Influence of plasma condition on carbon nanotube growth by rf-PECVD

作     者：Y.H.Man Z.C.Li Z.J.Zhang 

作者机构：Advanced Materials Laboratory Department of Materials Science and Engineering Tsinghua University 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2010年第2卷第1期

页      面：37-41页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financial support by the National Natural Science Foundation of China(grant No:10675070.50701026) the National Basic Research Program of China(973 program,2007CB936601) 

主　　题：Carbon nanotube Plasma enhanced CVD Plasma condition 

摘      要：Carbon nanotubes(CNTs)have been synthesized from Ar-CH_4 mixtures using rf-plasma enhanced chemical vapor deposition(rf-PECVD)at *** gases such as H_2 and NH_3 were found unnecessary for carbon nanotube formation compared to thermal *** relationship between the growth of CNTs and the plasma condition in PECVD has been investigated by in situ self bias *** conditions were controlled by changing the interelectrode distance,rf power and the applied substrate negative *** increasing the interelectrode distance and rf power,the spatial density of CNTs was on a rise as a result of the increase in ions density and self *** the applied substrate negative bias increased,the spatial density of CNTs decreased possibly due to the positive ions over bombarding effect.