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Invisible vapor catalysis in graphene growth by chemical vapor deposition

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Nano Research 2024年第5期17卷 4259-4269页

作者： Xiucai Sun Xiaoting Liu Zhongti Sun Xintong Zhang Yuzhu Wu Yeshu Zhu Yuqing Song Kaicheng Jia Jincan Zhang Luzhao Sun Wan-Jian Yin Zhongfan Liu Center for Nanochemistry Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular ScienceCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Beijing Graphene Institute(BGI) Beijing 100095China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China School of Materials Science and Engineering Jiangsu UniversityZhenjiang 212013China Department of Engineering University of CambridgeCambridge CB30FAUK College of Energy Soochow Institute for Energy and Materials InnovationS(SIEMIS)Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy TechnologiesSoochow UniversitySuzhou 215006China

vapor catalysis was recently found to play a crucial role in superclean graphene growth via chemical vapor decomposition(CVD).However,knowledge of vapor-phase catalysis is scarce,and several fundamental issues,including vapor compositions and their impact on graphene growth,are ***,by combining density functional theory(DFT)calculations,an ideal gas model,and a designed experiment,we found that the vapor was mainly composed of Cui clusters with tens of *** vapor pressure was estimated to be~10^(-12)-10^(-1)1 bar under normal low-pressure CVD system(LPCVD)conditions for graphene growth,and the exposed surface area of Cui clusters in the vapor was 22-269 times that of the Cu substrate surface,highlighting the importance of vapor *** calculations show Cu clusters,represented by Cu17,have strong capabilities for adsorption,dehydrogenation,and decomposition of *** exhibit an adsorption lifetime and reaction flux six orders of magnitude higher than those on the Cu surface,thus providing a sufficient supply of active C atoms for rapid graphene growth and improving the surface cleanliness of the synthesized *** experimental validation showed that increasing the amount of Cu vapor improved the as-synthesized graphene growth rate and surface *** study provides a comprehensive understanding of vapor catalysis and the fundamental basis of vapor control for superclean graphene rapid growth.

关键词： vapor catalysis graphene growth chemical vapor deposition first-principles calculation

Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures

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Frontiers of physics 2024年第3期19卷 29-38页

作者： Wenlong Chu Xilong Zhou Ze Wang Xiulian Fan Xuehao Guo Cheng Li Jianling Yue Fangping Ouyang Jiong Zhao Yu Zhou School of Physics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083 China 2.State Key Laboratory of Powder Metallurgy Central South UniversityChangsha 410083 China 3.School of Physical Science and Technology Xinjiang UniversityUrumqi 830046 China 4.Department of Applied Physics The Hong Kong Polytechnic UniversityKowloonHong KongChina

Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic ***,the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted,also for the understanding of its formation ***,we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe_(2) nanosheets via chemical vapor ***-crystalline ultrathin 2D HfSe_(2) nanosheets were systematically grown by tuning the growth parameters,reaching the lateral size of 6‒40μm and the thickness down to 4.5 *** scalable amorphous HfO_(2)and HfSe_(2)heterostructures were achieved by the controllable oxidation,which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe_(2) *** crystal structure,elemental,and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf−O bonds,confirming the slow surface oxidation and lattice incorporation of oxygen *** relatively smooth surface roughness and electrical potential change of HfO_(2)−HfSe_(2) heterostructures indicate the excellent interface quality,which helps obtain the high performance memristor with high on/off ratio of 105 and long retention period over 9000 *** work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe_(2) nanosheets,also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.

关键词： chemical vapor deposition HfSe_(2)−HfO_(2) nanoelectronics

Recent Advances in Spin-coating Precursor Mediated chemical vapor deposition of Two-Dimensional Transition Metal Dichalcogenides

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Precision Chemistry 2024年第7期2卷 282-299页

作者： Dingyi Shen Yejun Jin Zucheng Zhang Rong Song Miaomiao Liu Wei Li Xin Li Ruixia Wu Bo Li Jia Li Bei Zhao Xidong Duan Hunan Key Laboratory of Two-Dimensional Materials State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan University410082 ChangshaChina Key Laboratory of Quantum Materials and Devices of Ministry of Education School of PhysicsSoutheast UniversityNanjing 211189China Key Laboratory of Two-Dimensional Materials State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan University410082 ChangshaChina

Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy *** vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D ***,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is *** spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the ***,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating *** Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD ***,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are ***,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are ***,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.

关键词： Spin-coating chemical vapor deposition Liquid precursor Substrate Two-dimensional materials Heterostructure Doping Film

chemical vapor deposition synthesis of V-doped MoS2

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Rare Metals 2023年第12期42卷 3985-3992页

作者： Yang Yang Qing-Rong Liang Chun-Li Zhu Guo-Zhong Zheng Jian Zhang Shou-Jun Zheng Yung-Chang Lin De-Zhi Zheng Jia-Dong Zhou School of Physics Beijing Institute of Technology School of Information and Electronics and Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology School of Physics Shaanxi Normal University The Institute of Scientific and Industrial Research Osaka University Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology

Van der Waals coupling with different stacking configurations can significantly affect the optical and electronic properties of ultrathin two-dimensional(2D)materials,which is an effective way to tune device ***,we report a salt-assisted chemical vapor deposition method for the synthesis of bilayer V-doped MoS2with 2H and 3R phases,which are demonstrated by the second harmonic generation and scanning transmission electron ***,the mobility of the 3R phase V-doped MoS2is 6.2% higher than that of the 2H *** first-principles calculations,we further reveal that this particular behavior is attributed to the stronger interlayer coupling of 3R compared to the 2H stacking *** research can be further generalized to other transition metal chalcogenides and will contribute to the development of electronic devices based on 2D materials in the future.

关键词： chemical vapor deposition Synthesis First-principles calculations 2H 3R

chemical vapor deposition growth behavior of graphene

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International Journal of Minerals,Metallurgy and Materials 2022年第1期29卷 136-143页

作者： Jie Wang Tengfei Fan Jianchen Lu Xiaoming Cai Lei Gao Jinming Cai Faculty of Materials Science and Engineering Kunming University of Science and TechnologyKunming 650093China Faculty of Mechanical and Electrical Engineering Kunming University of Science and TechnologyKunming 650093China Faculty of Science Kunming University of Science and TechnologyKunming 650093China

The optimized growth parameters of graphene with different morphologies,such as dendrites,rectangle,and hexagon,have been obtained by low-pressure chemical vapor deposition on polycrystalline copper *** evolution of fractal graphene,which grew on the polycrystalline copper substrate,has also been *** the equilibrium growth state of graphene is disrupted,its intrinsic hexagonal symmetry structure will change into a non-hexagonal symmetry ***,we present a systematic and comprehensive study of the evolution of graphene with different morphologies grown on solid copper as a function of the volume ratio of methane to hydrogen in a controllable ***,the phenomena of stitching snow-like graphene together and stacking graphene with different angles was also observed.

关键词： graphene chemical vapor deposition various morphologies dendrites methane

chemical vapor deposition growth and transport properties of MoS_(2)-2H thin layers using molybdenum and sulfur as precursors

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Rare Metals 2022年第10期41卷 3574-3578页

作者： Zhi-Tian Shi Hong-Bin Zhao Xiao-Qiang Chen Ge-Ming Wu Feng Wei Hai-Ling Tu Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing100088China National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous MetalsBeijing100088China

This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as *** some improvements were made to reduce the amount of metastable MoS_(2)-3 *** morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting *** characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 *** the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.

关键词： Molybdenum disulfide chemical vapor deposition Raman spectra Atomic force microscope Electronic transport properties

chemical vapor deposition for few‐layer two‐dimensional materials

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SmartMat 2023年第3期4卷 1-4页

作者： Qing Zhang Dechao Geng Wenping Hu Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityFuzhouChina Department of Chemistry National University of SingaporeSingaporeSingapore Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of ChemistrySchool of ScienceTianjin UniversityTianjinChina

chemical vapor deposition(CVD)approach offers a controllable strategy for preparing large‐area and high‐quality few‐layer(mainly bilayer or trilayer)twisted or untwisted two‐dimensional(2D)materials,and is predict... 详细信息

关键词： bilayer chemical vapor deposition trilayer two‐dimensional materials

Near room-temperature ferromagnetism in air-stable twodimensional Cr_(1−x)Te grown by chemical vapor deposition

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Nano Research 2022年第4期15卷 3763-3769页

作者： Zhansheng Gao Ming Tang Junwei Huang Jiabiao Chen Wei Ai Linglu Wu Xinyue Dong Yifei Ma Zheshan Zhang Lei Zhang Yaping Du Huixia Fu Hongtao Yuan Jinxiong Wu Feng Luo Tianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional MaterialsSchool of Materials Science and EngineeringNankai UniversityTianjin 300350China National Laboratory of Solid State Microstructures College of Engineering and Applied SciencesNanjing UniversityNanjing 210093China Center of Quantum Materials and Devices&College of Physics Chongqing UniversityChongqing 401331China Beijing National Laboratory for Molecular Sciences Beijing 100871China

Identifying air-stable two-dimensional(2D)ferromagnetism with high Curie temperature(T_(c))is highly desirable for its potential applications in next-generation ***,most of the work reported so far mainly focuses on promoting one specific key factor of 2D ferromagnetism(T_(c)or air stability),rather than comprehensive promotion of both of ***,ultrathin Cr_(1-x)Te crystals grown by chemical vapor deposition(CVD)show thickness-dependent T_(c)up to 285 *** out-of-plane ferromagnetic order is well preserved down to atomically thin limit(2.0 nm),as evidenced by anomalous Hall effect observed in non-encapsulated ***,the CVD-grown Cr_(1-x)Te nanosheets present excellent ambient stability,with no apparent change in surface roughness or electrical transport properties after exposure to air for *** work provides an alternative platform for investigation of intrinsic 2D ferromagnetism and development of innovative spintronic devices.

关键词： Cr1-xTe room-temperature ferromagnetism air stability anomalous Hall effect chemical vapor deposition

Direct synthesis of moirésuperlattice through chemical vapor deposition growth of monolayer WS_(2)on plasma-treated HOPG

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Nano Research 2022年第9期15卷 8587-8594页

作者： Xiaowen Zhou Zongnan Zhang Xinlong Zeng Yaping Wu Feiya Xu Chunmiao Zhang Xu Li Zhiming Wu Junyong Kang Department of Physics Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices at Education MinistryOSEDFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen 361005China

Vertical van der Waals(vdW)heterostructures composed of two-dimensional(2D)layered materials have recently attracted substantial interests due to their unique ***,the direct synthesis of moirésuperlattice remains a great challenge due to the difficulties in heterogeneous nucleation on smooth vdW ***,we report a controllable chemical vapor deposition growth of complete monolayer WS_(2)on highly ordered pyrolytic graphite(HOPG)substrates through the plasma *** results show that the morphologies of the grown WS_(2)have a strong dependence on the plasma parameters,including gas composition,source power,and treatment *** is found that the surface C–C bonds are broken in the plasma pretreated HOPG,and the formed small clusters can act as the nucleation sites for the subsequent growth of WS_(2).Moreover,the height of clusters dominates the growth mode of WS_(2)islands.A transition from a 2D mode to three-dimensional(3D)growth mode occurs when the height is higher than the interlayer spacing of the ***,diverse moirésuperlattices with different twist angles for WS_(2)/HOPG heterostructures are observed,and the formation mechanism is further analyzed by firstprinciples calculations.

关键词： chemical vapor deposition plasma pretreatment van der Waals(vdW)heterostructures moirésuperlattice