Resistive switching performance improvement of In GaZnO-based memory device by nitrogen plasma treatment

作     者：Li Zhang Zhong Xu Jia Han Lei Liu Cong Ye Yi Zhou Wen Xiong Yanxin Liu Gang He Li Zhang;Zhong Xu;Jia Han;Lei Liu;Cong Ye;Yi Zhou;Wen Xiong;Yanxin Liu;Gang He

作者机构：Faculty of Physics and Electronic ScienceHubei UniversityHubei Key Laboratory of Ferro-&Piezoelectric Materials and DevicesHubei Key Laboratory of Applied MathematicsWuhan430062China School of Physics and Materials ScienceRadiation Detection Materials&Device LabAnhui UniversityHefei230039China School of MicroelectronicsTianjin Key Laboratory of Imaging and Sensing Microelectronic TechnologyTianjin UniversityTianjin300072China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2020年第47卷第14期

页      面：1-6页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Key Research and Development Program under Grant 2017YFB0405600 National Natural Science Foundation of China(No.61774057) The Open Fund of State Key Laboratory on Integrated Optoelectronics(IOSKL2018KF08) The Open Fund of Hubei Key Laboratory of Applied Mathematics(HBAM 201801) 

主　　题：Memory device Resistive switching Plasma treatment Indium-gallium-zinc-oxide Memristor 

摘      要：With the demand of flat panel display development,utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide(IGZO)film may be integrated with IGZO thin film transistors(TFTs)to accomplish system-on-panel *** this work,1×1μm^2 via hole structure IGZO based memory device was fabricated and the resistive switching(RS)behavior was *** inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/Ti N device,highly improved RS performance including lower forming voltage,remarkable uniformity,large memory window of 102,retention property of 10^4 s at 125℃,excellent pulse endurance of 10^7 cycles were *** X-ray photoelectron spectroscopy analysis indicates that plasma doping method can evenly dope nitrogen and induce more non-lattice oxygen in the IGZO *** is deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments,which results in more stable and uniform performance.