mc-Si:H/c-Si solar cell prepared by PECVD
mc-Si:H/c-Si solar cell prepared by PECVD作者机构:State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China State Laboratory for Surface Physics Institute of Semiconductors and Center for Condensed Matter Physics Chinese Acad-bmy of Sciences Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China
出 版 物:《Rare Metals》 (稀有金属(英文版))
年 卷 期:2006年第25卷第z1期
页 面:176-179页
核心收录:
学科分类:0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学]
基 金:This project was financially supported by the National Science Foundation of Beijing China (No.04D063)
主 题:solar cell hetero-junction amorphous silicon plasma enhanced CVD
摘 要:Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer′s thickness of emitter layer. The highest of Voc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the Voc of 549.8 mV, Jsc of 32.19 mA·cm-2 and the cell′s area of 1 cm2.