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Nano Research 2024年第4期17卷 2960-2970页

作者： Yajie Han Shujie Jiao Jiangcheng Jing Lei Chen Ping Rong Shuai Ren Dongbo Wang Shiyong Gao Jinzhong Wang School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China

self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable class of detectors for future development.However,insensitive response to solar-blind ultraviolet(UV)and complex and expensive preparation processes greatly limit their performance and practical application.In this study,a self-powered full-spectrum Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented.Experiments results reveal that the developed PD has an excellent performance,such as high sensitivity from 200 to 850 nm,and a responsivity of 1.38 mA/W as well as a detectivity of 3.22×10^(10) Jones under 254 nm light at zero bias.Additionally,the unencapsulated device displays exceptional stability and imaging capabilities.It is expected that Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.

关键词： Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si self-powered photodetector full spectral photoresponse imaging

High-performance self-powered ultraviolet photodetector in SnO_(2)microwire/p-GaN heterojunction using graphene as charge collection medium

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Journal of Materials Science & Technology 2023年第7期138卷 183-192页

作者： Tong Xu Mingming Jiang Peng Wan Yang Liu Caixia Kan Daning Shi College of physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China

Graphene monolayer has been extensively applied as a transparency electrode material in photoelectronic devices due to its high transmittance,high carrier mobility,and ultrafast carrier dynamics.In this study,a high-performance self-powered photodetector,which is made of a SnO_(2)microwire,p-type GaN film,and monolayer graphene transparent electrode,was proposed and fabricated.The detector is sensitive to ultraviolet light signals and illustrates pronounced detection performances,including a peak respon-sivity∼223.7 mA W^(-1),a detectivity∼6.9×10^(12)Jones,fast response speed(rising/decaying times∼18/580μs),and excellent external quantum efficiency∼77%at 360 nm light illumination without exter-nal power supply.Compared with the pristine SnO_(2)/GaN photodetector using ITO electrode,the device performances of responsivity and detectivity are significantly increased over 6×10^(3)%and 3×10^(3)%,respectively.The performance-enhanced characteristics are mainly attributed to the high-quality het-erointerface of n-SnO_(2)/p-GaN,the highly conductive capacity,and the unique transparency of graphene electrodes.Particularly,the built-in potential formed at the SnO_(2)/GaN heterojunction interface could be strengthened by the Schottky potential barrier derived from the graphene electrode and SnO_(2)wire,en-hancing the carrier collection efficiency through graphene as a charge collection medium.This work is of great importance and significance to developing excellent-performance ultraviolet photodetectors for photovoltaic and optoelectronic applications in a self-powered operation manner.

关键词： self-powered photodetector SnO_(2)microwires Monolayer graphene electrode Heterojunction Schottky barrier

Enhanced-performance self-powered photodetector based on multi-layer MoS_(2) sandwiched between two asymmetric graphene contacts

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Science China(Technological Sciences) 2022年第11期65卷 2658-2666页

作者： GUO JunXiong LI ShangDong LIN Lin CAI Ji CHEN JianBo WANG ShiCai GOU Xin YE JingHua LUO ZhengHua HUANG Wen School of Electronic Information and Electrical Engineering Chengdu UniversityChengdu 610106China School of Electronics and Information Technology(School of Microelectronics) Sun Yat-sen UniversityGuangzhou 510006China School of Electronic Science and Engineering(National Exemplary School of Microelectronics).University of Electronic Science and Technologyof China Chengdu 610054China College of Materials Science and Engineering Sichuan UniversityChengdu 610064China Sichuan Time Frequency Synchronization System and Application Engineering Technology Research Center Chengdu 610062China

self-powered photodetectors can convert light into electrical signals without external power input and are widely used in applications such as imaging,sensing,communication,and security.The most popular approach for constructing a self-powered photodetector is typically based on the fabrication of an asymmetric metal-semiconductor(MS)contact;however,this technique is seriously limited by the Fermi-level pinning effect.Here,we report a room-temperature photodetector based on multi-layer MoS_(2) sandwiched between two separated asymmetric graphene contacts.Our photodetector was driven by the built-in electric field generated by a van der Waals(vd W)contact instead of the traditional MS contact.Operating under zero-bias voltage,the highest photoresponsivity of 0.63 AW^(-1) and a specific detectivity of 7.71×10^(12) Jones were achieved at a wavelength of 450 nm with 0.08μW cm^(-2) incident power intensity.Compared with devices using symmetric contacts,a high ON/OFF current ratio of approximately 1520 and a fast response time on the order of microseconds were also observed in our asymmetric graphene contact device.Our experimental results may open a novel way toward the realization of vd W contacts for the fabrication of selfpowered photodetectors.

关键词： MoS_(2) graphene self-powered photodetector asymmetric contact

PdSe_(2)/MoSe_(2) vertical heterojunction for self-powered photodetector with high performance

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Nano Research 2022年第3期15卷 2489-2496页

作者： Jiahong Zhong Biao Wu Yassine MADOUNE Yunpeng Wang Zongwen Liu Yanping Liu School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South UniversityChangsha 410083China State Key Laboratory of High-Performance Complex Manufacturing Central South UniversityChangsha 410083China School of Chemical and Biomolecular Engineering The University of SydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneyNSW 2006Australia Shenzhen Research Institute of Central South University A510aVirtual University BuildingSouthern DistrictHigh-tech Industrial ParkYuehai StreetNanshan DistrictShenzhen 518057China

Van der Waals’two-dimensional(2D)material heterostructure engineering offers an effective strategy for the design of multifunctional and high-performance optoelectronic devices.However,2D heterostructure photodetectors with a photoconductive effect tend to suffer from high driving source-drain voltages and significant dark noise currents.Herein,a self-powered photodetector with high performance was fabricated based on vertically stacked graphene/MoSe_(2)/PdSe_(2)/graphene heterojunctions through a dry transfer method.The fabricated device displays current rectification characteristics in darkness(on/off ratio>10^(3))and superior photovoltaic behaviors under illumination.In addition,benefitting from the strong built-in field,the Gr/PdSe_(2)/MoSe_(2)/Gr heterojunction photodetector is able to respond to a broad spectrum from visible to near-infrared(NIR)with a remarkable responsivity of 651 mA·W^(−1),a high specific detectivity of 5.29×10^(11) Jones and a fast response speed of 41.7/62.5μs.Moreover,an enhanced responsivity of 1.16 A·W^(−1) has been obtained by a reverse voltage(−1 V)and further evaluation on image recognition has also demonstrated the great application potential of the Gr/MoSe_(2)/PdSe_(2)/Gr heterojunction photodetector.The findings are expected to bring new opportunities for the development of highly sensitive,high-speed and energy-efficient photodetectors for comprehensive applications.

关键词： heterostructure MoSe_(2) PdSe_(2) self-powered photodetector high performance

High-performance omnidirectional self-powered photodetector constructed by CsSnBr_(3)/ITO heterostructure film

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Journal of Electronic Science and Technology 2023年第2期21卷 78-86页

作者： Dong Liu Feng-Jing Liu Jie Zhang Zi-Xu Sa Ming-Xu Wang Sen Po Yip Jun-Chen Wan Peng-Sheng Li Zai-Xing Yang School of Physics School of MicroelectronicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China Institute for Materials Chemistry and Engineering Kyushu UniversityFukuoka816-8580Japan

Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.

关键词： Chemical vapor deposition CsSnBr_(3)/ITO heterostructure film Omnidirectional self-powered photodetector

High-performance self-powered ultraviolet to near-infrared photodetector based on WS_(2)/InSe van der Waals heterostructure

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Nano Research 2023年第5期16卷 7851-7857页

作者： Jinping Chen Zhen Zhang Yi Ma Jiying Feng Xiaoyu Xie Xiaoxuan Wang Aoqun Jian Yuanzheng Li Zhuxin Li Heng Guo Yizhi Zhu Qiannan Cui Zengliang Shi Chunxiang Xu State Key Laboratory of Bioelectronics School of Biological Science and Medical EngineeringSoutheast UniversityNanjing 210096China Micro Nano System Research Center Key Laboratory of Advanced Transducers and Intelligent Control System of the Ministry of Education&College of Information Engineering and ComputerTaiyuan University of TechnologyTaiyuan 030024China Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education Northeast Normal UniversityChangchun 130024China

van der Waals heterostructures(vdWHs)based on two-dimensional(2D)materials without the crystal lattice matching constraint have great potential for high-performance optoelectronic devices.Herein,a WS_(2)/InSe vdWH photodiode is proposed and fabricated by precisely stacking InSe and WS_(2)flakes through an all-dry transfer method.The WS_(2)/InSe vdWH forms an n–n heterojunction with strong built-in electric field due to their intrinsic n-type semiconductor characteristics and energy-band alignments with a large Fermi level offset between WS_(2)and InSe.As a result,the device displays excellent photovoltaic behavior with a large open voltage of 0.47 V and a short-circuit current of 11.7 nA under 520 nm light illumination.Significantly,a fast rising/decay time of 63/76μs,a large light on/off ratio of 105,a responsivity of 61 mA/W,a high detectivity of 2.5×10^(11) Jones,and a broadband photoresponse ranging from ultraviolet to near-infrared(325–980 nm)are achieved at zero bias.This study provides a strategy for developing high-performance self-powered broadband photodetectors based on 2D materials.

关键词： two-dimensional materials van der Waals heterostructure self-powered photodetector photocurrent

High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition

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Chinese Physics B 2020年第9期29卷 569-573页

作者：郭德双李微王登魁孟兵恒房丹魏志鹏 State Key Laboratory of High Powder Semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022China

self-powered photodetectors based on nanomaterials have attracted lots of attention for several years due to their various advantages.In this paper,we report a high performance Cu2O/ZnO self-powered photodetector fabricated by using electrochemical deposition.ZnO nanowires arrays grown on indium-tin-oxide glass are immersed in Cu2O film to construct type-Ⅱband structure.The Cu2O/ZnO photodetector exhibits a responsivity of 0.288 mA/W at 596 nm without bias.Compared with Cu2O photoconductive detector,the responsivity of the Cu2O/ZnO self-powered photodetector is enhanced by about two times at 2 V bias.It is attributed to the high power conversion efficiency and the efficient separation of the photogenerated electron-hole pairs,which are provided by the heterojunction.The outstanding comprehensive performances make the Cu2O film/ZnO nanowires self-powered photodetector have great potential applications.

关键词： electrochemical deposition Cu2O/ZnO self-powered photodetector responsivity

Carrier recombination suppression and transport enhancement enable high-performance self-powered broadband Sb_(2)Se_(3) photodetectors

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InfoMat 2023年第4期5卷 60-76页

作者： Shuo Chen Yi Fu Muhammad Ishaq Chuanhao Li Donglou Ren Zhenghua Su Xvsheng Qiao Ping Fan Guangxing Liang Jiang Tang Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenGuangdongthe People's Republic of China MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanningGuangxithe People's Republic of China State Key Laboratory of Silicon Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhouZhejiangthe People's Republic of China Wuhan National Laboratory for Optoelectronics(WNLO) School of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhanHubeithe People's Republic of China

Antimony selenide(Sb_(2)Se_(3))is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties.Achieving high-performance self-powered Sb_(2)Se_(3)photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation.In this study,an effective two-step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self-assembled growth of Sb_(2)Se_(3)light absorbing thin film with large crystal grains and desirable[hk1]orientation,presenting considerable thin-film photodetector performance.Furthermore,aluminum(Al^(3+))cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer,and further optimize the Sb_(2)Se_(3)/CdS(Al)heterojunction interface quality.Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics,the champion Mo/Sb_(2)Se_(3)/CdS(Al)/ITO/Ag photodetector exhibits self-powered and broadband characteristics,accompanied by simultaneously high responsivity of 0.9 A W^(-1)(at 11 nW cm^(-2)),linear dynamic range of 120 dB,impressive ON/OFF switching ratio over 10^(6)and signal-to-noise ratio of 10^(9),record total noise determined realistic detectivity of 4.78×10^(12)Jones,and ultra-fast response speed with rise/decay time of 24/75 ns,representing the top level for Sb_(2)Se_(3)-based photodetectors.This intriguing work opens up an avenue for its selfpowered broadband photodetector applications.

关键词： photoresponse recombination suppression Sb_(2)Se_(3) self-powered photodetector transport enhancement

Perovskite-Inspired Lead-Free Ag2BiI5 for self-powered NIR-Blind Visible Light Photodetection

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Nano-Micro Letters 2020年第2期12卷 199-210页

作者： Vincenzo Pecunia Yue Yuan Jing Zhao Kai Xia Yan Wang Steffen Duhm Luis Portilla Fengzhu Li Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Soochow University

In recent years,solution-processible semiconductors with perovskite or perovskite-inspired structures have been extensively investigated for optoelectronic applications.In particular,silver-bismuth-halides have been identified as especially promising because of their bulk properties and lack of heavily toxic elements.This study investigates the potential of Ag2BiI5 for near-infrared(NIR)-blind visible light photodetection,which is critical to emerging applications(e.g.,wearable optoelectronics and the Internet of Things).self-powered photodetectors were realized and provided a near-constant≈100 mA W−1 responsivity through the visible,a NIR rejection ratio of>250,a long-wavelength responsivity onset matching standard colorimetric functions,and a linear photoresponse of>5 orders of magnitude.The optoelectronic characterization of Ag2BiI5 photodetectors additionally revealed consistency with one-center models and the role of the carrier collection distance in self-powered mode.This study provides a positive outlook of Ag2BiI5 toward emerging applications on low-cost and low-power NIR-blind visible light photodetector.

关键词： Perovskite-inspired semiconductor Silver bismuth iodide self-powered photodetector NIR-blind photodetector Visible light photodetector

Strain-Modulated Photoelectric Responses from a Flexibleα-In_(2)Se_(3)/3R MoS_(2)Heterojunction

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Nano-Micro Letters 2021年第7期13卷 1-11页

作者： Weifan Cai Jingyuan Wang Yongmin He Sheng Liu Qihua Xiong Zheng Liu Qing Zhang Center for Micro-and Nano-Electronics School of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore 639798Singapore School of Materials Science and Engineering Nanyang Technological UniversitySingapore 639798Singapore Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore 639798Singapore

Semiconducting piezoelectricα-In_(2)Se_(3) and 3R MoS_(2) have attracted tremendous attention due to their unique electronic properties.Artificial van der Waals(vdWs)hetero-structures constructed withα-In_(2)Se_(3)and 3R MoS_(2)flakes have shown promising applications in optoelectronics and photocatal-ysis.Here,we present the first flexibleα-In_(2)Se_(3)/3R MoS_(2)vdWs p-n heterojunction devices for photodetection from the visible to near infrared region.These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9×10^(3)A W^(−1) and a substantial specific detectivity of 6.2×10^(10) Jones under a compressive strain of−0.26%.The photocurrent can be increased by 64%under a tensile strain of+0.35%,due to the heterojunction energy band modulation by piezoelectric polarization charges at the hetero-junction interface.This work demonstrates a feasible approach to enhancement of α-In_(2)Se_(3)/3R MoS_(2) photoelectric response through an appropriate mechanical stimulus.

关键词： α-In_(2)Se_(3)/3R MoS_(2)heterojunction Flexible self-powered photodetector Strain modulation Piezoelectric charge