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Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT

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Rare Metals 2003年第1期22卷 69-74页

作者： MENGXiangti WANGRuipian KANGAiguo WANGJilin JIAHongyong CHENPe InstituteofMicroelectronics TsinghuaUniversityBeijing100084China InstituteofNuclearEnergytechnology TsinghuaUniversityBeijing100084China

The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alter neutron irradiation, the collector currentI_c and the current gain beta decrease, and the base current I_b increases generally for SiGe *** higher the neutron irradiation fluence is, the larger I_b increases. For conventional Si BJT,I_c and I_b increase as well as beta decreases much larger than SiGe HBT at the same fluence. It isshown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance thanSi BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.

关键词： semiconductor technology SiGe HBT neutron irradiation Si BJT electrical performance

Analysis of the abnormal resistance in AlGaN/GaN heterostructure's ohmic contact tests

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Rare Metals 2007年第5期26卷 463-469页

作者： XU Chuan WANG Jinyan JIN Haiyan ZHOU Jin WEN Cheng P Institute of Microelectronics Peking University Beijing 100871 China

Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the contact resistance testing,the surface morphology and contact borders of the samples were analyzed to determine the physical mechanism. Such abnormal phenomenon is found to originate from cracking of the AlGaN layer during RTP,flowing of Ti/Al metallic liquid along the crevices,and continuous reaction of the metallic liquid with AlGaN/GaN. Such processes result in abnormal conduction channels. The possible mechanism of the crevice formation was discussed,and the possible solutions to avoid the crevices were proposed.

关键词： semiconductor technology abnormal resistance EDX AlGaN/GaN ohmic contact crevices

Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors

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Rare Metals 2004年第2期23卷 165-170页

作者： MENGXiangti KANGAiguo ZHANGXimin LIJihong HUANGQiang LIFengmei LIUXiaoguang ZHOUHongyu InstituteofNuclearEnergytechnology TsinghuaUniversityBeijing100084China InstituteofLowEnergyNuclearPhysics BeijingNormalUniversityBeijing100875China

Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.

关键词： semiconductor technology irradiation damage electron and gamma irradiation color CMOS image sensor output characteristic Si

Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT

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Rare Metals 2004年第4期23卷 330-339页

作者： MENGXiangti ZHANGXimin WANGJilin HUANGWentiao CHENPeiyi KLAHongyong InstituteofNuclearandNewEnergytechnology TsinghuaUniversityBeijing100084China InstituteofMicroelectronics TsinghuaUniversityBeijing100084China

The DC characteristics of SiGe HBT irradiated at different electron dose havebeen studied in a comparison with those of Si B JT. Generally, I_b and I_b - I_(b0) increase, I_c,I_c -I_(c0) and its +/- transition V_(be) as well as DC current gain ft decreases with increasingdose; increase of I_b -I_(b0) with increasing dose for Si BIT is much larger than that for SiGe HBT;beta increases with V_(be) or I_b, but decreases at I_b < 0.25 mA with I_b, and congregates athigher dose; and a damage factor d(beta) is much less at the same dose for SiGe HBT than for Si *** HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena forincrease of I_c, I_c -I_(c0), I_b -I_(b0) and beta at low dose have been found. Some electron trapshave been measured. The mechanism of changes of characteristics is discussed.

关键词： semiconductor technology SiGe HBT electron irradiation Si BJT DCelectrical performance

Synthesis of GaN films on porous silicon substrates

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Rare Metals 2006年第1期25卷 96-98页

作者： DONG Zhihua XUE Chengshan ZHUANG Huizhao GAO Haiyong TIAN Deheng WU Yuxin Institute of semiconductors Shandong Normal University Jinan 250014 China

A novel and simple method was employed to synthesize GaN films on porous silicon （PS） substrates, GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction （XRD） to identify crystalline structure. Fourier transmit infrared （FFIR） spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy （SEM） and were found to consist of many big crystal grains. Photoluminescence （PL） spectrum was used to illuminate the optical property of the GaN films.

关键词： semiconductor technology GaN films magnetron sputtering porous silicon

A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

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Chinese Physics C 2008年第6期32卷 442-445页

作者：孟祥提黄强马艳秀郑永男范平朱升云 Institute of Nuclear and New Energy technology Tsinghua University China Institute of Atomic Energy

The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1× 10^9 to 4×10^10 cm^-2 and 1 × 10^9 to 2×10^12 cm^-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×10^l0 and 2×10^12 cm^-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

关键词： semiconductor technology CMOS image sensor proton irradiation average brightness TRIM simulation

Depletion Mode HEMT with Refractory Metal Silicide WSi Gate

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semiconductor Photonics and technology 1996年第1期2卷 54-56页

作者： CHEN Dingqin ZHOU Fan(Institute of semiconductors, Academia Sinica, Beijing 100083, CHN)

Depletion mode HEMT with refractory metal silicide WSi gate has been designed and fabricated. Epitaxial modulation doping materials were grown by a home-made MBE system. The gate length and width for low noise depletion devices were 1.2-1.5 μm and 2 × 160 μm respectively. The electron mobility of the fabricated devices is typically 6 080 cm2/V.s at 300K and 68 000 cm2/V.s at 77K. The sheet electron concentration ns is 9 × 10 11 cm-2. The source-drain contacts with AuGeNi/Au were fabricated using evaporating and lift-off technique. to further reduce the contact resistance, the wafer was alloyed at 520 ℃ for 3 min in the hydrogen (H2) gas. Schottky gate was formed using WSi. The transconductance of the depletion mode device is 110～130 mS/mm at room temperature. The devices can be applied in communication satellite at microwave frequency of 3. 83 GHz and radar receiver at 1. 5 GHz. Its noise figure is about 2～3 dB.

关键词： semiconductor Devices semiconductor technology MBE Material Transconductance Depletion Mode HEMT

Amorphous Silicon 16—bit Array Photodetector

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semiconductor Photonics and technology 1997年第1期3卷 20-23页

作者： ZHANGShaoqiang XUZhongyang 等 HuazhongUniversityofScienceandtechnology Wuhan430074CHN HuazhongUniversityofScienceandtechnology Wuh

Abstract: An amorphous silicon 16 - bit array photodetector with the a - SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id< 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.

关键词： Amorphous semiconductor Photodetector semiconductor technology