Enhanced-performance self-powered photodetector based on multi-layer MoS_(2) sandwiched between two asymmetric graphene contacts

作     者：GUO JunXiong LI ShangDong LIN Lin CAI Ji CHEN JianBo WANG ShiCai GOU Xin YE JingHua LUO ZhengHua HUANG Wen 

作者机构：School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China School of Electronics and Information Technology(School of Microelectronics)Sun Yat-sen UniversityGuangzhou 510006China School of Electronic Science and Engineering(National Exemplary School of Microelectronics).University of Electronic Science and Technologyof ChinaChengdu 610054China College of Materials Science and EngineeringSichuan UniversityChengdu 610064China Sichuan Time Frequency Synchronization System and Application Engineering Technology Research CenterChengdu 610062China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2022年第65卷第11期

页      面：2658-2666页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.61971108) Science and Technology Foundation of Sichuan Province(Grant No.2021YFS0311) 

主　　题：MoS_(2) graphene self-powered photodetector asymmetric contact 

摘      要：Self-powered photodetectors can convert light into electrical signals without external power input and are widely used in applications such as imaging,sensing,communication,and *** most popular approach for constructing a self-powered photodetector is typically based on the fabrication of an asymmetric metal-semiconductor(MS)contact;however,this technique is seriously limited by the Fermi-level pinning ***,we report a room-temperature photodetector based on multi-layer MoS_(2) sandwiched between two separated asymmetric graphene *** photodetector was driven by the built-in electric field generated by a van der Waals(vd W)contact instead of the traditional MS *** under zero-bias voltage,the highest photoresponsivity of 0.63 AW^(-1) and a specific detectivity of 7.71×10^(12) Jones were achieved at a wavelength of 450 nm with 0.08μW cm^(-2) incident power *** with devices using symmetric contacts,a high ON/OFF current ratio of approximately 1520 and a fast response time on the order of microseconds were also observed in our asymmetric graphene contact *** experimental results may open a novel way toward the realization of vd W contacts for the fabrication of selfpowered photodetectors.