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resistive switching and artificial synaptic performances of memristor based on low-dimensional bismuth halide perovskites

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Nano Research 2023年第7期16卷 10108-10119页

作者： Feifei Luo Yanzhao Wu Junwei Tong Fubo Tian Xianmin Zhang Key Laboratory for Anisotropy and Texture of Materials(Ministry of Education) School of Materials Science and EngineeringNortheastern UniversityShenyang 110819China Department of Physics Freie Universität Berlin14195 BerlinGermany State Key Laboratory of Superhard Materials College of PhysicsJilin UniversityChangchun 130012China

Zero-dimensional(0D)-Cs_(3)Bi_(2)I_(9),two-dimensional(2D)-Cs_(3)Bi_(2)Br_(9),and one-dimensional(1D)-Cs3Bi2Cl9 perovskite films have been successfully grown on indium tin oxide(ITO)glass substrates,which were used to fabricate memristors with the structure of Al/Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)/ITO *** current three types of memristors exhibited bipolar resistive switching *** the endurance and retention time tests clearly demonstrated the excellent stability of present ***,the ON/OFF ratio of the 0D-Cs_(3)Bi_(2)I_(9)device is close to 104 at the reading voltage of 0.1 V,which is nearly 100 and 1000 times larger than those of the 1D-Cs3Bi2Cl9 device and the 2D-Cs_(3)Bi_(2)Br_(9)device,*** activation energy of halide vacancies in the Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)films was calculated using the density functional theory by considering a minimum migration path,demonstrating the dimensionality of the Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)film affected the formation and rupture of conductive ***,the short-term plasticity and long-term plasticity of biological synapse were simulated by evaluating the conductance responses of Al/Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)/ITO devices under various voltage pulses in *** duration time of long-term plasticity in all the present devices can last for up to 250 *** 0D-Cs_(3)Bi_(2)I_(9)device showed both the highest spikeduration-dependent plasticity and paired-pulse facilitation indexes compared to the other two ***,the 0DCs_(3)Bi_(2)I_(9)device successfully established the associative learning behavior by simulating the Pavlov’s dog experiment.

关键词： perovskite films low-dimension resistive switching artificial synapse

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resistive switching and optical properties of strontium ferrate titanate thin film prepared via chemical solution deposition

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Journal of Advanced Ceramics 2021年第5期10卷 1001-1010页

作者： Jun LI Xingui TANG Qiuxiang LIU Yanping JIANG Zhenxun TANG School of Physics and Optoelectric Engineering Guangdong University of TechnologyGuangzhou 510006China

The polycrystalline strontium ferrate titanate(SrFe_(0.1)Ti_(0.9)O_(3),SFTO)thin films have been successfully prepared by chemical solution *** analyzing the current-voltage(I-V)characteristics,we discuss the conduction mechanism of *** is found that the number of oxygen vacancy defects is increased by Fe ion doping,making SFTO be with better resistive switching *** ion doping can also enhance the absorption of strontium titanate to be exposed to visible light,which is associated with the change of energy *** band gap width(2.84 eV)of SFTO films is figured out,which is less than that of pure strontium *** to more oxygen vacancy defects caused by Fe ion doping,the band gap width of strontium titanate was reduced *** defect types of SFTO thin films can be determined by electron paramagnetic resonance *** addition,we analyzed the energy band and state density of SFTO by first-principles calculation based on density functional theory,and found that Fe ion doping can reduce the band gap width of strontium titanate with micro-regulation on the band structure.A chemical state of SFTO was analyzed by X-ray photo electron *** the same time,the structure and morphology of SFTO were characterized by X-ray diffraction and scanning electron *** study deepens further understanding of the influence of Fe ion doping on the structure and properties of strontium ferrate titanate,which is expected to be a functional thin film material for memristor devices.

关键词： SrTiO_(3) thin films resistive switching oxygen vacancy first principles

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resistive switching behavior and mechanism of HfO_(x) films with large on/off ratio by structure design

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Chinese Physics B 2024年第1期33卷 660-665页

作者：黄香林王英黄慧香段理郭婷婷 School of Materials Science and Engineering Chang'an UniversityXi'an 710061China

Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.

关键词： HfO_(x)film resistive switching structure design interface modulation

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resistive switching performance improvement of In GaZnO-based memory device by nitrogen plasma treatment

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Journal of Materials Science & Technology 2020年第14期47卷 1-6页

作者： Li Zhang Zhong Xu Jia Han Lei Liu Cong Ye Yi Zhou Wen Xiong Yanxin Liu Gang He Faculty of Physics and Electronic Science Hubei UniversityHubei Key Laboratory of Ferro-&Piezoelectric Materials and DevicesHubei Key Laboratory of Applied MathematicsWuhan430062China School of Physics and Materials Science Radiation Detection Materials&Device LabAnhui UniversityHefei230039China School of Microelectronics Tianjin Key Laboratory of Imaging and Sensing Microelectronic TechnologyTianjin UniversityTianjin300072China

With the demand of flat panel display development,utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide(IGZO)film may be integrated with IGZO thin film transistors(TFTs)to accomplish system-on-panel *** this work,1×1μm^2 via hole structure IGZO based memory device was fabricated and the resistive switching(RS)behavior was *** inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/Ti N device,highly improved RS performance including lower forming voltage,remarkable uniformity,large memory window of 102,retention property of 10^4 s at 125℃,excellent pulse endurance of 10^7 cycles were *** X-ray photoelectron spectroscopy analysis indicates that plasma doping method can evenly dope nitrogen and induce more non-lattice oxygen in the IGZO *** is deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments,which results in more stable and uniform performance.

关键词： Memory device resistive switching Plasma treatment Indium-gallium-zinc-oxide Memristor

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resistive switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications

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Journal of Electronic Science and Technology 2017年第4期15卷 364-368页

作者： Zhi-Peng Wu Jun Zhu Li-Bin Fang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054 China

Unipolar resistive switching behaviors of the ZnO and ALO/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. Xray diffraction results indicated that ZnO film has a dominant peak at(002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of ALO/ZnO films had stable resistive switching behaviors with a good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1V, which is better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmic’s behaviors. The endurance of the bilayer(BL) device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications.

关键词： Flexible pulsed laser deposition resistive switching ZnO thin film

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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

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Chinese Physics B 2016年第12期25卷 418-423页

作者：马寒露王中强徐海阳张磊赵晓宁韩曼舒马剑钢刘益春 Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet (UV) Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University

In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.

关键词： resistive switching unipolar bipolar oxygen vacancy metal conductive filament

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Flexible cation-based threshold selector for resistive switching memory integration

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Science China(Information Sciences) 2018年第6期61卷 50-57页

作者： Xiaolong ZHAO Rui WANG Xiangheng XIAO Congyan LU Facai WU Rongrong CAO Changzhong JIANG Qi LIU Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam ApplicationWuhan University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences

Emerging resistive switching random access memory（RRAM）, considered as the most promising candidate of flash memory, is favorable for in flexible electronic system. However, in high density flexible crossbar RRAM array, crosstalk issue that currents from the neighboring unselected cell lead to failure of write and read operations, still keeps a main bottleneck. Therefore, flexible selector compatible with the flexibility of the RRAM array should be focused on to configure one selector-one resistor（1 S1 R） system,which is immune to crosstalk issue. In this paper, flexible cation-based threshold switching（TS） selectors（Pt/Ag/Hf O;/Pt/Ti/parylene） are fabricated and the compressive performance is studied *** device shows excellent bidirectional volatile TS characteristics, including high selectivity ratio（10;）, low operating voltages（|VTH|<1 V）, ultra-low leakage current(～10;A) and good flexibility. The successful demonstration of the wire connected 1 S1 R unit comprising this flexible selector and one bipolar resistor cell indicates the great potential of this cation-based selector to restrain the crosstalk issue in a large flexible RRAM array.

关键词： cation-based threshold switching resistive switching flexible selector conductive filament(CF) 1S1R

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Demonstration of synaptic and resistive switching characteristics in W/TiO_(2)/HfO_(2)/TaN memristor crossbar array for bioinspired neuromorphic computing

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Journal of Materials Science & Technology 2022年第1期96卷 94-102页

作者： Muhammad Ismail Umesh Chand Chandreswar Mahata Jamel Nebhen Sungjun Kim Division of Electronics and Electrical Engineering Dongguk UniversitySeoul 04620South Korea Department of Electrical and Computer Engineering National University SingaporeSingapore 117583Singapore College of Computer Engineering and Sciences Prince Sattam bin Abdulaziz UniversityAl-Kharj 11942Saudi Arabia

In this study,resistive random-access memory(RRAM)-based crossbar arrays with a memristor W/TiO_(2)/HfO_(2)/TaN structure were fabricated through atomic layer deposition(ALD)to investigate synaptic plasticity and resistive switching(RS)characteristics for bioinspired neuromorphic computing.X-ray photoelectron spectroscopy(XPS)was employed to explore oxygen vacancy concentrations in bilayer TiO_(2)/HfO_(2)*** fitting for O1s peaks confirmed that the HfO_(2)layer contained a larger number of oxygen vacancies than the TiO_(2)*** addition,HfO_(2)had lower Gibbs free energy(ΔG°=-1010.8 kJ/mol)than the TiO_(2)layer(ΔG°=-924.0 kJ/mol),resulting in more oxygen vacancies in the HfO_(2)*** results andΔG°magnitudes confirmed that formation/disruption of oxygen-based conductive filaments took place in the TiO_(2)*** W/TiO_(2)/HfO_(2)/TaN memristive device exhibited excellent and repeatable RS characteristics,including superb 10^(3) dc switching cycles,outstanding 107 pulse endurance,and high-thermal stability(10^(4) s at 125℃)important for digital computing ***,some essential biological synaptic characteristics such as potentiation-depression plasticity,paired-pulse facilitation(PPF),and spike-timing-dependent plasticity(STDP,asymmetric Hebbian and asymmetric anti-Hebbian)were successfully mimicked herein using the crossbar-array memristive *** on experimental results,a migration and diffusion of oxygen vacancy based physical model is proposed to describe the synaptic plasticity and RS *** study demonstrates that the proposed W/TiO_(2)/HfO_(2)/TaN memristor crossbar-array has a significant potential for applications in non-volatile memory(NVM)and bioinspired neuromorphic systems.

关键词： resistive switching Crossbar-array memristive device Synaptic plasticity TiO_(2)/HfO_(2)film Oxygen vacancy

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Scalable nanocomposite parylene-based memristors:Multifilamentary resistive switching and neuromorphic applications

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Nano Research 2023年第2期16卷 3207-3214页

作者： Anna N.Matsukatova Artem Yu.Vdovichenko Timofey D.Patsaev Pavel A.Forsh Pavel K.Kashkarov Vyacheslav A.Demin Andrey V.Emelyanov National Research Centre“Kurchatov Institute” Moscow 123182Russia Physics Department Lomonosov Moscow State UniversityMoscow 119991Russia Moscow Institute of Physics and Technology DolgoprudnyjMoscow oblast 141701Russia Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of SciencesMoscow 117993Russia Physics Department Saint Petersburg State UniversitySt.Petersburg 199034Russia

Memristors are promising candidates for synapse emulation in brain-inspired neuromorphic computing *** main obstacle to their usage in such systems is high variability of memristive characteristics and its severe negative effect on the neural network *** paper addresses the issue from two points of view on the example of the parylene-based memristors:(i)the methods of the memristor internal stochasticity decrease and(ii)the methods of the memristive neural network architecture *** introduction of an optimal Ag nanoparticle concentration(3 vol.%–6 vol.%)to the memristive structure leads to a statistically significant decrease in the switching voltage variation and endurance ***,it is shown that post-fabrication annealing improves memristive characteristics,e.g.,resistive switching window increases by an order of magnitude and exceeds 106,the switching voltage variation decreases by a factor of 2(down to 7%for the set and 17%for the reset voltage),and thermostability is *** transmission electron microscopy and impedance spectroscopy analysis allowed establishing a multifilamentary resistive switching mechanism for nanocomposite parylene-based *** simulation of the formal neural network based on these memristors demonstrates high classification accuracy with low variation for an important biomedical task,heart disease prediction,after careful feature selection and network architecture *** prospects of the controlled incorporation of the nanocomposite parylene-based memristors in neural networks are brightened by their scaling possibility in crossbar geometry.

关键词： memristor resistive switching neuromorphic computing parylene nanocomposite

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Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

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Chinese Physics B 2013年第10期22卷 533-538页

作者：袁学勇罗丽荣吴迪徐庆宇 Department of Physics Southeast University Key Laboratory of MEMS of the Ministry of Education Southeast University School of Materials Science and Technology Nanjing University of Aeronautics and Astronautics Department of Materials Science and Engineering Nanjing University

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.

关键词： multiferroics resistive switching

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