A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

作     者：苏适 廖小平 

作者机构：Key Laboratory of MEMS of Ministry of EducationSoutheast University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第5期

页      面：43-46页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程] 

基　　金：supported by the National Natural Science Foundation of China(No.60676043) the National High Technology Research and Development Program of China(No.2007AA04Z328) 

主　　题：MEMS microwave power sensor GaAs MMIC technology power handling 

摘      要：This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.