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Synthesis,characterization of the pentacene and fabrication of pentacene field-effect transistors

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Chinese Physics B 2008年第1期17卷 281-285页

作者：陶春兰张旭辉董茂军刘一阳孙硕欧谷平张福甲张浩力 School of Physical Science and Technology Lanzhou University State Key Laboratory of Applied Organic Chemistry College of Chemistry and Chemical EngineeringLanzhou University School of Physics Hunan University of Science and Technology

A comprehensive understanding of the organic semiconductor material pentacene is meaningful for organic fieldeffect transistors （OFETs）. Thin films of pentacene are the most mobile molecular films known to date. This paper reported that the pentacene sample was successfully synthesized. The purity of pentacene is up to 95%. The results of a joint experimental investigation based on a combination of infrared absorption spectra, mass spectra （MS）, element analysis, x-ray diffraction （XRD） and atom force microscopy （AFM）. The authors fabricated OFET with the synthesized pentacene. Its field effect mobility is about 1.23 cm^2/（V·s） and on-off ratio is above 10^6.

关键词： pentacene OFETs MS XRD AFM

Introduction of F_4-TCNQ/MoO_3 layers for thermoelectric devices based on pentacene

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Chinese Physics B 2014年第9期23卷 535-538页

作者：吴双红 Ryosuke Nakamichi Masatsugu Taneda 张其胜 Chihaya Adachi Life BEANS Center Kyushu Bio Electromechanical Autonomous Nano-Systems(BEANS) Laboratory744 MotookaNishi-kuFukuoka 819-0395Japan Center for Future Chemistry Kyushu University744 MotookaNishi-kuFukuoka 819-0395Japan School of Optoelectronic Information University of Electronic Science and Technology of China (UESTC) Center for Organic Photonics and Electronics Research (OPERA) and International Institute for Carbon Neutral Energy Research (WPI-I2CNER) Kyushu University744 MotookaNishiFukuoka 819-0395Japan

We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane （F4-TCNQ） and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.

关键词： thermoelectrics pentacene MoO3 contact resistance

The effect of annealing temperature and film thicknesson the phase of pentacene on the p^+-Si substrate

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Chinese Physics B 2008年第10期17卷 3822-3826页

作者：袁广才徐征赵谡玲张福俊黄金昭黄金英田雪雁徐叙瑢 Institute of Optoelectronic Technology Beijing Jiaotong University ChinaKey Laboratory of Luminescence and Optical Information (Beijing Jiaotong University) Ministry of Education

This paper investigates the morphology and crystallization properties of the two crystalline phases of pentacene grown by thermal evaporation on p^＋-Si substrates at room temperature by the methods of atomic force microscopy and x-ray diffraction. This kind of substrate induces a thin film phase and a triclinic phase which are formed directly onto p^＋-Si substrates and constitute a layer consisting of faceted grains with a step height between terraces of 15.8A（1A=0.1 nm） and 14.9A, respectively. Above the critical thickness of the thin film phase, lamellar structures are found with an increasing fraction with the increase of the film thickness. When the film thickness is fixed, the fraction of lamellar structures increases with the increase of annealing temperature. These lamellar structures are identified as the second phase with a interplanar distance of 14.9A corresponding to the pentacene triclinic phase. Furthermore, the thin film phase consisting of several micrometre sized uniformly oriented grains at an annealing temperature of less than 80℃ and a deposition rate of 0.6A/s is observed.

关键词： pentacene morphology crystalline phase thin-film transistors

Structures and Nonlinear Optical Properties of Lithium-adsorbed Polycyclic π-Conjugated pentacene Systems

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Chemical Research in Chinese Universities 2015年第2期31卷 261-269页

作者： LI Shaochen YU Guangtao CHEN Wei HUANG Xuri State Key Laboratory of Theoretical and Computational Chemistry Institute of Theoretical Chemistry Jilin University Changchun 130021 P. R. China

Structures and nonlinear optical（NLO） properties of eleven new Lin-Pm（n=1-5） species were investigated in detail with the help of ab initio computation, in which one to the maximum five Li atoms are doped over the polycyclic π-conjugated pentacene. These Li-doped pentacene systems exhibit large adsorption energies（ca. 107.0--141.3 kJ/mol） and considerable first hyperpolarizabilities（even up to 4.1×10^4 a.u.）, where the number of Li atoms, the doping site, and the distance between the neighboring Li atoms have important impacts on the flo value. In the doped pentacene systems with less Li atoms（one or two）, the improvement of β10 value can be attributed to the simple transfer of the charge from Li atom to pentacene. Differently, doped more Li atoms（three to five） can cause not only charge transfer but also excess electron, and this cooperation can endow the doped systems with the much larger first hyperpolarizabilities. These fascinating findings are advantageous for the design of new NLO materials based on the intriguing polycyclic π-conjugated systems.

关键词： Alkali atom pentacene The first hyperpolarizability Charge transfer Excess electron

利用不同阴极缓冲层来改善pentacene/C_(60)太阳能电池的性能

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物理学报 2011年第5期60卷 796-801页

作者：刘瑞徐征赵谡玲张福俊曹晓宁孔超曹文喆龚伟北京交通大学发光与光信息技术教育部重点实验室北京交通大学光电子技术研究所北京100044 榆林职业技术学院神木校区神木县职业技术教育中心神木县719300 中国科学院电工研究所太阳能热利用及光伏系统重点实验室北京100190

制备了结构为ITO/pentacene/C60/Al的双层光伏电池器件,在C60/Al界面插入了常用的缓冲层材料bathocuproine(BCP)作为阴极缓冲层,通过优化BCP层的厚度来提高电池的性能并研究了阴极缓冲层的作用机理.实验发现,BCP厚度为10nm时器件的效率... 详细信息

制备了结构为ITO/pentacene/C60/Al的双层光伏电池器件,在C60/Al界面插入了常用的缓冲层材料bathocuproine(BCP)作为阴极缓冲层,通过优化BCP层的厚度来提高电池的性能并研究了阴极缓冲层的作用机理.实验发现,BCP厚度为10nm时器件的效率最高,为0.46.在此基础上,利用bathophenanthroline(Bphen)和3,4,9,10-Perylenetetracarb-oxylicdianhydride(PTCDA)材料取代BCP,分别研究了缓冲层材料电子迁移率以及光吸收特性对器件性能的影响.在使用电子迁移率比BCP高两个数量级的Bphen材料作为缓冲层后,电池效率提高到了0.56.而当使用在可见光区有较强光吸收的PTCDA材料作为缓冲层时,可以起到增加电池光吸收的作用,电池短路电流提高至5.97mA/cm2,效率达0.87.

关键词：有机太阳能电池 pentacene C60 缓冲层

Influence of Temperature and pentacene Thickness on the Electrical Parameters in Top Gate Organic Thin Film Transistor

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Advances in Materials Physics and Chemistry 2017年第3期7卷 85-98页

作者： Abdoul Kadri Diallo El Hadji Babacar Ly Diene Ndiaye Diouma Kobor Marcel Pasquinelli Abdou Karim Diallo Laboratoire de Chimie et de Physique des Materiaux(LCPM) Universite Assane Seck de ZiguinchorZiguinchorSenegal Departement de physique appliquee Universite de Gaston BergerSaint LouisSenegal Aix Marseille Universite Domaine Universitaire de Saint JeromeMarseilleFrance

In this contribution, we report on the effect of pentacene thickness and temperature on the performance of top gate transistors. We first investigated the temperature dependence of the transport properties in the temperature range of 258 K - 353 K. The electrical characteristics showed that the threshold voltage (VT) and the onset voltage (Von) remain unchanged. However, the subthreshold current (Ioff), the on-current (Ion) and the field effect mobility (μ) are highly affected with a slight deterioration of subthreshold slope. We observed Arrhenius-like behavior suggesting a thermally activated mobility with an activation energy EA = 68 meV. Moreover the dependence of the charge carrier mobility on the organic semiconductor thickness has also been studied. The mobility decreased as the pentacene thickness increases whereas the threshold voltage and Ioff current remain minimally affected. In order to understand the transport properties and in view to put in light morphology peculiarities of pentacene, AFM images were performed. It turns out that the pentacene grain sizes are smaller and disorganized as the film thickness increases, and charge carriers are more prone to be trapped, leading to decrease the field effect mobility and the Ion current. The devices were also tested under bias stress and the transistors with low thicknesses exhibited a relatively good electrical stability compared to those with high pentacene thicknesses. This work points out the influence of temperature, semiconductor thickness and bias stress effect on the device performance and stability of transistor using top gate configuration.

关键词： pentacene Organic Transistor Top Gate Thin Film Transistor Bias Stress Parylene

Remote-Plasma-Assisted Deposition of pentacene Layer Using Atomic-Hydrogen

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Journal of Crystallization Process and Technology 2014年第1期4卷 14-19页

作者： Satoshi Yamauchi Takatoshi Minakuchi Miyuki Onodera Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan

pentacene thin layers were deposited on Si with the native oxide at 80°C by remote-plasma-assisted deposition (RPAD) using hydrogen-plasma cell to supply atomic hydrogen radicals. The deposition rate was increased by RPAD comparing to that by non-excited hydrogen gas supply whereas thermal evaporation rate of pentacene from crucible was same in the both process. DFM and XRD studies showed the grain laterally grew in the thin film phase with the size above 10 μm by RPAD. First-principles molecular orbital calculations suggested pentacene is evaporated from crucible as the trimer or larger cluster but atomic hydrogen penetrated into the cluster enhances cracking of pentacene clusters to the monomer.

关键词： Remote-Plasma-Assisted Deposition pentacene Hydrogen Plasma Atomic Hydrogen

Electrical Instability in pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

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Journal of Applied Mathematics and Physics 2016年第7期4卷 1202-1209页

作者： Abdou Karim Diallo Abdoul Kadri Diallo Diouma Kobor Marcel Pasquinelli Departement de Physique Appliquée Université de Gaston Berger Saint Louis Sénégal Laboratoire de Chimie et de Physique des Matériaux (LCPM) Université Assane Seck de Ziguinchor Ziguinchor Sénégal Aix Marseille Université Domaine Universitaire de Saint Jér&ocircme Marseille France

This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (VT), subthreshold slope (S), mobility (μ), onset voltage (Von) and Ion/Ioff ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the μ, Ioff current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.

关键词： Organic Transistor Mylar Lamination pentacene Bias Stress

Characteristics of Gamma-Ray Irradiated pentacene Organic Thin Film Field Effect Transistors

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Characteristics of Gamma-Ray Irradiated Pentacene Organic Th...