Resistive switching and artificial synaptic performances of memristor based on low-dimensional bismuth halide perovskites
作者机构：Key Laboratory for Anisotropy and Texture of Materials(Ministry of Education)School of Materials Science and EngineeringNortheastern UniversityShenyang 110819China Department of PhysicsFreie Universität Berlin14195 BerlinGermany State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun 130012China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2023年第16卷第7期
页 面：10108-10119页
核心收录：
学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：This work was supported by the National Natural Science Foundation of China(Nos.52271238 and 51971057) the Liaoning Revitalization Talents Program(No.XLYC2002075) the Research Funds for the Central University(Nos.N2202004 and N2102012)
主 题：perovskite films low-dimension resistive switching artificial synapse
摘 要：Zero-dimensional(0D)-Cs_(3)Bi_(2)I_(9),two-dimensional(2D)-Cs_(3)Bi_(2)Br_(9),and one-dimensional(1D)-Cs3Bi2Cl9 perovskite films have been successfully grown on indium tin oxide(ITO)glass substrates,which were used to fabricate memristors with the structure of Al/Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)/ITO *** current three types of memristors exhibited bipolar resistive switching *** the endurance and retention time tests clearly demonstrated the excellent stability of present ***,the ON/OFF ratio of the 0D-Cs_(3)Bi_(2)I_(9)device is close to 104 at the reading voltage of 0.1 V,which is nearly 100 and 1000 times larger than those of the 1D-Cs3Bi2Cl9 device and the 2D-Cs_(3)Bi_(2)Br_(9)device,*** activation energy of halide vacancies in the Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)films was calculated using the density functional theory by considering a minimum migration path,demonstrating the dimensionality of the Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)film affected the formation and rupture of conductive ***,the short-term plasticity and long-term plasticity of biological synapse were simulated by evaluating the conductance responses of Al/Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)/ITO devices under various voltage pulses in *** duration time of long-term plasticity in all the present devices can last for up to 250 *** 0D-Cs_(3)Bi_(2)I_(9)device showed both the highest spikeduration-dependent plasticity and paired-pulse facilitation indexes compared to the other two ***,the 0DCs_(3)Bi_(2)I_(9)device successfully established the associative learning behavior by simulating the Pavlov’s dog experiment.
维普期刊数据库