Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure

作     者：O.Ya Olikh K.V.Voitenko R.M.Burbelo Ja M.Olikh 

作者机构：Faculty of PhysicsTaras Shevchenko National University of Kyiv V Lashkaryov Institute of Semiconductor PhysicsNational Academy of Sciences of Ukraine 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2016年第37卷第12期

页      面：5-11页

核心收录：

学科分类：07[理学] 08[工学] 070206[理学-声学] 0802[工学-机械工程] 0702[理学-物理学] 

主　　题：Schottky contact leakage current ultrasound influence 

摘      要：The influence of ultrasonic loading on reverse current-voltage characteristics of Mo/n-n＋-Si structures has been investigated. The research of leakage current variation has been carried out for various ultrasonic wave frequencies （4.1 and 8.4 MHz）, intensities （up to 0.8 W/cm2） and loading temperatures （130-330 K）. The observed reversible acoustically induced increase in reverse currents was as large as 60%. It has been found that dominant charge transfer mechanisms are the thermionic emission （at high temperature） and the phonon-assisted tunneling （at low temperature）. The ultrasound loading affects both processes due to the decrease of Schottky barrier height and binding energy of the electron on the trap.