ Technology Commission  the Fundamental Research Funds for Central Universities. 

主　　题：resistive switch,carrier concentration,driving force,potential gradient,concentration gradient 

摘      要：Sandwich-style memristor devices were synthesized by electrochemical deposition with a ZnO film serving as the active layer between Al-doped ZnO （AZO） and Au electrodes. The carrier concentration of the ZnO films is controlled by adding HNO3 during the growth process. A resulting increase in carrier concentration from 10^17 to 10^19 cm^-3 was observed, along with a corresponding drop in the on--off ratio from 6,437% to 100%. The resistive switching characteristics completely disappeared when the carrier concentration was above 1029 cm-3, making it unsuitable for a memory device. The decreasing switching ratio is attributed to a reduction in the driving force for oxygen vacancy drift. Systematic analysis of the migration of oxygen vacancies is presented, including the concentration gradient and electrical potential gradient. Such oxygen vacancy migration dynamics provide insight into the mechanisms of the oxygen vacancy drift and provide valuable information for industrial production of memristor devices.