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An Image Localization System Based on single photon

Computers, Materials & Continua 2022年第12期73卷 6139-6149页

作者： Yanyi Wu Xiaoyu Li Qinsheng Zhu Xiaolei Liu Hao Wu Shan Yang School of Physics University of Electronic Science and Technology of ChinaChengdu610054China School of Information and Software Engineering University of Electronic Science and Technology of ChinaChengdu610054China Department of Chemistry Physics and Atmospheric SciencesJackson State UniversityJacksonUSA

As an essential part of artificial intelligence,many works focus on image processing which is the branch of computer vision.Nevertheless,image localization faces complex challenges in image processing with image data increases.At the same time,quantum computing has the unique advantages of improving computing power and reducing energy consumption.So,combining the advantage of quantum computing is necessary for studying the quantum image localization algorithms.At present,many quantum image localization algorithms have been proposed,and their efficiency is theoretically higher than the corresponding classical algorithms.But,in quantum computing experiments,quantum gates in quantum computing hardware need to work at very low temperatures,which brings great challenges to experiments.This paper proposes a single-photon-based quantum image localization algorithm based on the fundamental theory of single-photon image classification.This scheme realizes the operation of the mixed national institute of standards and technology database(MNIST)quantum image localization by a learned transformation for non-noise condition,noisy condition,and environmental attack condition,respectively.Compared with the regular use of entanglement between multi-qubits and low-temperature noise reduction conditions for image localization,the advantage of this method is that it does not deliberately require low temperature and entanglement resources,and it improves the lower bound of the localization success rate.This method paves a way to study quantum computer vision.

关键词： MNIST data single-photon quantum computing image localization

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Noiseless linear amplification for the single-photon entanglement of arbitrary polarization–time-bin qudit

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Chinese Physics B 2019年第1期28卷 210-217页

作者：陈灵泉盛宇波周澜 School of Science Nanjing University of Posts and TelecommunicationsNanjing 210003China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210003China Key Laboratory of Broadband Wireless Communication and Sensor Network Technology(Ministry of Education) Nanjing University of Posts and TelecommunicationsNanjing 210003China Institute of Signal Processing Transmission Nanjing University of Posts and TelecommunicationsNanjing 210003China

single-photon entanglement(SPE) is an important source in quantum communication. In this paper, we put forward a single-photon-assisted noiseless linear amplification protocol to protect the SPE of an arbitrary polarization–time-bin qudit from the photon transmission loss caused by the practical channel noise. After the amplification, the fidelity of the SPE can be effectively increased. Meanwhile, the encoded polarization–time-bin features of the qudit can be well preserved. The protocol can be realized under the current experimental conditions. Moreover, the amplification protocol can be extended to resist complete photon loss and partial photon loss during the photon transmission. After the amplification, we can not only increase the fidelity of the target state, but also solve the decoherence problem simultaneously. Based on the above features, our amplification protocol may be useful in future quantum communication.

关键词： single-photon entanglement noiseless linear amplification polarization–time-bin qudit complete and partial photon loss

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Dark count in single-photon avalanche diodes:A novel statistical behavioral model

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Chinese Physics B 2020年第4期29卷 523-529页

作者：喻文娟张钰许明珠逯鑫淼 School of Electronics and Information Hangzhou Dianzi UniversityHangzhou 310018China

Dark count is one of the inherent noise types in single-photon diodes,which may restrict the performances of detectors based on these diodes.To formulate better designs for peripheral circuits of such diodes,an accurate statistical behavioral model of dark current must be established.Research has shown that there are four main mechanisms that contribute to the dark count in single-photon avalanche diodes.However,in the existing dark count models only three models have been considered,thus leading to inaccuracies in these models.To resolve these shortcomings,the dark current caused by carrier diffusion in the neutral region is deduced by multiplying the carrier detection probability with the carrier particle current at the boundary of the depletion layer.Thus,a comprehensive dark current model is constructed by adding the dark current caused by carrier diffusion to the dark current caused by the other three mechanisms.To the best of our knowledge,this is the first dark count simulation model into which incorporated simultaneously are the thermal generation,trap-assisted tunneling,band-to-band tunneling mechanisms,and carrier diffusion in neutral regions to evaluate dark count behavior.The comparison between the measured data and the simulation results from the models shows that the proposed model is more accurate than other existing models,and the maximum of accuracy increases up to 31.48%when excess bias voltage equals 3.5 V and temperature is 50℃.

关键词： single-photon avalanche diode dark count statistical behavioral modeling carrier diffusion

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Micropillar Cavity Design for 1.55-μm Quantum-Dot single-photon Sources

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Journal of Electronic Science and Technology 2019年第3期17卷 221-230页

作者： Hai-Zhi Song Wei Zhang Li-Bo Yu Zhiming M.Wang the Institute of Fundamental and Frontier Sciences University of Electronic Science and TechnologyChengdu 610054 Southwest Institute of Technical Physics Chengdu 610041

The 1.55-μm quantum-dot (QD) micropillar cavities are strongly required as single photon sources (SPSs) for silica-fiber-based quantum information processing. Theoretical analysis shows that the adiabatic distributed Bragg reflector (DBR) structure may greatly improve the quality of a micropillar cavity. An InGaAsP/InP micropillar cavity is originally difficult, but it becomes more likely usable with inserted tapered (thickness decreased towards the center) distributed DBRs. Simulation turns out that, incorporating adiabatically tapered DBRs, a Si/SiO2- InP hybrid micropillar cavity, which enables weakly coupling InAs/InP quantum dots (QDs), can even well satisfy strong coupling at a smaller diameter. Certainly, not only the tapered structure, other adiabatic designs, e.g., both DBR layers getting thicker and one thicker one thinner, also improve the quality, reduce the diameter, and degrade the fabrication difficulty of Si/SiO2-InP hybrid micropillar cavities. Furthermore, the problem of the thin epitaxial semiconductor layer can also be greatly resolved by inserting adiabatic InGaAsP/InP DBRs. With tapered DBRs, the InGaAsP/InP-air-aperture micro-pillar cavity serves as an efficient, coherent, and monolithically producible 1.55-μm single-photon source (SPS). The adiabatic design is thus an effective way to obtain prospective candidates for 1.55-μm QD SPSs.

关键词： Cavity distributed Bragg reflectors(DBRs) micropillar quantum dot(QD) single-photon source(SPS)

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Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies

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Chinese Physics B 2019年第6期28卷 458-464页

作者： Taha Haddadifam Mohammad Azim Karami Iran University of Science and Technology

This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added between p^+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p^+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.

关键词： single-photon avalanche diode digital silicon photomultiplier dark count rate

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Low-noise InGaAs/InP single-photon detector with widely tunable repetition rates

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photonics Research 2019年第3期7卷 I0001-I0006页

作者： YAN LIANG QILAI FEI ZHIHE LIU KUN HUANG HEPING ZENG Shanghai Key Laboratory of Modern Optical Systems Engineering Research Center of Optical Instruments and Systems Ministry of EducationSchool of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology State Key Laboratory of Precision Spectroscopy East China Normal University

InGaAs/InP avalanche photodiodes typically work in the gated Geiger mode to achieve near-infrared singlephoton detection. By using ultrashort gates and combining with the robust spike-canceling technique that consists of the capacitance-balancing and low-pass filtering technique, we demonstrate an InGaAs/InP single-photon detector(SPD) with widely tunable repetition rates in this paper. The operation frequency could be tuned conveniently from 100 MHz to 1.25 GHz with the SPD's performance measured to maintain good performance, making it quite suitable for quantum key distribution, laser ranging, and optical time domain reflectometry. Furthermore,the SPD exhibited extremely low-noise characteristics. The detection efficiency of this SPD could reach 20% with the dark count rate of 2.5 × 10^(-6)∕gate and after-pulse probability of 4.1% at 1 GHz.

关键词： InGaAs/InP single-photon detector achieve near-infrared singlephoton detection robust spike-canceling technique

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Wavelength dependence of intrinsic detection efficiency of NbN superconducting nanowire single-photon detector

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Chinese Physics B 2019年第7期28卷 534-537页

作者：王勇李浩尤立星吕超林王河清张兴雨张伟君周慧张露杨晓燕王镇 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology(SIMIT) Chinese Academy of Sciences Shanghai 200050 China University of Chinese Academy of Sciences Beijing 100049 China CAS Center for Excellence in Superconducting Electronics(CENSE) Shanghai 200050 China

Superconducting nanowire single-photon detectors(SNSPDs) have attracted considerable attention owing to their excellent detection performance;however, the underlying physics of the detection process is still unclear.In this study, we investigate the wavelength dependence of the intrinsic detection efficiency(IDE) for NbN SNSPDs.We fabricate various NbN SNSPDs with linewidths ranging from 30 nm to 140 nm.Then, for each detector, the IDE curves as a function of bias current for different incident photon wavelengths of 510–1700 nm are obtained.From the IDE curves, the relations between photon energy and bias current at a certain IDE are extracted.The results exhibit clear nonlinear energy–current relations for the NbN detectors, indicating that a detection model only considering quasiparticle diffusion is unsuitable for the meander-type NbN-based SNSPDs.Our work provides additional experimental data on SNSPD detection mechanism and may serve as an interesting reference for further investigation.

关键词： niobium nitride superconducting nanowire single-photon detectors detection mechanism

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single-photon emitters in van der Waals materials

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Chinese Optics Letters 2019年第2期17卷 51-59页

作者：乔建东梅伏洪叶堉 Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education Taiyuan University of Technology State Key Laboratory for Artificial Microstructure & Mesoscopic Physics School of Physics Peking University Collaborative Innovation Center of Quantum Matter

Solid-state sources of single-photon emitters are highly desired for scalable quantum photonic applications, such as quantum communication, optical quantum information processing, and metrology. In the past year, great strides have been made in the characterization of single defects in wide-bandgap materials, such as silicon carbide and diamond, as well as single molecules, quantum dots, and carbon nanotubes. More recently, single-photon emitters in layered van der Waals materials attracted tremendous attention, because the two-dimensional(2 D)lattice allows for high photon extraction efficiency and easy integration into photonic circuits. In this review, we discuss recent advances in mastering single-photon emitters in 2 D materials, electrical generation pathways,detuning, and resonator coupling towards use as quantum light sources. Finally, we discuss the remaining challenges and the outlooks for layered material-based quantum photonic sources.

关键词： single-photon emitters materials

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A PSpice Circuit Model for single-photon Avalanche Diodes

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Optics and photonics Journal 2017年第8期7卷 1-6页

作者： Yuchong Tian Junjie Tu Yanli Zhao Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan China

In this paper, we present an improved circuit model for single-photon avalanche diodes without any convergence problems. The device simulation is based on Orcad PSpice and all the employed components are available in the standard library of the software. In particular, an intuitionistic and simple voltage-controlled current source is adopted to characterize the static behavior, which can better represent the voltage-current relationship than traditional model and reduce computational complexity of simulation. The derived can implement the self-sustaining, self-quenching and the recovery processes of the SPAD. And the simulation shows a reasonable result that the model can well emulate the avalanche process of SPAD.

关键词： single-photon Avalanche Diodes Circuit Model Orcad PSpice

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Microstructural damage pattern of vascular cognitive impairment: a comparison between moyamoya disease and cerebrovascular atherosclerotic disease

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Neural Regeneration Research 2019年第5期14卷 858-867页

作者： Jia-Bin Su Si-Da Xi Shu-Yi Zhou Xin Zhang Shen-Hong Jiang Bin Xu Liang Chen Yu Lei Chao Gao Yu-Xiang Gu Department of Neurosurgery Huashan Hospital Fudan University Shanghai Medical College Fudan University Department of Radiology Huashan Hospital Fudan University

Moyamoya disease and cerebrovascular atherosclerotic disease are both chronic ischemic diseases with similar presentations of vascular cognitive impairment. The aim of the present study was to investigate the patterns of microstructural damage associated with vascular cognitive impairment in the two diseases. The study recruited 34 patients with moyamoya disease(age 43.9 ± 9.2 years; 20 men and 14 women, 27 patients with cerebrovascular atherosclerotic disease(age: 44.6 ± 7.6 years; 17 men and 10 women), and 31 normal controls(age 43.6 ± 7.3 years; 18 men and 13 women) from Huashan Hospital of Fudan University in China. Cognitive function was assessed using the Mini-Mental State Examination, long-term delayed recall of Auditory Verbal Learning Test, Trail Making Test Part B, and the Symbol Digit Modalities Test. single-photon emission-computed tomography was used to examine cerebral perfusion. Voxel-based morphometry and tract-based spatial statistics were performed to identify regions of gray matter atrophy and white matter deterioration in patients and normal controls. The results demonstrated that the severity of cognitive impairment was similar between the two diseases in all tested domains. Patients with moyamoya disease and those with cerebrovascular atherosclerotic disease suffered from disturbed supratentorial hemodynamics. Gray matter atrophy in bilateral middle cingulate cortex and parts of the frontal gyrus was prominent in both diseases, but in general, was more severe and more diffuse in those with moyamoya disease. White matter deterioration was significant for both diseases in the genu and body of corpus callosum, in the anterior and superior corona radiation, and in the posterior thalamic radiation, but in moyamoya disease, it was more diffuse and more severe. Vascular cognitive impairment was associated with regional microstructural damage, with a potential link between, gray and white matter damage. Overall, these results provide insight into the pathophysiological nature of vascular cognitive i

关键词： nerve regeneration vascular cognitive impairment moyamoya disease cerebrovascular atherosclerotic disease magnetic resonance imaging diffusion tensor imaging gray matter volume tract-based spatial statistics single-photon emission computed tomography neural regeneration

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