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mc-Si:H/c-Si solar cell prepared by PEcvd

Rare Metals 2006年第Z1期25卷 176-179页

作者： XU Ying LIAO Xianbo DIAO Hongwei Li Xudong ZENG Xiangbo LIU Xiaoping WANG Minhua WANG Wenjing State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China

Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer′s thickness of emitter layer. The highest of Voc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the Voc of 549.8 mV, Jsc of 32.19 mA·cm-2 and the cell′s area of 1 cm2.

关键词： solar cell hetero-junction amorphous silicon plasma enhanced cvd

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Influence of plasma condition on carbon nanotube growth by rf-PEcvd

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Nano-Micro Letters 2010年第1期2卷 37-41页

作者： Y.H.Man Z.C.Li Z.J.Zhang Advanced Materials Laboratory Department of Materials Science and Engineering Tsinghua University

Carbon nanotubes(CNTs)have been synthesized from Ar-CH_4 mixtures using rf-plasma enhanced chemical vapor deposition(rf-PEcvd)at *** gases such as H_2 and NH_3 were found unnecessary for carbon nanotube formation compared to thermal *** relationship between the growth of CNTs and the plasma condition in PEcvd has been investigated by in situ self bias *** conditions were controlled by changing the interelectrode distance,rf power and the applied substrate negative *** increasing the interelectrode distance and rf power,the spatial density of CNTs was on a rise as a result of the increase in ions density and self *** the applied substrate negative bias increased,the spatial density of CNTs decreased possibly due to the positive ions over bombarding effect.

关键词： Carbon nanotube plasma enhanced cvd plasma condition

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