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Small Signal circuit model of Double Photodiodes

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Semiconductor Photonics and Technology 2004年第3期10卷 164-167,173页

作者： HANJian,zhong NiGuo-qiang MAOLu-hong Dept.ofPhotoelectron.Eng. BeijingInstituteofTechnologyBeijing100081CHN SchoolofElectron.Inform.Eng. TianjinUniversityTianjin300072CHN

The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device *** DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is *** analysis on the frequency domain of the circuit model the device has two *** has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the *** depth of the N-well and different area of the DPDs with bandwidth were *** analysis results are important to design the high speed DPDs.

关键词： Photodetector circuit model Device simulation

Small Signal Equivalent circuit model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

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Journal of Semiconductors 2002年第1期23卷 82-86页

作者：毛陆虹陈弘达梁琨唐君吴荣汉粘华郭维廉吴霞宛中国科学院半导体研究所国家集成光电子重点实验室北京100083 天津大学电子与信息工程学院天津300072

Small signal equivalent circuit model and modulation properties of vertical cavity surface emitting lasers(VCSEL's) are *** modulation properties both in analytic equation calculation and in circuit model simulation are *** analytic equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulated by using Pspice program *** results of calculation and the simulation are in good agreement with each *** is performed to testify the circuit model.

关键词： VCSEL circuit model modulation property

Setup of High Frequency circuit model for Potential Transformer Based on the Scattering Parameter

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Setup of High Frequency Circuit Model for Potential Transfor...

A Wideband circuit model of On-Chip Spiral Inductor in 0.13μm CMOS process

ICEMI'2005第七届国际电子测量与仪器学术会议

作者： Zhang Zhongyuan Liang Guishu Li Chunyan (Key Laboratory of Power System Protection and Dynamic Security Monitoring and Control under Ministry of Education North China Electric Power University Baoding 071003 Hebei Province China)

For an accurate simulation of the electromagnetic interference from primary system to the secondary system caused by VFTO through potential and current transformer(PT/CT) in GIS, a high frequency comp

关键词： VFTO ( Very Fast Transient Over-voltage ) electromagnetic interference circuit model S(scattering)- parameter potential transformer.

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A Wideband Circuit Model of On-Chip Spiral Inductor in 0.13...

Influences of Switching Jitter on the Operational Performances of Linear Transformer Drivers-Based Drivers

2009 3rd IEEE International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Liu lintao Yu mingyan Wang jinxiang Jiang ming Microelectronic Center Harbin Institute of Technology Harbin China

In this paper, a simple wideband circuit model for on-chip spiral inductors is presented. The model shows excellent agreement with measured data mostly within 4.91% across a variety of inductor geometries up to 20 GHz. The proposed model has been verified with measured results of inductors fabricated in 0.13μm CMOS process. The inductors have two dimensions: turn and inner radius. The new model accurately captures series resistance and inductance over a wide frequency range, even beyond the self-resonant frequency.

关键词： on-chip spiral inductors circuit model wideband

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Plasma Science and Technology 2012年第4期14卷 347-352页

作者：刘鹏孙凤举魏浩王志国尹佳辉邱爱慈 School of Electrical Engineering Xi'an Jiaotong University Northwest Institute of Nuclear Technology

A whole circuit model of a linear transformer drivers （LTD） module composed of 60 cavities in series was developed in the software PSPICE to study the influence of switching jitter on the operational performances of LTDs. In the model, each brick in each cavity is capable of operating with jitter in its switch. Additionally, the manner of triggering cables entering into cavities was considered. The performances of the LTD module operating with three typical cavity-triggering sequences were simulated and the simulation results indicate that switching jitter affects slightly the peak and starting time of the output current pulse. However, the enhancement in switching jitter would significantly lengthen the rise time of the output current pulse. Without considering other factors, a jitter lower than 10 ns may be necessary for the switches in the LTD module to provide output current parameters with an acceptable deviation.

关键词： linear transformer drivers (LTDs) circuit model pulsed power transmission line jitter trigger delay

modeling and optimization of the multichannel spark discharge

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Chinese Physics B 2017年第6期26卷 244-253页

作者：张志波吴云贾敏宋慧敏孙正中李应红 Science and Technology on Plasma Dynamics Laboratory Air Force Engineering University Science and Technology on Plasma Dynamics Laboratory Xi’an Jiaotong University Department of Mechanical Engineering and Aeronautics City University London

This paper reports a novel analytic model of this multichannel spark discharge, considering the delay time in the breakdown process, the electric transforming of the discharge channel from a capacitor to a resistor induced by the air breakdown, and the varying plasma resistance in the discharge process. The good agreement between the experimental and the simulated results validated the accuracy of this model. Based on this model, the influence of the circuit parameters on the maximum discharge channel number（MDCN） is investigated. Both the input voltage amplitude and the breakdown voltage threshold of each discharge channel play a critical role. With the increase of the input voltage and the decrease of the breakdown voltage, the MCDN increases almost linearly. With the increase of the discharge capacitance, the MDCN first rises and then remains almost constant. With the increase of the circuit inductance, the MDCN increases slowly but decreases quickly when the inductance increases over a certain value. There is an optimal value of the capacitor connected to the discharge channel corresponding to the MDCN. Finally, based on these results, to shorten the discharge time, a modified multichannel discharge circuit is developed and validated by the experiment. With only 6-kV input voltage, 31-channels discharge is achieved. The breakdown voltage of each electrode gap is larger than 3 kV. The modified discharge circuit is certain to be widely used in the PSJA flow control field.

关键词： multichannel discharge circuit circuit model PSJA array plasma flow control

Numerical Analysis of the Output-Pulse Shaping Capability of Linear Transformer Drivers

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Plasma Science and Technology 2011年第2期13卷 246-251页

作者：刘鹏孙风举尹佳辉邱爱慈 School of Electrical Engineering Xi'an Jiaotong University Northwest Institute of Nuclear Technology

Output-pulse shaping capability of a linear transformer driver （LTD） module under different conditions is studied, by conducting the whole circuit model simulation by using the PSPICE code. Results indicate that a higher impedance profile of the internal transmission line would lead to a wider adjustment range for the output current rise time and a narrower adjustment range for the current peak. The number of cavities in series has a positive effect on the output- pulse shaping capability of LTD. Such an improvement in the output-pulse shaping capability can primarily be ascribed to the increment in the axial electric length of LTD. For a triggering time interval longer than the time taken by a pulse to propagate through the length of one cavity, the output parameters of LTD could be improved significantly. The present insulating capability of gas switches and other elements in the LTD cavities may only tolerate a slightly longer deviation in the triggering time interval. It is feasible for the LTD module to reduce the output current rise time, though it is not useful to improve the peak power effectively.

关键词： linear transformer driver (LTD) circuit model pulsed power transmission line impedance profile trigger delay

Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

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Chinese Physics B 2014年第3期23卷 602-607页

作者：黄达吴俊杰唐玉华 State Key Laboratory of High Performance Computing National University of Defense Technology School of Computer National University of Defense Technology

With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.

关键词： resistive RAM fault tolerance resistive switching mechanism circuit model

Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate

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Chinese Journal of Electronics 2016年第4期25卷 672-677页

作者： WEI Jingting ZHANG Baijun WANG Gang Guangdong Polytechnic Institute The Open University of Guangdong School of Microelectronics State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen University

The optimal design of Ga N-based Lightemitting diode(LED) is important for its *** this work,a new three-Dimensional(3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting Ga Nbased LED grown on Si(111) substrate with different structures and electrode *** consists of resistance of Transparent conductive layer(TCL),resistance of epitaxial layer,intrinsic diodes presenting the active layer,and Al N/Si junction as which the multilayer of Al N/Si is *** results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED ***,the experimentally measured light emission uniformity agrees well with simulation *** electrical and optical characteristics of LED are obviously affected by the current distribution uniformity.

关键词： Light-emitting diodes Current distribution uniformity circuit model