Characteristics of Gamma-Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors
作者单位：Department of Precision MachineryCollege of Science and TechnologyNihon University Japan Atomic Energy Agency
会议名称：《The 1st International Congress on Advanced Materials 2011》
会议日期：2012年
学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
关 键 词：Co60 gamma-ray radiation damage pentacene SiO2 OTFT UV-light
摘 要：P-channel pentacene field effect transistors with a Si/SiO 2 /pentacene/Au structure were fabricated, and were gamma-ray irradiated with a Co 60 source. The changes of the drain current I D vs. source/drain voltage V SD (I D - V SD ) characteristics were measured after every 200 Gy in silicon (Gy Si ) irradiations up to the total dose of 1200 Gy Si . The drain current I D continuously decreased to less than 10 % of that before irradiation after 1200 Gy Si irradiation. The threshold voltage V th continuously decreased up to 800 Gy Si , started to saturate above 800 Gy Si, and recovered above 1000 Gy Si . The mobility μ continued to decrease up to 1200 Gy Si . Those behaviors were explained by accumulation of positive trapped charge within the gate insulator SiO 2 near the interface, continuous increase of interface traps near the interface between the SiO 2 and pentacene, and build up of electrons in the channel regions. These behaviors were discussed in comparisons with previously reported results on ultraviolet (UV) light irradiation experiments on similarly structured pentacene-based transistors.