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A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

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Journal of Semiconductors 2009年第5期30卷 43-46页

作者：苏适廖小平 Key Laboratory of MEMS of Ministry of Education Southeast University

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

关键词： MEMS microwave power sensor GaAs MMIC technology power handling

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A novel symmetrical microwave power sensor based on MEMS technology

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Journal of Semiconductors 2009年第5期30卷 50-54页

作者：王德波廖小平 Key Laboratory of MEMS of Ministry of Education Southeast University

A novel symmetrical microwave power sensor based on MEMS technology is presented. In this power sensor, the left section inputs the microwave power, while the fight section inputs the DC power. Because of its symmetrical structure, this power sensor provides more accurate microwave power measurement capability without mismatch uncertainty and temperature drift. The loss caused by the microwave signal is simulated in this power sensor. This power sensor is designed and fabricated using GaAs MMIC technology. And it is measured in the frequency range up to 20 GHz with an input power in the 0-80 mW range. Over the 80 mW dynamic range, the sensitivity can achieve about 0.2 mV/mW. The difference between the input power in the two sections is below 0.1% for an equal output voltage. In short, the key aspect of this power sensor is that the microwave power measurement is replaced with a DC power measurement.

关键词： symmetrical MEMS GaAs MMIC power sensor

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Application of the thermoelectric MEMS microwave power sensor in a power radiation monitoring system

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Journal of Semiconductors 2016年第8期37卷 60-62页

作者：高波杨晶蒋思王德波 Nanjing University of Posts and Telecommunications Nanjing 210003 China

A power radiation monitoring system based on thermoelectric MEMS microwave power sensors is studied. This monitoring system consists of three modules： a data acquisition module, a data processing and display module, and a data sharing module. It can detect the power radiation in the environment and the date information can be processed and shared. The measured results show that the thermoelectric MEMS microwave power sensor and the power radiation monitoring system both have a relatively good linearity. The sensitivity of the thermoelectric MEMS microwave power sensor is about 0.101 mV/mW, and the sensitivity of the monitoring system is about 0.038 V/mW. The voltage gain of the monitoring system is about 380 times, which is relatively consistent with the theoretical value. In addition, the low-frequency and low-power module in the monitoring system is adopted in order to reduce the electromagnetic pollution and the power consumption, and this work will extend the application of the thermoelectric MEMS microwave power sensor in more areas.

关键词： thermoelectric MEMS power sensor power radiation monitoring system

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Optimization of Thermoelectric Microwave power sensors Based on Thin-Membrane Structure

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Chinese Journal of Electronics 2015年第4期24卷 884-888页

作者： WANG Debo GAO Bo ZHAO Jiang ZHANG Yi GUO Yanyan Nanjing University of Posts and Telecommunication

In this work, the thermal conduction property of thermoelectric microwave power sensors is researched. The fabrication of the thermoelectric microwave power sensor consists of a front side and a back side processing using Ga As Monolithic microwave integrated circuit(MMIC) process and MEMS technology. An isolation structure on the front side is designed to prevent the thermal conduction from the resistor to the Coplanar waveguide(CPW). A thin-membrane on the back side is designed to prevent the thermal conduction from the resistor to the substrate. For the microwave power sensor without an isolation structure, the sensitivity is about 0.138, 0.136,0.132, 0.115 and 0.111 m V/m W at 8, 9, 10, 11 and 12 GHz,respectively. For the microwave power sensor with an isolation structure, the sensitivity is about 0.142, 0.139, 0.135,0.117 and 0.115 m V/m W at 8, 9, 10, 11 and 12 GHz, respectively. As a result, the higher thermal conduction efficiency and the higher sensitivity are obtained for the optimized thermoelectric microwave power sensors.

关键词： Thermal conduction power sensor Ga As Monolithic microwave integrated circuit(MMIC) Microelectromechanical systems(MEMS)