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Analysis of Dark Signal Degradation Caused by 1 MeV Neutron irradiation on Backside-Illuminated CMOS Image Sensors

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Chinese Journal of Electronics 2021年第1期30卷 180-184页

作者： LIU Bingkai LI Yudong WEN Lin ZHOU Dong FENG Jie ZHANG Xiang CAI Yulong FU Jing GUO Qi Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences Xinjiang Key Laboratory of Electronic Information Material and Device University of Chinese Academy of Sciences

The purpose of this work is to investigate the influence of the epitaxial layer thickness of Backside-illuminated CMOS image sensors（BSI CISs） on dark signal behaviors. BSI CISs with the high quantum efficiency and sensitivity were irradiated by 1 MeV neutron up to the fluences of 10;cm;. The displacement damage induced variations of the mean dark signal,Dark signal nonuniformity（DSNU）, dark signal spikes and Random telegraph signal（RTS） on the different epitaxial layer thicknesses are analyzed. The experimental results show that there is no obvious correlation between the degradations of dark signal parameters and the epitaxial layer thickness, suggesting that the electric-optical performance of BSI CISs can be improved by optimizing the epitaxial layer thickness.

关键词： Backside-illuminated CMOS image sensors Dark signal behaviors Displacement damage effects Neutron irradiation

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after Neutron irradiation

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Chinese Physics B 2018年第3期27卷 515-519页

作者：潘霄宇郭红霞罗尹虹张凤祁丁李利 State Key Laboratory of Intense Pulsed irradiation Simulation and Effect Northwest Institute of Nuclear Technology

In our previous studies, we have proved that Neutron irradiation can decrease the single event latch-up （SEL） sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset （MCU） is the parasitic bipolar amplification, it bring us to study the impact of Neutron irradiation on the SRAM＇s MCU sensitivity. After the neutron experiment, we test the devices＇ function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices＇ MCU sensitivity pre- and post-neutron-irradiation. Unfortunately, Neutron irradiation makes the MCU phenomenon worse. Finally, we use the electric static discharge （ESD） testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.

关键词： displacement damage Neutron irradiation multiple cell upset （MCU） parasitic bipolar amplifica- tion

Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

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Chinese Physics B 2012年第3期21卷 360-364页

作者：吕玲张进成薛军帅马晓华张伟毕志伟张月郝跃 School of Microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University

A1GaN/GaN high electron mobility transistors （HEMTs） were exposed to 1 MeV Neutron irradiation at a neutron ftuence of 1 × 10^15 cm-2. The dc characteristics of the devices, such as the drain saturation current and the maximum transconductance, decreased after Neutron irradiation. The gate leakage currents increased obviously after Neutron irradiation. However, the rf characteristics, such as the cut-off frequency and the maximum frequency, were hardly affected by Neutron irradiation. The A1GaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism. It is shown in the Hall measurements and capacitance voltage tests that the mobility and concentration of two-dimensional electron gas （2DEG） decreased after Neutron irradiation. Tbere was no evidence of the full-width at half-maximum of X-ray diffraction （XRD） rocking curve changing after irradiation, so the dislocation was not influenced by Neutron irradiation. It is concluded that the point defects induced in A1GaN and GaN by Neutron irradiation are the dominant mechanisms responsible for performance degradations of A1GaN/GaN HEMT devices.

关键词： Neutron irradiation A1GaN/GaN high electron mobility transistor heterojunction de- fects

Low temperature testing and Neutron irradiation of a swept charge device on board the HXMT satellite

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Chinese Physics C 2012年第10期36卷 991-995页

作者：王于仨陈勇徐玉朋杨彦佶崔苇苇李茂顺刘晓艳王娟韩大炜陈田祥李承奎霍嘉李正伟李炜胡渭张艺陆波朱玥刘琰吴帝孙庆荣张子良 Key Laboratory for Particle Astrophysics Institute of High Energy Physics Chinese Academy of Sciences (CAS) College of Physics Jilin University School of Physical Science and Technology Yunnan University Beijing University of Chemical Technology

We present the low temperature testing of an SCD detector, investigating its performance such as readout noise, energy resolution at 5.9 keV and dark current. The SCD’s performance is closely related to temperature, and the temperature range of 80℃ to 50℃ is the best choice, where the FWHM at 5.9 keV is about 130 eV. The influence of the Neutron irradiation from an electrostatic accelerator with fluence up to 1 × 109 cm-2 has been examined. We find the SCD is not vulnerable to Neutron irradiation. The detailed operations of the SCD and the test results of low temperature are reported, and the results of Neutron irradiation are discussed.

关键词： SCD HXMT energy resolution readout noise Neutron irradiation

The effects of fast Neutron irradiation on oxygen in Czochralski silicon

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Chinese Physics B 2009年第1期18卷 293-297页

作者：陈贵锋阎文博陈洪建李兴华李养贤 School of Material Science and Engineering Hebei University of Technology

The effects of fast Neutron irradiation on oxygen atoms in Czochralski silicon （CZ-Si） are investigated systemically by using Fourier transform infrared （FTIR） spectrometer and positron annihilation technique （PAT）. Through isochronal annealing, it is found that the trend of variation in interstitial oxygen concentration （[Oi]） in fast neutrons irradiated CZ-Si fluctuates largely with temperature increasing, especially between 500 and 700℃. After the CZ-Si is annealed at 600℃, the V4 appearing as three-dimensional vacancy clusters causes the formation of the molecule-like oxygen clusters, and more importantly these dimers with small binding energies （0.1-1.0eV） can diffuse into the Si lattices more easily than single oxygen atoms, thereby leading to the strong oxygen agglomerations. When the CZ-Si is annealed at temperature increasing up to 700℃, three-dimensional vacancy clusters disappear and the oxygen agglomerations decompose into single oxygen atoms （O） at interstitial sites. Results from FTIR spectrometer and PAT provide an insight into the nature of the [Oi] at temperatures between 500 and 700℃. It turns out that the large fluctuation of [Oi] after short-time annealing from 500 to 700℃ results from the transformation of fast Neutron irradiation defects.

关键词： Neutron irradiation irradiation defects FTIR spectrometer positron lifetime

Neutron irradiation effects on mechanical properties of ITER specification tungsten

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Tungsten 2021年第4期3卷 415-433页

作者： Dmitry Terentyev Chih-Cheng Chang Chao Yin AZinovev Xin-Fu He Structural Materials Group Institute of Nuclear Materials ScienceBelgian Nuclear Research Center2400 MolBelgium Institute of Mechanics Materials and Civil EngineeringUCLouvain1348 Ottignies-Louvain-la-NeuveBelgium School of Nuclear Science and Technology University of Science and Technology of ChinaHefei 230026China China Institute of Atomic Energy Beijing 102413China

In this contribution,we present the results of recent Neutron irradiation campaign performed in the material test reactor BR2(Belgium)on pure tungsten.We have applied various irradiation conditions and sample geometry to assess the effect of neu-tron irradiation on hardness,bending,tensile and fracture mechanical properties.The investigated material is a commercially pure tungsten plate fabricated according to the international thermonuclear experimental reactor(ITER)specification for the application in the divertor plasma-facing components.The Neutron irradiation covers a large span of temperatures and damage doses,ranging from 600 to 1200°C and 0.1-1 dpa.The obtained mechanical properties were analyzed to deduce the shift of the ductile to brittle transition temperature(DBTT)applying bending,tensile and fracture toughness-testing procedures.Then,a correlation of the fracture toughness with the change of the hardness was established.The obtained results are compared with the already published results on another ITER specification grade produced in the form of a rod.The presented and discussed results show that the performance of the compared grades in terms of the irradiation-induced embrittlement is similar,and that the irradiation in the high-temperature region(600-800°C)causes a considerable DBTT shift already at 0.2-0.5 dpa.

关键词： Tungsten Neutron irradiation Embrittlement

Comparison of Neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT

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Rare Metals 2003年第1期22卷 69-74页

作者： MENGXiangti WANGRuipian KANGAiguo WANGJilin JIAHongyong CHENPe InstituteofMicroelectronics TsinghuaUniversityBeijing100084China InstituteofNuclearEnergyTechnology TsinghuaUniversityBeijing100084China

The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alter Neutron irradiation, the collector currentI_c and the current gain beta decrease, and the base current I_b increases generally for SiGe HBT.The higher the Neutron irradiation fluence is, the larger I_b increases. For conventional Si BJT,I_c and I_b increase as well as beta decreases much larger than SiGe HBT at the same fluence. It isshown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance thanSi BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.

关键词： semiconductor technology SiGe HBT Neutron irradiation Si BJT electrical performance

Determination of Neutron irradiation-Induced Phosphorus Segregation on Grain Boundaries in a P-doped 2.25Cr1Mo Steel

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Journal of Materials Science & Technology 2004年第1期20卷 81-85页

作者： ShenhuaSONG R.G.Faulkner P.E.J.Flewitt DongdongSHEN JingLIU ZexiYUAN SchoolofMaterialsandMetallurgy WuhanUniversityofScienceandTechnologyWuhan430081China InstituteofPolymerTechnologyandMaterialsEngineering LoughboroughUniversityLoughboroughLeicestershireLEll3TUUK BerkeleyCentre BNFLMagnoxGenerationBerkeleyGloucestershireGL139PBUK

irradiation-induced impurity segregation to grain boundaries is one of the important radiation effects on materials. For this reason, phosphorus segregation to prior austenite grain boundaries in a P-doped 2.25Cr1Mo steel subjected to Neutron irradiation is examined using field emission gun scanning transmission electron microscopy (FEGSTEM) with energy dispersive X-ray microanalysis (EDX). The steel samples are irradiated around 270 and 400℃, respectively. The irradiation dose rate and dose are -1.05×10-8 dpa/s and -0.042 dpa respectively for 270℃ irradiation, and 1.7×10-8 dpa/s and 0.13 dpa respectively for 400℃ irradiation. The FEGSTEM results indicate that there is no apparent phosphorus segregation during 270℃ irradiation but there is some during 400℃ irradiation.

关键词： Neutron irradiation Segregation Grain boundary Phosphorus

Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller

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Chinese Physics B 2010年第6期19卷 429-436页

作者：金晓明范如玉陈伟林东生杨善潮白小燕刘岩郭晓强王桂珍 Department of Engineering Physics Tsinghua University Northwest Institute of Nuclear Technology

This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments： neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the Neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.

关键词： total ionizing dose Neutron irradiation synergistic effect microcontroller