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Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

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Journal of Semiconductors 2010年第12期31卷 43-48页

作者：周海亮郝跃张民选 School of Computer National University of Defense Technology School of Microelectronics Xidian University

Due to carrier band-to-band-tunneling （BTBT） through channel-source/drain contacts, conventional MOS- like Carbon Nanotube Field Effect Transistors （C-CNFETs） suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green＇s function （NEGF） formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold perfor- mance, even with source/drain contacts being of schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application.

关键词： sub-threshold slope ambipolar conductance electrostatic doping BTBT schottky contact CNFET

Analysis of the effect of sidewall on the performance of 6H-SiC schottky barrier source／drain NMOSFETs

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Chinese Physics B 2004年第7期13卷 1110-1113页

作者：汤晓燕张义门张玉明郜锦侠 MicroelectronicsInstitute XidianUniversityXi'an710071China

Between source/drain and gate of SiC schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strongly affects on the device performance. In this paper the effect of sidewall on the performance of 6H-SiC SBSD-NMOSFET is simulated with the 2D simulator MEDICI. The simulated results show that a sidewall with width less than 0.1μm slightly affects the device performance. However, when the width of sidewall exceeds 0.1μm, the conduction does not occur until the drain voltage is high enough and saturation current sharply decreases. The effect of the sidewall on device performance can be reduced by decreasing the doping concentration in the epitaxial layer.

关键词： 6H-SiC schottky contact sidewall MOSFET

How to characterize capacitance of organic optoelectronic devices accurately

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Chinese Physics B 2018年第6期27卷 382-386页

作者： Hao-Miao Yu Yun He Key Laboratory of Luminescence and Optical Information Ministry of Education School of Science Beijing Jiaotong University Beijing 100044 China National Key Laboratory of Science and Technology on Space Microwave China Academy of Space Technology （Xi＇ an） Xi＇ an 710100 China

The selection of circuit model（i.e., parallel or series model） is critical when using a capacitance–frequency and capacitance–voltage technique to probe properties of organic materials and physical processes of organic optoelectronic devices. In the present work, capacitances of ITO/Alq3/Al and ITO/CuPc/Al are characterized by series and parallel model,respectively. It is found that the large series resistance comes from the ITO electrode and results in the inapplicability of the parallel model to measuring the capacitances of organic devices at high frequencies. An equivalent circuit model with consideration of the parasitical inductance of cables is constructed to derive the capacitance, and actual capacitance–frequency spectra of Alq3 and CuPc devices are obtained. Further investigation of temperature-dependent capacitance–frequency and capacitance–voltage characteristics indicates that CuPc and Al form the schottky contact, the density and ionization energy of impurities in CuPc are obtained. Moreover, more practical guidelines for accurate capacitance measurement are introduced instead of the impedance magnitude, which will be very helpful for the organic community to investigate capacitance-related characteristics when dealing with various organic optoelectronic devices.

关键词： organic semiconductor capacitance characterization schottky contact ionization energy

Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector

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Journal of Semiconductors 2010年第6期31卷 65-69页

作者：陈斌杨银堂李跃进刘红霞 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

Based on thermionic emission theory,a model of a 6H-SiC metal-semiconductor-metal（MSM） ultraviolet photodetector is established with the simulation package ISE-TCAD.A device with 3μm electrode width（W） and 3μm electrode spacing（L） is *** findings show that the MSM photodetector has quite a low dark current of 15 pA at 10V bias and the photocurrent is two orders of magnitude higher than the dark *** influences of different structures on dark and illuminated current-voltage characteristics of the MSM photodetector are investigated to optimize the device *** results indicate that the maximum photocurrent and the highest ratio of photocurrent to dark current at 15 V bias are 5.3 nA and 327 with device parameters of W=6μm,L=3μm and W =3μm,L=6μm,respectively.

关键词： MSM structure ultraviolet photodetector schottky contact I-V characteristics

Enhanced performance of GaN nanobelt-based photodetectors by means of piezotronic effects

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Nano Research 2013年第10期6卷 758-766页

作者： Ruomeng Yu Caofeng Pan Youfan Hu Lin Li Hongfei Liu Wei Liu Soojin Chua Dongzhi Chi Zhong Lin Wang School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332-0245 USA Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing China School of Physics Georgia Institute of Technology Atlanta Georgia 30332 USA Institute of Materials Research and Engineering A ＊STAR (Agency for Science Technology and Research) Singapore 117602 Singapore School of Electrical and Electronic Engineering Luminousl Center of Excellence for Semiconductor Lighting and Display Nanyang Technology University Singapore 639798 Singapore

GaN ultraviolet （UV） photodetectors （PDs） have attracted tremendous attention due to their chemical stability in harsh environments. Although schottky- contacted GaN-based UV PDs have been implemented with better performance than that of ohmic contacts, it remains unknown how the barrier height at local schottky contacts controls the sensors＇ performance. In this work, the piezotronic effect was employed to tune the schottky barrier height （SBH） at local contacts and hence enhance the performances of schottky-contacted metal-semiconductor- metal （MSM） structured GaN nanobelt （NB）-based PDs. In general, the response level of the PDs was obviously enhanced by the piezotronic effect when applying a strain on devices. The responsivity of the PD was increased by 18%, and the sensitivity was enhanced by from 22% to 31%, when illuminated by a 325 nm laser with light intensity ranging from 12 to 2 W/cm2. Carefully studying the mechanism using band structure diagrams reveals that the observed enhancement of the PD performance resulted from the change in SBH caused by external strain as well as light intensity. Using piezotronic effects thus provides a practical way to enhance the performance of PDs made not only of GaN, but also other wurtzite and zinc blende family materials.

关键词： GaN nanobelts schottky contact piezotronics photodetector

Theoretical Analysis of the Effect of the Interfacial MoSe<sub>2</sub>Layer in CIGS-Based Solar Cells

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Open Journal of Modelling and Simulation 2021年第4期9卷 339-350页

作者： Adama Sylla N’Guessan Armel Ignace Touré Siaka Jean-Pierre Vilcot Laboratoitre d’Energie Solaire Universit&#233 F&#233lix Houphou&#235t Boigny Abidjan C&#244te d’Ivoire. Institut d’Electronique de Micro&#233lectronique et de Nanotechnologie (IEMN) UMR CNRS 8520. Laboratoire Central Villeneuve d’Ascq Cedex Lille France

The aim of this work is to analyze the influence of the interfacial MoSe2 layer on the performance of a /n-ZnO/i-ZnO/n-Zn(O,S)/p-CIGS/p+-MoSe2/Mo/SLG solar cell. In this investigation, the numerical simulation software AFORS-HET is used to calculate the electrical characteristics of the cell with and without this MoSe2 layer. Different reported experimental works have highlighted the presence of a thin-film MoSe2 layer at the CIGS/Mo contact interface. Under a tunneling effect, this MoSe2 layer transforms the Schottky CIGS/Mo contact nature into a quasi-ohmic one. Owing to a heavily p-doping, the MoSe2 thin layer allows better transport of majority carrier, tunneling them from CIGS to Mo. Moreover, the bandgap of MoSe2 is wider than that of the CIGS absorbing layer, such that an electric field is generated close to the back surface. The presence of this electric field reduces carrier recombination at the interface. Under these conditions, we examined the performance of the cell with and without MoSe2