To probe the performance of perovskite memory device:defects property and hysteresis
作者单位：Happy Lab College of EngineeringPeking University
会议名称：《第四届新型太阳能电池学术研讨会》
会议日期：2017年
学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）]
关 键 词：perovskite memory device set voltage trap density hysteresis
摘 要：Hybrid organic-inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as *** with fast rise of the device performance, a current density-voltage(J-V) hysteresis originated from defects and their movement has attracted intensive attention, which renders challenges regarding stability and reliability of the novel ***, we carefully probe the defects effects in the perovskite materials and across interfaces within the device, in which the bistable conductive states are achieved for the next generation nonvolatile *** memory device shows the operate voltage as low as 0.25 V, and a decent on/off *** importantly, we correlate the defect density and hysteresis-index of different perovskite films to the corresponding memory device *** findings enrich the understanding of working mechanism of perovskite memory devices, which also benefit other organic-inorganic hybrid perovskite optoelectronics.