Micropillar Cavity Design for 1.55-μm Quantum-Dot Single-Photon Sources
Micropillar Cavity Design for 1.55-μm Quantum-Dot Single-Photon Sources作者机构:the Institute of Fundamental and Frontier SciencesUniversity of Electronic Science and TechnologyChengdu 610054 Southwest Institute of Technical PhysicsChengdu 610041
出 版 物:《Journal of Electronic Science and Technology》 (电子科技学刊(英文版))
年 卷 期:2019年第17卷第3期
页 面:221-230页
核心收录:
学科分类:070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学]
基 金:supported by the Sichuan Science and Technology Program under Grant No.2018JY0084
主 题:Cavity distributed Bragg reflectors(DBRs) micropillar quantum dot(QD) single-photon source(SPS)
摘 要:The 1.55-μm quantum-dot (QD) micropillar cavities are strongly required as single photon sources (SPSs) for silica-fiber-based quantum information processing. Theoretical analysis shows that the adiabatic distributed Bragg reflector (DBR) structure may greatly improve the quality of a micropillar cavity. An InGaAsP/InP micropillar cavity is originally difficult, but it becomes more likely usable with inserted tapered (thickness decreased towards the center) distributed DBRs. Simulation turns out that, incorporating adiabatically tapered DBRs, a Si/SiO2- InP hybrid micropillar cavity, which enables weakly coupling InAs/InP quantum dots (QDs), can even well satisfy strong coupling at a smaller diameter. Certainly, not only the tapered structure, other adiabatic designs, e.g., both DBR layers getting thicker and one thicker one thinner, also improve the quality, reduce the diameter, and degrade the fabrication difficulty of Si/SiO2-InP hybrid micropillar cavities. Furthermore, the problem of the thin epitaxial semiconductor layer can also be greatly resolved by inserting adiabatic InGaAsP/InP DBRs. With tapered DBRs, the InGaAsP/InP-air-aperture micro-pillar cavity serves as an efficient, coherent, and monolithically producible 1.55-μm single-photon source (SPS). The adiabatic design is thus an effective way to obtain prospective candidates for 1.55-μm QD SPSs.