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Nano Research 2024年第3期17卷 1856-1863页

作者： Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum efficiency.However,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical applications.Herein,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)method.The In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) significantly.Upon laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.

关键词： transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure Photodetector ultrahigh responsivity

High-performance broadband Photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region

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Science China(Information Sciences) 2024年第3期67卷 263-270页

作者： Bin WANG Jian YUAN Mengqi CHE Mingxiu LIU Yuting ZOU Junru AN Fan TAN Yaru SHI Nan ZHANG Liujian QI Shaojuan LI State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences State Key Laboratory of Applied Optics Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences School of Physics and Electronic Information Huaibei Normal University

Broadband Photodetectors based on narrow bandgap 2D materials have garnered considerable interest for application in the field of optoelectronic devices. However, their large dark current hinders device performance. In this work, a PtSe2/MoS2heterojunction was fabricated for a broadband Photodetector operating within the range of visible to near-infrared. The device exhibited suppressed dark currents with a high rectification ratio of 104. The built-in electric field of the heterojunction promoted carrier separation effectively, and the device achieved excellent photoelectric performance with responsivities of 1.7 × 103,27.52, and 21 mA/W at 635, 785, and 1550 nm wavelengths, respectively. Moreover, the specific detectivities(D*) were 2.2 × 1013Jones(635 nm), 3.55 × 1011Jones(785 nm), and 2.72 × 108Jones(1550 nm). The device demonstrated a rise/fall time of 131/241 μs under 1550 nm laser illumination. Visible and near-infrared imaging detection was also demonstrated based on the heterojunction device at room temperature. This work sheds light on the remarkable potential of PtSe2/MoS2heterojunctions in the domain of high-performance broadband Photodetectors.

关键词： Photodetector PtSe 2 /MoS 2 heterojunction visible to near infrared high performance

BaTiO_(3)/p-GaN/Au self-driven UV Photodetector with bipolar photocurrent controlled by ferroelectric polarization

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Chinese Physics B 2024年第4期33卷 202-207页

作者：韩无双刘可为杨佳霖朱勇学程祯陈星李炳辉刘雷申德振 State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Ferroelectric materials are promising candidates for ultraviolet Photodetectors due to their ferroelectric effect.In this work,a BaTiO_(3)/p-GaN/Au hybrid heterojunction-Schottky self-driven ultraviolet Photodetector was fabricated with excellent bipolar photoresponse property.At 0 V bias,the direction of the photocurrent can be switched by flipping the depolarization field of BaTiO_(3),which allows the performance of Photodetectors to be controlled by the ferroelectric effect.Meanwhile,a relatively large responsivity and a fast response speed can be also observed.In particular,when the depolarization field of BaTiO_(3) is in the same direction of the built-in electric field of the Au/p-GaN Schottky junction(up polarized state),the Photodetector exhibits a high responsivity of 18 mA/W at 360 nm,and a fast response speed ofPhotodetectors with bipolar photocurrents.

关键词： ferroelectric effect bipolar self-driven Photodetector

Epitaxial growth of borophene on graphene surface towards efficient and broadband Photodetector

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Nano Research 2024年第4期17卷 3053-3060页

作者： Zenghui Wu Chen Shifan Zitong Wu Yi Liu Wei Shao Xinchao Liang Chuang Hou Guoan Tai The State Key Laboratory of Mechanics and Control of Mechanical Structures and Laboratory of Intelligent Nano Materials and Devices of Ministry of Education College of Aerospace EngineeringNanjing University of Aeronautics and AstronauticsNanjing 210016China

In-situ integration of multiple materials with well-defined interfaces as heterostructures is of great interest due to their unique properties and potential for new device functionality.Because of its polymorphism and diverse bonding geometries,borophene is a promising candidate for two-dimensional heterostructures,but suitable synthesis conditions have limited its potential applications.Toward this end,we demonstrate the vertical borophene and graphene heterostructures which form by epitaxial growth of borophene onto multilayer graphene on Cu substrates via chemical vapor deposition,where hydrogen and NaBH_(4) are respectively used as the carrier gas and the boron source.The lattice structure of the as-synthesized borophene well coincides with the predictedα′-boron sheet.The borophene-based Photodetector shows an excellent broadband photoresponse from the ultraviolet(255 nm)to the infrared(940 nm)wavelengths,with enhanced responsivity compared to pristine borophene or graphene Photodetectors.This work informs emerging efforts to integrate borophene into nanoelectronic applications for both fundamental investigations and technological applications.

关键词： borophene graphene heterostructure Photodetector two-dimensional materials

High-performance Si/VO_(2)-nanorod heterojunction Photodetector based on photothermoelectric effect for detecting human radiation

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Rare Metals 2024年第3期43卷 1177-1185页

作者： Fu-Hai Guo Lan-Zhong Hao Wei-Zhuo Yu Si-Qi Li Guan-Chu Liu Jing-Yi Hao Yun-Jie Liu College of Science China University of PetroleumQingdao266580China School of Materials Science and Engineering China University of PetroleumQingdao266580China

As a typical candidate of optoelectronic materials,vanadium dioxide(VO_(2))has wide applications in Photodetectors(PDs),but is still challenging in largely enhancing the photodetecting performance for low-power human radiation.Herein,high-performance Si/VO_(2)nanorods(NRs)heterojunction PDs based on the photothermoelectric(PTE)effect are presented.The uniform VO_(2)-NRs array films were deposited on Si by using magnetron sputtering technique,and a Si/VO_(2)heterojunctions were fabricated.The device exhibits a four-stage photoresponse and broadband photoresponse from ultraviolet to long-wavelength infrared.Benefited from the unique nanorods structure and the strong PTE effect,the fabricated device exhibits a large enhancement of the photodetecting performance,showing an ultrahigh photodetectivity of 1.6×10^(13)Jones and ultrafast response rates with a risingedge time of~65.0μs,three orders of magnitude higher than other VO_(2)-based devices.Furthermore,the device exhibits unique abilities to detect human radiation even when the human fingers are far away from the device surface up to 10.0 cm.Additionally,the fabricated Si/VO_(2)devices can also be applied as breath sensors to distinguish different breathing patterns.These results supply an effective route to design high-performance Photodetectors toward detecting human thermal radiation and respiration.

关键词： Vanadium dioxide Heterojunction Photodetector Photothermoelectric Human radiation and respiration sensing

Highly efficient 1D p-Te/2D n-Bi_(2)Te_(3) heterojunction self-driven broadband Photodetector

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Nano Research 2024年第3期17卷 1864-1874页

作者： Chenchen Zhao Dongbo Wang Jiamu Cao Zhi Zeng Bingke Zhang Jingwen Pan Donghao Liu Sihang Liu Shujie Jiao Tianyuan Chen Gang Liu Xuan Fang Liancheng Zhao Jinzhong Wang School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China School of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for High Pressure Science and Technology Advanced Research Shanghai 201203China State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022China

Broadband Photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain.However,high-performance broadband self-driven Photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction.Here,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)Photodetectors,with their high performance attributed to the good interfacial contacts reducing interface recombination.The device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as 377.45.The R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of photocurrent.It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband Photodetector.

关键词： topological insulating states interfacial recombination self-driven 1D p-Te/2D n-Bi_(2)Te_(3) Photodetector

High-response formamidine bromide lead hybrid cadmium sulfide Photodetector

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Chinese Optics Letters 2024年第2期22卷 159-166页

作者：刘耀刘磊张锐峰杨伟业刘应开 Institute of Physics and Electronic Information Yunnan Normal UniversityKunming 650500China Yunnan Key Laboratory of Optoelectronic Information Technology Kunming 650500China Key Laboratory of Advanced Technique&Preparation for Renewable Energy Materials Ministry of EducationYunnan Normal UniversityKunming 650500China

Organic-inorganic hybrid perovskite formamidinium lead bromide nanosheet(FAPb Br_(3)NS)is regarded as a superior substance used to construct optoelectronic devices.However,its uncontrollable stability seriously affects its application in the field of Photodetectors.In this paper,FAPb Br_(3)is combined with cadmium sulfide nanobelt(Cd S NB)to construct a hybrid device that greatly improves the stability and performance of the Photodetector.The response of the FAPb Br_(3)NS/Cd S NB detector under 490 nm light illumination reaches 5712 A/W,while the response of the FAPb Br_(3)Photodetector under equivalent conditions is only 25.45 A/W.The photocurrent of the FAPb Br_(3)NS/Cd S NB Photodetector is nearly 80.25%of the initial device after exposure to air for 60 days.The difference in electric field distribution between the single material device and the composite device is simulated by the finite-difference time-domain method.It shows the advantages of composite devices in photoconductive gain and directly promotes the hybrid device performance.This paper presents a new possibility for high stability,fast response Photodetectors.

关键词： organic-inorganic hybrid perovskite stability finite-difference time-domain Photodetector

Review of 2D Bi2X3（X=S,Se,Te）:from preparation to Photodetector

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Rare Metals 2024年第6期43卷 2349-2370页

作者： Zhi Zeng Dong-Bo Wang Xuan Fang Jia-Mu Cao Bing-Ke Zhang Jing-Wen Pan Dong-Hao Liu Si-Hang Liu Shu-Jie Jiao Tian-Yuan Chen Gang Liu Lian-Cheng Zhao Jin-Zhong Wang Department of Optoelectronic Information Science School of Materials Science and EngineeringHarbin Institute of Technology Changchun University Science and Technology School of PhysicsThe State Key Laboratory of High Power Semiconductor Lasers School of Astronautics Harbin Institute of Technology Center for High Pressure Science and Technology Advanced Research

Detector has become an indispensable part of human beings.The increasing demand for Photodetectors with high performance has promoted the research of novel materials.At the same time,with the development of rising material system,two-dimensional（2D） materials attract a lot of attention,while the suitable option for fabricating Photodetector is still limited.The prospering of bismuth chalcogenides injected new vitality for material field,thereinto,the unique topological insulator characteristics make the research on bismuth selenide（Bi2Se3） and bismuth telluride（Bi2Te3） intriguing.2D Bi2X3also exhibits unique features among various 2D materials,of which,the adjustable narrow energy band gap and polarization-sensitive photocurrent contribute to the promising application of high performance and broadband Photodetector.In this review,from a bottom-up perspective,we summarize fundamental properties,synthesis method,Photodetector performance of 2D Bi2X3based on the previous study,which provide an overall perspective of 2D Bi2X3.Wherein,the section of the Photodetector is specifically discu ssed with regard to pure Bi2X3Photodetector and heterojunction Photodetector.A brief summary and outlook were also explored in the end.

关键词： Bi 2 X 3 Preparation 2D Photodetector

High sensitivity of semimetal photodetection via Bose–Einstein condensation

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InfoMat 2024年第2期6卷 142-151页

作者： Tuntan Wu Qinxi Qiu Yongzhen Li Qiangguo Zhou Wanli Ma Jingbo Li Lin Jiang Wei Zhou Zhiming Huang State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhouthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China Institute of Optoelectronics Fudan UniversityShanghaithe People's Republic of China Key Laboratory of Space Active Optical-Electro Technology Chinese Academy of SciencesShanghaithe People's Republic of China

The discovery of semiconductor has witnessed remarkable strides toward high performance of Photodetectors attributed to its excellent carrier properties.However,semimetal,owning to the high carrier concentration and low carrier mobility compared to those of semiconductor,is generally considered unsuitable for photodetection.Herein,we demonstrate an outstanding photodetection in a layered semimetal titanium diselenide(TiSe_(2))in Bose-Einstein condensation(BEC)state.High sensitivity of semimetal Photodetector is realized in the range of visible,infrared and terahertz bands.The noise equivalent power(NEP)has threefold improvement at the visible and infrared wavebands,and significant decrease by one order of magnitude in the terahertz frequencies via BEC phenomenon,attributed to the electrical parameter variation after condensation.The best NEP value in the terahertz frequency is comparable to that of commercial Si Photodetector.Our results show another recipe to fabricate high performance of photodetection via semimetal except for semiconductor and pave the way to exploit macroscopic quantum phenomena for optoelectronics.

关键词： Bose-Einstein condensation electromagnetic induced well effect Photodetector semimetal

Room-temperature synthesis of full-component APbX_(3)perovskite nanocrystal inks for optoelectronic applications

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Journal of Energy Chemistry 2024年第5期92卷 87-94页

作者： Xinyu Zhao Du Li Xuliang Zhang Hehe Huang Chenyu Zhao Wanli Ma Jianyu Yuan Institute of Functional Nano&Soft Materials(FUNSOM) Soochow UniversitySuzhou 215123JiangsuChina Jiangsu Key Laboratory for Carbon-Based Functional Materials&Devices Soochow UniversitySuzhou 215123JiangsuChina Jiangsu Key Laboratory of Advanced Negative Carbon Technologies Soochow UniversitySuzhou 215123JiangsuChin

Lead halide perovskite nanocrystals(PNCs)have received great research interests due to their excellent optoelectronic properties.However,high temperature,inert gas protection and insulating long-chain ligands are used during the conventional hot-injection synthesis of PNCs,which limits their practical applications.In this work,we first develop a simple and scalable polar-solvent-free method for the preparation of full-component APbX_(3)(A=Cs,methylammonium(MA),formamidinium(FA),X=Cl,Br,I)PNCs under ambient condition.Through an exothermic reaction between butylamine(BA)and propionic acid(PA)short ligands,the PbX_(2) precursors could be well dissolved without use of any polar solvent.Meanwhile,the relatively lower growth rate of PNCs in our room-temperature reaction enables us to modulate the synthetic procedure to enhance the scalability(40-fold)and achieve large-scale synthesis.The resultant short ligands passivated PNC inks are compatible with varying solution depositing technique like spray coating for large-area film.Finally,we showcase that adopting the as-prepared MAPbI_(3) PNC inks,a self-powered Photodetector is fabricated and shows a high photoresponsivity.These results demonstrate that our ambient-condition synthetic approach can accelerate the preparation of tunable and ready-to-use PNCs towards commercial optoelectronic applications.

关键词： Room-temperaturesynthesis Perovskite nanocrystals Short-chainligands Large-scale Photodetector