Amorphous Silicon 16—bit Array Photodetector

作     者：ZHANGShaoqiang XUZhongyang 等 

作者机构：HuazhongUniversityofScienceandTechnologyWuhan430074CHN HuazhongUniversityofScienceandTechnologyWuh 

出 版 物：《Semiconductor Photonics and Technology》 (半导体光子学与技术（英文版）)

年 卷 期：1997年第3卷第1期

页      面：20-23页

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：Amorphous Semiconductor Photodetector Semiconductor Technology 

摘      要：Abstract: An amorphous silicon 16 - bit array photodetector with the a - SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.