Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector

作     者：Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan 

作者机构：Key Laboratory for Micro-Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2024年第17卷第3期

页      面：1856-1863页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：support from the following funding:the National Key R&D Program of China(No.2022YFA1204300) the National Natural Science Foundation of China(Nos.62104066,52221001,62090035,U19A2090,U22A20138 and 51902098) the Natural Science Foundation of Hunan Province(No.2021JJ20016) the Science and Technology Innovation Program of Hunan Province(Nos.2021RC3061 and 2020RC2028) the Key Program of Science and Technology Department of Hunan Province(Nos.2019XK2001 and 2020XK2001) the Open Project Program of Wuhan National Laboratory for Optoelectronics(No.2020WNLOKF016) the National Postdoctoral Program for Innovative Talents(No.BX2021094) the Postdoctoral Science Foundation of China(No.2020M680112) 

主　　题：transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure photodetector ultrahigh responsivity 

摘      要：Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum ***,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical ***,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)*** In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) *** laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.