Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

作     者：黄达 吴俊杰 唐玉华 Huang Da;Wu Jun-Jie;Tang Yu-Hua;State Key Laboratory of High Performance Computing, National University of Defense Technology;School of Computer, National University of Defense Technology

作者机构：State Key Laboratory of High Performance Computing National University of Defense Technology School of Computer National University of Defense Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第3期

页      面：602-607页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.60921062) 

主　　题：resistive RAM fault tolerance resistive switching mechanism circuit model 

摘      要：With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.