Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

作     者：吕玲 张进成 薛军帅 马晓华 张伟 毕志伟 张月 郝跃 

作者机构：School of MicroelectronicsKey Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第3期

页      面：360-364页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the Major Program and Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033) 

主　　题：neutron irradiation A1GaN/GaN high electron mobility transistor heterojunction de- fects 

摘      要：A1GaN/GaN high electron mobility transistors （HEMTs） were exposed to 1 MeV neutron irradiation at a neutron ftuence of 1 × 10^15 cm-2. The dc characteristics of the devices, such as the drain saturation current and the maximum transconductance, decreased after neutron irradiation. The gate leakage currents increased obviously after neutron irradiation. However, the rf characteristics, such as the cut-off frequency and the maximum frequency, were hardly affected by neutron irradiation. The A1GaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism. It is shown in the Hall measurements and capacitance voltage tests that the mobility and concentration of two-dimensional electron gas （2DEG） decreased after neutron irradiation. Tbere was no evidence of the full-width at half-maximum of X-ray diffraction （XRD） rocking curve changing after irradiation, so the dislocation was not influenced by neutron irradiation. It is concluded that the point defects induced in A1GaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of A1GaN/GaN HEMT devices.