PdSe_(2)/MoSe_(2) vertical heterojunction for self-powered photodetector with high performance
作者机构：School of Physics and ElectronicsHunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South UniversityChangsha 410083China State Key Laboratory of High-Performance Complex ManufacturingCentral South UniversityChangsha 410083China School of Chemical and Biomolecular EngineeringThe University of SydneyNSW 2006Australia The University of Sydney Nano InstituteThe University of SydneyNSW 2006Australia Shenzhen Research Institute of Central South UniversityA510aVirtual University BuildingSouthern DistrictHigh-tech Industrial ParkYuehai StreetNanshan DistrictShenzhen 518057China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2022年第15卷第3期
页 面：2489-2496页
核心收录：
基 金：the National Natural Science Foundation of China(No.61775241) the Hunan Science Fund for Distinguished Young Scholar(No.2020JJ2059) Hunan Province Key Research and Development Project(No.2019GK2233) Youth Innovation Team(No.2019012)of CSU Hunan Province Graduate Research and Innovation Project(No.CX20190177) the Science and Technology Innovation Basic Research Project of Shenzhen(No.JCYJ20180307151237242) Also,Y.P.L.acknowledges the supported by the Project of State Key Laboratory of High-Performance Complex Manufacturing,Central South University(No.ZZYJKT2020-12) Z.W.L.thanks the funding support from the Australian Research Council(ARC Discovery Projects,Nos.DP210103539,DP180102976,and DP130104231)
主 题：heterostructure MoSe_(2) PdSe_(2) self-powered photodetector high performance
摘 要：Van der Waals’two-dimensional(2D)material heterostructure engineering offers an effective strategy for the design of multifunctional and high-performance optoelectronic ***,2D heterostructure photodetectors with a photoconductive effect tend to suffer from high driving source-drain voltages and significant dark noise ***,a self-powered photodetector with high performance was fabricated based on vertically stacked graphene/MoSe_(2)/PdSe_(2)/graphene heterojunctions through a dry transfer *** fabricated device displays current rectification characteristics in darkness(on/off ratio10^(3))and superior photovoltaic behaviors under *** addition,benefitting from the strong built-in field,the Gr/PdSe_(2)/MoSe_(2)/Gr heterojunction photodetector is able to respond to a broad spectrum from visible to near-infrared(NIR)with a remarkable responsivity of 651 mA·W^(−1),a high specific detectivity of 5.29×10^(11) Jones and a fast response speed of 41.7/62.5μ***,an enhanced responsivity of 1.16 A·W^(−1) has been obtained by a reverse voltage(−1 V)and further evaluation on image recognition has also demonstrated the great application potential of the Gr/MoSe_(2)/PdSe_(2)/Gr heterojunction *** findings are expected to bring new opportunities for the development of highly sensitive,high-speed and energy-efficient photodetectors for comprehensive applications.
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