Dual-phase coexistence enables to alleviate resistance drift in phase-change films

作     者：Tong Wu Chen Chen Jinyi Zhu Guoxiang Wang Shixun Dai Tong Wu;Chen Chen;Jinyi Zhu;Guoxiang Wang;Shixun Dai

作者机构：Laboratory of Infrared Materials and DevicesThe Research Institute of Advanced TechnologiesNingbo UniversityNingbo 315211China Institute of Ocean EngineeringNingbo UniversityNingbo 315211China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2024年第45卷第7期

页      面：55-59页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 081201[工学-计算机系统结构] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：financially supported by the National Natural Science Foundation of China(Grant No.62074089) the Natural Science Foundation of Ningbo City,China(Grant No.2022J072) the Youth Science and Technology Innovation Leading Talent Project of Ningbo City,China(Grant No.2023QL005) sponsored by the K.C.Wong Magna Fund in Ningbo University 

主　　题：phase change films X-ray methods resistance drift optical band gap 

摘      要：The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.