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Characterization of CIAE developed double-sided silicon strip detector for charged particles

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Nuclear Science and Techniques 2018年第5期29卷 98-103页

作者： Xin-Xing Xu Fanurs C.E.Teh Cheng-Jian Lin Jenny Lee Feng Yang Zhao-Qiao Guo Tian-Shu Guo Li-Jie Sun Xin-Zhi Teng Jia-Jian Liu Peng-Jie Li Peng-Fei Liang Lei Yang Nan-Ru Ma Hui-Ming Jia Dong-Xi Wang Sylvain Leblond Taras Lokotko Qing-Qing Zhao Huan-Qiao Zhang China Institute of Atomic Energy Beijing 102413China Department of Physics The University of Hong KongPokfulam RoadHong KongChina College of Physics and Technology Guangxi Normal UniversityGuilin 541004China Beijing Kelixing Photoelectric Technology Co. Ltd.Beijing 102413China

A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0.1 mm. Electrical properties and detection performances including full depletion bias voltage, reverse leakage current, rise time, energy resolution and cross talk have been studied. At a bias of 80 V, leakage current in each strip is less than 15 nA, and rise time for alpha particle at 5157 keV is approximately 15 ns on both *** energy resolutions have been achieved with0.65-0.80% for the junction strips and 0.85-1.00% for the ohmic strips. The cross talk is found to be negligible on both sides. The overall good performance of DSSD indicates its readiness for various nuclear physics experiments.

关键词： double-sided silicon strip detector P-stop Detection performance Cross talk

MOCVD derived double-sided YBa_2Cu_3O_(7-δ) films on Y_2O_3 /YSZ/CeO_2 buffered textured metal substrates

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Science China(Technological Sciences) 2014年第4期57卷 720-724页

作者： XIONG Jie ZHANG Fei XIA YuDong LIU Xin ZHAO RuiPeng ZHAO XiaoHui TAO BoWan State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China

We have successfully employed metal-organic chemical vapor deposition （MOCVD） technique to simultaneously deposit double-sided YBa2Cu3O7-δ （YBCO） films on both sides of YzO3/yttria-stabilized zirconia （YSZ）/CeO2 （YYC） buffered biaxially textured Ni-5 at.% W substrates, which is of great prospect to cut the production cost of YBCO coated conductors. X-ray diffraction analysis revealed that both sides of YBCO film were purely c-axis oriented and highly textured. The co-scan of （005） YBCO and Ф-scan of （103） YBCO yielded full width at half maximum （FWHM） values of 4.9° and 6.6° for one side of double-sided YBCO film, respectively, as well as 4.4° and 6.4° for the other side. The current transportation measurements performed on such double-sided 500 nm-thickness YBCO films showed the self-field critical current density （Jc） at 77 K of 0.6 MA/cm^2 and 1.2 MA/cm^2, respectively. Further research is in the process of exploring new solution to improve the Jc in practice.

关键词： MOCVD double-sided YBCO Jc

Continuous Deposition of double-sided Y_2O_3/YSZ/CeO_2 Buffer Layers for Coated Conductors

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稀有金属材料与工程 2011年第S3期40卷 311-314页

作者： Xia Yudong, Zhang Fei, Zhang Ning, Zhang Junfei, Chai Gang, Guo Pei, Jing Tongguo, Xiong Jie, Zhao Xiaohui, Tao Bowan, Li Yanrong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Peoples R China

In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth, dense and crack-free surface morphology. Out-of-plane, in-plane texture, and surface roughness of multi-buffer layers were improved under optimized deposition conditions. Full width at half maximum (FWHM) values of out-of-plane and in-plane were about 4° and 5.5° in 50 cm double-sided buffed template. YBa2Cu3O7-δ films with thickness of 1.2 μm were deposited on both sides of the buffed tape. Both sides showed similar critical current density, Jc (77 K, self field) as 0.8 MA/cm2 and 0.7 MA/cm2, respectively.

关键词： continuous deposition double-sided Y2O3/YSZ/CeO2 buffer layers

Comparison of the performance and dynamics of the asymmetric single-sided and symmetric double-sided vibro-impact nonlinear energy sinks with optimized designs

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International Journal of Mechanical System Dynamics 2024年第3期4卷 303-316页

作者： Petro Lizunov Olga Pogorelova Tetyana Postnikova Department of Constructive Mechanics Kyiv National University of Construction and ArchitectureKyivUkraine Research Institute of Structural Mechanics Kyiv National University of Construction and ArchitectureKyivUkraine

The operation of symmetric double-sided and asymmetric single-sided vibro-impact nonlinear energy sinks(DSVI NES and SSVI NES)is considered in this *** methodology of optimization procedures is *** is emphasized that the execution of optimization procedures is ambiguous,allows for a great deal of arbitrariness,and requires experience and intuition on the part of the *** are a lot of damper parameter sets providing similar attenuation of the primary structure(PS)*** is shown that the efficiency of such mitigation for both VI NES types with optimized parameters is ***,their dynamic behavior differs *** system with the attached DSVI NES exhibits calm dynamics with periodic motion and symmetrical bilateral impacts on both *** system with attached SSVI NES exhibits rich complex dynamics when the exciting force frequency is *** modes of different periodicity with different numbers of asymmetric impacts per cycle on the PS directly and on the obstacle alternate with various irregular regimes,namely,chaotic mode,intermittency,and crisis-induced *** regions of bilateral impacts are narrow and located near resonance;they are narrower for a system with an attached DSVI *** a system with an attached SSVI NES,there are wider areas of asymmetric unilateral impacts.

关键词： vibro-impact damper nonlinear energy sink single-sided double-sided vibrations mitigation optimization

Penetration mechanism of aluminum alloy in double-sided GTAW process

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中国有色金属学会会刊：英文版 2005年第S2期15卷 35-38页

作者：高洪明吴林董红刚 State Key Laboratory of Advanced Welding Production Technology Harbin Institute of Technology Harbin 150001 China Department of Materials Engineering Dalian University of Technology Dalian 116024 China

The penetration mechanism of aluminum alloy in double-sided gas tungsten arc welding (GTAW) process was probed by means of theoretical analysis, experimentation and numerical simulation. The results show that, firstly, the welding current goes straight through the weld zone, forms a stronger electromagnetic force field, and causes a stronger fluid flow in the weld pool. Secondly, during double-sided GTAW process, when the weld is partial penetrated, a heat-congregated zone forms between the bottoms of the two weld pools, where the temperature can increase quickly even though only a small amount of heat is input. Thirdly, the buoyancy force causes an inward flow in the bottom weld pool, which can drive the hot liquid on the surface to the bottom of the pool.

关键词： aluminum alloy double-sided GTAW process weld penetration numerical simulation

Preparation of double-sided Nanostructure Based on Soft-nanoimprinting Lithography

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Journal of Microelectronic Manufacturing 2018年第2期1卷 1-5页

作者： Man Zhang Qiling Deng Hui Pang Lifang Shi Axiu Cao Institute of Optics and Electronics Chinese Academy of SciencesChengduChina610209

double-sided nanostructure has more excellent properties in high efficiency,high yield,and high capability devices,which becomes the attention spots in nanofabrication *** proposed a very simple method to fabricate the double-sided nanostructure on polymer elastic *** using twice soft-nanoimprinting process,the same or different nanostructures array was fabricated onto the elastomeric slab *** this paper,we fabricated double-sided nanopillars array with different diameters of 200nm and *** order to expand the applications field in optical and electronic devices,metal layer could be deposited onto the substrate before imprinting nanostructure.

关键词： double-sided nanostructure elastic substrate soft-nanoimprinting lithography metal layer

Design and Fabrication of double-sided Diffraction Gratings

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Design and Fabrication of Double-sided Diffraction Gratings