Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate
Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si（111） Substrate作者机构：Guangdong Polytechnic Institute The Open University of Guangdong School of MicroelectronicsState Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen University
出 版 物：《Chinese Journal of Electronics》 (电子学报(英文))
年 卷 期：2016年第25卷第4期
页 面：672-677页
核心收录：
基 金：supported by Research Program of The Open University of Guangdong(No.1318) the National Natural Science Foundation of China(No.61274039) International Sci.& Tech.Collaboration Program of Guangdong Province,China(No.2013B051000041)
主 题：Light-emitting diodes Current distribution uniformity Circuit model
摘 要：The optimal design of Ga N-based Lightemitting diode(LED) is important for its *** this work,a new three-Dimensional(3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting Ga Nbased LED grown on Si(111) substrate with different structures and electrode *** consists of resistance of Transparent conductive layer(TCL),resistance of epitaxial layer,intrinsic diodes presenting the active layer,and Al N/Si junction as which the multilayer of Al N/Si is *** results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED ***,the experimentally measured light emission uniformity agrees well with simulation *** electrical and optical characteristics of LED are obviously affected by the current distribution uniformity.
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