Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

作     者：周海亮 郝跃 张民选 

作者机构：School of ComputerNational University of Defense Technology School of MicroelectronicsXidian University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第12期

页      面：43-48页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National High-Tech Research & Development Program of China(Nos.2009AA01Z124 2009AA01Z114) 

主　　题：sub-threshold slope ambipolar conductance electrostatic doping BTBT Schottky contact CNFET 

摘      要：Due to carrier band-to-band-tunneling （BTBT） through channel-source/drain contacts, conventional MOS- like Carbon Nanotube Field Effect Transistors （C-CNFETs） suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green＇s function （NEGF） formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold perfor- mance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application.