Continuous Deposition of Double-sided Y_2O_3/YSZ/CeO_2 Buffer Layers for Coated Conductors

作     者：Xia Yudong, Zhang Fei, Zhang Ning, Zhang Junfei, Chai Gang, Guo Pei, Jing Tongguo, Xiong Jie, Zhao Xiaohui, Tao Bowan, Li Yanrong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China 

作者机构：Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Peoples R China 

出 版 物：《稀有金属材料与工程》 (Rare Metal Materials and Engineering)

年 卷 期：2011年第40卷第S3期

页      面：311-314页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金："863" High-Tech Project (2007AA03Z201 2009AA03Z201) 

主　　题：continuous deposition double-sided Y2O3/YSZ/CeO2 buffer layers 

摘      要：In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth, dense and crack-free surface morphology. Out-of-plane, in-plane texture, and surface roughness of multi-buffer layers were improved under optimized deposition conditions. Full width at half maximum (FWHM) values of out-of-plane and in-plane were about 4° and 5.5° in 50 cm double-sided buffed template. YBa2Cu3O7-δ films with thickness of 1.2 μm were deposited on both sides of the buffed tape. Both sides showed similar critical current density, Jc (77 K, self field) as 0.8 MA/cm2 and 0.7 MA/cm2, respectively.