Characterization of CIAE developed double-sided silicon strip detector for charged particles

作     者：Xin-Xing Xu Fanurs C.E.Teh Cheng-Jian Lin Jenny Lee Feng Yang Zhao-Qiao Guo Tian-Shu Guo Li-Jie Sun Xin-Zhi Teng Jia-Jian Liu Peng-Jie Li Peng-Fei Liang Lei Yang Nan-Ru Ma Hui-Ming Jia Dong-Xi Wang Sylvain Leblond Taras Lokotko Qing-Qing Zhao Huan-Qiao Zhang 

作者机构：China Institute of Atomic EnergyBeijing 102413China Department of PhysicsThe University of Hong KongPokfulam RoadHong KongChina College of Physics and TechnologyGuangxi Normal UniversityGuilin 541004China Beijing Kelixing Photoelectric Technology Co.Ltd.Beijing 102413China 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2018年第29卷第5期

页      面：98-103页

核心收录：

学科分类：08[工学] 0827[工学-核科学与技术] 

基　　金：supported by the National Natural Science Foundation of China(Nos.U1432246,U1632136,U1432127,11375268,11635015,and 11475263) the National Basic Research Program of China(No.2013CB834404) 

主　　题：Double-sided silicon strip detector P-stop Detection performance Cross talk 

摘      要：A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0.1 mm. Electrical properties and detection performances including full depletion bias voltage, reverse leakage current, rise time, energy resolution and cross talk have been studied. At a bias of 80 V, leakage current in each strip is less than 15 nA, and rise time for alpha particle at 5157 keV is approximately 15 ns on both *** energy resolutions have been achieved with0.65-0.80% for the junction strips and 0.85-1.00% for the ohmic strips. The cross talk is found to be negligible on both sides. The overall good performance of DSSD indicates its readiness for various nuclear physics experiments.