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Zirconia quantum dots for a nonvolatile resistive random access memory device

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Frontiers of Information Technology & Electronic Engineering 2019年第12期20卷 1698-1705页

作者： Xiang-lei HE Rui-jie TANG Feng YANG Mayameen SKADHIM Jie-xin WANG Yuan PU Dan WANG State Key Laboratory of Organic-Inorganic Composites Beijing University of Chemical TechnologyBeijing 100029China MoE Key Laboratory of Advanced Technology of Materials School of Materials Science and EngineeringSouthwest Jiaotong UniversityChengdu 610031China

We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia(ZrO2) quantum dots(QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag(top)/ZrO2(active layer)/Ti(bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference(about 10 Ω), a good cycle performance(the number of cycles larger than 100), and a relatively low conversion current(about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO2 active layer. Experimental results show that the ZrO2 active layer is stacked compactly and has a low roughness(Ra=4.49 nm) due to the uniform distribution of the ZrO2 QDs. The conductive mechanism of the Ag/ZrO2/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.

关键词： Zirconia quantum dot Resistive switching memory device Spin coating

To probe the performance of perovskite memory device:defects property and hysteresis

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To probe the performance of perovskite memory device:defects...

Investigation of flux dependent sensitivity on single event effect in memory devices

第四届新型太阳能电池学术研讨会

作者： Ziqi Xu Nengxu Li Guanhaojie Zheng Qi Chen Huanping Zhou Happy Lab College of EngineeringPeking University

Hybrid organic-inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as *** with fast rise of the device performance, a current density-voltage(J-V) hysteresis originated from defects and their movement has attracted intensive attention, which renders challenges regarding stability and reliability of the novel ***, we carefully probe the defects effects in the perovskite materials and across interfaces within the device, in which the bistable conductive states are achieved for the next generation nonvolatile *** memory device shows the operate voltage as low as 0.25 V, and a decent on/off *** importantly, we correlate the defect density and hysteresis-index of different perovskite films to the corresponding memory device *** findings enrich the understanding of working mechanism of perovskite memory devices, which also benefit other organic-inorganic hybrid perovskite optoelectronics.

关键词： perovskite memory device set voltage trap density hysteresis

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Chinese Physics B 2018年第7期27卷 404-410页

作者： Jie Luo Tie-shan Wang Dong-qing Li Tian-qi Liu Ming-dong Hou You-mei Sun Jing-lai Duan Hui-jun Yao Kai Xi Bing Ye Jie Liu Institute of Modem Physics Chinese Academy of SciencesLanzhou 730000China School of Nuclear Science and Technology Lanzhou UniversityLanzhou 730000China University of Chinese Academy ofSciances Beijing 100049China

Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer （LET） of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.

关键词： ion flux single event effect GEANT4 simulation memory device

New Superionic memory devices Can Provide Clues to the Human memory Structure and to Consciousness

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Journal of Applied Mathematics and Physics 2023年第2期11卷 377-376页

作者： Hans Hermann Otto Materialwissenschaftliche Kristallographie Clausthal University of Technology Clausthal-Zellerfeld Lower Saxony Germany

Since the work of Penrose and Hameroff the possibility is discussed that the location of human memory and consciousness could be connected with tubulin microtubules. If one would use superionic nano-materials rolled up to microtubules with an electrolyte inside the formed channels mediating fast ionic exchange of protons respectively lithium ions, it seems to be possible to write into such materials whole image arrays (pictures) under the action of the complex electromagnetic spectrum that composes these images. The same material and architecture may be recommended for super-computers. Especially microtubules with a protofilament number of 13 are the most important to note. We connected such microtubules before with Fibonacci nets composed of 13 sub-cells that were helically rolled up to deliver suitable channels. Our recent Fibonacci analysis of Wadsley-Roth shear phases such as niobium tungsten oxide , exhibiting channels for ultra-fast lithium-ion diffusion, suggests to use these materials, besides super-battery main application, in form of nanorods or microtubules as effectively working superionic memory devices for computers that work ultra-fast with the complex effectiveness of human brains. Finally, we pose the question, whether dark matter, ever connected with ultrafast movement of ordinary matter, may be responsible for synchronization between interactions of human brains and consciousness.

关键词： memory device Niobium Tungsten Oxide Crystallographic Shear Lithium Intercalation Superionicity Super Battery Fibonacci Nets Fibonacci Stoichiometry Tubulin Microtubules

Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

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Chinese Physics B 2013年第9期22卷 591-594页

作者：汤振杰李荣殷江 College of Physics and Electronic Engineering Anyang Normal University School of Mathematics and Statistics Anyang Normal University Department of Materials Science and Engineering National Laboratory of Solid State MicrostructuresNanjing University

A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.

关键词： composition modulated films memory device charge trap atomic layer deposition

Synthesis of halide perovskite microwires via methylammonium cations reaction

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Frontiers of Materials Science 2020年第3期14卷 332-340页

作者： Wei Wang Jinhui Gong Siyu Guo Lin Jiang Shaochao Liu Li Wang Department of Materials Science and Engineering Nanchang UniversityNanchang330031China

Low-dimensional halide perovskites(HPs)have received considerable attention in recent years due to their novel physical properties such as compositional flexibility,high quantum yield,quantum size effects and superior charge *** we show room temperature solution synthesis of 1D organic-inorganic lead bromide perovskite microwires(MWs).Our method uses acetone as a reactant,and when CH3NH3PbBr3 is immersed,acetone reacts with CH3NH3+cations in the CH3NH3PbBr3 single crystal by the dehydration *** reaction generates a large(CH3)2C=NHCH3+A-site which cannot be accommodated by the cuboctahedron formed by the corner-sharing[PbBr6]4−octahedral,leading to the transition of corner-sharing octahedra to face-sharing triangular prism and the crystal structure transformation from 3D to *** formation process of(CH3)2C=NHCH3PbBr3 MWs does not involve any ligands,templates or catalysts.A two-terminal memory device was constructed using the(CH3)2C=NHCH3PbBr3 MWs,showing great potential of the method in fabrication of electronic and optoelectronic devices.

关键词： organic-inorganic halide perovskite one-dimensional microwire cation reaction memory device

Resistive-switching tunability with size-dependent all-inorganic zero-dimensional tetrahedrite quantum dots

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Science China Materials 2020年第12期63卷 2497-2508页

作者： Zhiqing Wang Yueli Liu Jie Shen Wen Chen Jun Miao Ang Li Ke Liu Jing Zhou State Key Laboratory of Advanced Technology for Materials Synthesis and Processing School of Materials Science and EngineeringWuhan University of TechnologyWuhan 430070China State Key Laboratory of Silicate Materials for Architectures School of Materials Science and EngineeringWuhan University of TechnologyWuhan 430070China School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China

All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier *** this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is *** SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first *** suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS ***,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention *** 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS *** theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching *** paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.

关键词： memory device tetrahedrite quantum dots resistive-switching tunability resistance mechanism

Nonvolatile resistive switching memory properties of congo red noncovalently decorated reduced graphene oxide in polyvinyl alcohol matrix

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Nonvolatile resistive switching memory properties of congo r...