Introduction of F_4-TCNQ/MoO_3 layers for thermoelectric devices based on pentacene

作     者：吴双红 Ryosuke Nakamichi Masatsugu Taneda 张其胜 Chihaya Adachi 

作者机构：Life BEANS Center KyushuBio Electromechanical Autonomous Nano-Systems(BEANS) Laboratory744 MotookaNishi-kuFukuoka 819-0395Japan Center for Future ChemistryKyushu University744 MotookaNishi-kuFukuoka 819-0395Japan School of Optoelectronic InformationUniversity of Electronic Science and Technology of China (UESTC) Center for Organic Photonics and Electronics Research (OPERA) and International Institute for Carbon Neutral Energy Research (WPI-I2CNER)Kyushu University744 MotookaNishiFukuoka 819-0395Japan 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第9期

页      面：535-538页

核心收录：

学科分类：081704[工学-应用化学] 08[工学] 0817[工学-化学工程与技术] 

基　　金：supported by the New Energy and Industrial Technology Development Organization(NEDO) the Funding Program for World-Leading Innovative R&D on Science and Technology(FIRST) the International Institute for Carbon Neutral Energy Research(WPI-I2CNER)sponsored by MEXT 

主　　题：thermoelectrics pentacene MoO3 contact resistance 

摘      要：We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane （F4-TCNQ） and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.