Multi-level phase-change memory with ultralow power consumption and resistance drift

作     者：Bin Liu Kaiqi Li Wanliang Liu Jian Zhou Liangcai Wu Zhitang Song Stephen R.Elliott Zhimei Sun 刘宾;李开旗;刘万良;周健;吴良才;宋志棠;Stephen R.Elliott;孙志梅

作者机构：School of Materials Science and EngineeringBeihang UniversityBeijing 100191China Center for Integrated Computational Materials EngineeringInternational Research Institute for Multidisciplinary ScienceBeihang UniversityBeijing 100191China State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of ScienceDonghua UniversityShanghai 201620China Department of ChemistryUniversity of CambridgeCambridge CB21EWUK Physical and Theoretical Chemistry LaboratoryUniversity of OxfordOxford OX13QZUK 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2021年第66卷第21期

页      面：2217-2224,M0004页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：the National Key Research and Development Program of China(2017YFB0701700) the National Natural Science Foundation of China(51872017) the High-Performance Computing(HPC)Resources at Beihang University 

主　　题：Phase-change memory Multi-level storage Antimony telluride Yttrium doping Power consumption Resistance drift 

摘      要：By controlling the amorphous-to-crystalline relative volume,chalcogenide phase-change memory materials can provide multi-level data storage(MLS),which offers great potential for high-density storageclass memory and neuro-inspired ***,this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase(‘‘drift)in the amorphous phase,which limits the number of attainable storage ***,we report a new type of MLS system in yttriumdoped antimony telluride,utilizing reversible multi-level phase transitions between three states,i.e.,amorphous,metastable cubic and stable hexagonal crystalline phases,with ultralow power consumption(0.6–4.3 p J)and ultralow resistance drift for the lower two states(power-law exponent0.007).The metastable cubic phase is stabilized by yttrium,while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb ***,the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high *** study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations.