Depletion Mode HEMT with Refractory Metal Silicide WSi Gate

作     者：CHEN Dingqin ZHOU Fan(Institute of Semiconductors, Academia Sinica, Beijing 100083, CHN) 

出 版 物：《Semiconductor Photonics and Technology》 (半导体光子学与技术（英文版）)

年 卷 期：1996年第2卷第1期

页      面：54-56页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Semiconductor Devices Semiconductor Technology MBE Material Transconductance Depletion Mode HEMT 

摘      要：Depletion mode HEMT with refractory metal silicide WSi gate has been designed and fabricated. Epitaxial modulation doping materials were grown by a home-made MBE system. The gate length and width for low noise depletion devices were 1.2-1.5 μm and 2 × 160 μm respectively. The electron mobility of the fabricated devices is typically 6 080 cm2/V.s at 300K and 68 000 cm2/V.s at 77K. The sheet electron concentration ns is 9 × 10 11 cm-2. The source-drain contacts with AuGeNi/Au were fabricated using evaporating and lift-off technique. to further reduce the contact resistance, the wafer was alloyed at 520 ℃ for 3 min in the hydrogen (H2) gas. Schottky gate was formed using WSi. The transconductance of the depletion mode device is 110～130 mS/mm at room temperature. The devices can be applied in communication satellite at microwave frequency of 3. 83 GHz and radar receiver at 1. 5 GHz. Its noise figure is about 2～3 dB.