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Dual-phase coexistence enables to alleviate resistance drift in phase-change films

Journal of Semiconductors 2024年第7期45卷 55-59页

作者： Tong Wu Chen Chen Jinyi Zhu Guoxiang Wang Shixun Dai Laboratory of Infrared Materials and Devices The Research Institute of Advanced TechnologiesNingbo UniversityNingbo 315211China Institute of Ocean Engineering Ningbo UniversityNingbo 315211China

The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.

关键词： phase change films X-ray methods resistance drift optical band gap

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Multi-level phase-change memory with ultralow power consumption and resistance drift

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Science Bulletin 2021年第21期66卷 2217-2224,M0004页

作者： Bin Liu Kaiqi Li Wanliang Liu Jian Zhou Liangcai Wu Zhitang Song Stephen R.Elliott Zhimei Sun School of Materials Science and Engineering Beihang UniversityBeijing 100191China Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary ScienceBeihang UniversityBeijing 100191China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Science Donghua UniversityShanghai 201620China Department of Chemistry University of CambridgeCambridge CB21EWUK Physical and Theoretical Chemistry Laboratory University of OxfordOxford OX13QZUK

By controlling the amorphous-to-crystalline relative volume,chalcogenide phase-change memory materials can provide multi-level data storage(MLS),which offers great potential for high-density storageclass memory and neuro-inspired ***,this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase(‘‘drift")in the amorphous phase,which limits the number of attainable storage ***,we report a new type of MLS system in yttriumdoped antimony telluride,utilizing reversible multi-level phase transitions between three states,i.e.,amorphous,metastable cubic and stable hexagonal crystalline phases,with ultralow power consumption(0.6–4.3 p J)and ultralow resistance drift for the lower two states(power-law exponent<0.007).The metastable cubic phase is stabilized by yttrium,while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb ***,the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high *** study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations.

关键词： Phase-change memory Multi-level storage Antimony telluride Yttrium doping Power consumption resistance drift

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Toward single element phase-change memory

Toward single element phase-change memory

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第二届海峡两岸功能材料科技与产业峰会（2015）

作者： Tsung-Shune Chin Yung-Chin Chu DMSE Feng Chia University DMSE Tsing Hua University

We disclose herewith a non-volatile phase-change memory(PCM)made of just one element,antimony,to alleviate problems encountered in multi-element PCM,such as Ge2Sb2Te5(225).The problems mainly reside on degradations after a long-term set-reset operation of the memory cells,such as composition variation,resistance drifting,delaminated multi-layers,among *** herewith is the performance of memory cells made of

关键词： phase-change memory PCM ultra-thin Sb film resistance drift non-volatile electronic memory

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