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Stretchable Luminescent Perovskite‑Polymer Hydrogels for Visual‑Digital Wearable Strain Sensor Textiles

Advanced Fiber Materials 2023年第5期5卷 1671-1684页

作者： Xinxin Li Long Chen Shuanglong Yuan Hua Tong Qilin Cheng Huidan Zeng Lei Wei Qichong Zhang Key Laboratory for Ultrafine Materials of Ministry of Education School of Materials Science and EngineeringEast China University of Science and TechnologyShanghai 200237China Key Laboratory of Multifunctional nanomaterials and Smart Systems Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Electrical and Electronic Engineering Nanyang Technological UniversitySingapore 639798Singapore

The integration of a display function with wearable interactive sensors offers a promising way to synchronously detect physiological signals and visualize pressure/***,combining these two functions in a strain sensor textile is a longstanding challenge due to the physical separation of sensors and display ***,a water-stable luminescent perovskite hydrogel(emission band approximately 25 nm)is constructed by blending as-prepared CsPbBr_(3)@PbBr(OH)with stretchable polyacrylamide(PAM)*** facile introduction of CsPbBr_(3)@PbBr(OH)endows the hydrogels with excellent optical properties and a high mechanical strength of 51.3 kPa at a fracture strain of 740%.Interestingly,the resulting hydrogels retain bright green fluorescence under conditions including water,ultraviolet light,and extensive stretching(>700%).As a proof-of-concept,a novel wearable stretchable strain sensor textile based on these hydrogels is developed,and it displays visual-digital synergetic strain detection *** can perceive various motions on the human body in real time with electronic output signals from changes in resistance and simultaneously readable optical output signals,whether on land or *** work provides a meaningful guide to rationally design perovskite hydrogels and accelerates the development of wearable visual-digital strain sensor textiles.

关键词： Metal halide perovskites Stretchable luminescent hydrogels Strain sensor textiles Amphibious Visualdigital synergies

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Printed thin film transistors with 10^(8)on/off ratios and photoelectrical synergistic characteristics using isoindigo-based polymers-enriched(9,8)carbon nanotubes

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nano Research 2022年第6期15卷 5517-5526页

作者： Wenjing Xu Min Li Masayoshi Tange Liqiang Li Juncai Hou Jun Ye Li Wei Yuan Chen Jianwen Zhao School of Materials Science and Engineering Shaanxi University of TechnologyHanzhong 723001China Division of nanodevices and Related nanomaterials Printable Electronics Research CentreSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNo.398 Ruoshui RoadSEIDSuzhou Industrial ParkSuzhou 215123China School of nano technology and nano bionics University of Science and Technology of ChinaHefei 230026China National and Local Joint Engineering Laboratory for Slag Comprehensive Utilization and Environmental technology Shaanxi University of TechnologyHanzhong 723001China nanomaterials Research institute National Institute of Advanced Industrial Science and Technology(AIST)Tsukuba 3058565Japan Advanced Materials Division Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNo.398 Ruoshui RoadSEIDSuzhou Industrial ParkSuzhou 215123China institute of High Performance Computing Agency for ScienceTechnology and ResearchSingapore 138632Singapore School of Chemical and Biomolecular Engineering The University of SydneyCamperdownNSW 2006Australia

Monochiral single-walled carbon nanotubes(SWCNTs)can enable high-performance carbon-based electronic devices and integrated ***,their fabrication often requires complex SWCNT purification and ***,we showed that isoindigo-based polymer derivatives(PDPPIID and PFIID)directly enriched(9,8)nanotubes from as-synthesized SWCNT powders selectively and efficiently to yield high concentration(9,8)nanotube *** selective wrapping mechanism was elucidated by classical full-atomistic molecular dynamic(MD)***-film transistors(TFTs)were fabricated by depositing the SWCNT ink into device channels using aerosol jet *** performance was strongly influenced by polymer residues,the deposition condition(humidity),and ink *** TFTs showed excellent device-to-device uniformity with 108 on/off ***,optoelectronic transistors were fabricated,and their photoelectrical neuromorphic characteristics,storage,memory,and logic functions were characterized under the pulsed light and voltage stimulations,demonstrating excellent application potentials.

关键词： monochiral carbon nanotube polymer wrapping printed thin-film transistor photoelectrical synergistic molecular dynamic simulation

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Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode

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Photonics Research 2021年第10期9卷 1907-1915页

作者： LONG GUO KE JIANG XIAOJUAN SUN ZIHUI ZHANG JIANWEI BEN YUPING JIA YONG WANG DABING LI State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Electronic Materials and Devices of Tianjin School of Electronics and Information EngineeringHebei University of TechnologyTianjin 300401China

AlGaN solar-blind ultraviolet(SBUV)detectors have potential application in fire monitoring,corona discharge monitoring,or biological *** the promotion of application requirements,there is an urgent demand for developing a high-performance vertical detector that can work at low bias or even zero *** this work,we have introduced a photoconductive gain mechanism into a vertical AlGaN SBUV detector and successfully realized it in a p-i-n photodiode via inserting a multiple-quantum-well(MQW)into the depletion *** MQW plays the role of trapping holes and increasing carrier lifetime due to its strong hole confinement effect and quantum confinement Stark ***,the electrons can go through the detector multiple times,inducing unipolar carrier transport ***,an AlGaN SBUV detector with a zero-bias peak responsivity of about 0.425 A/W at 233 nm is achieved,corresponding to an external quantum efficiency of 226%,indicating the existence of internal current *** compared with the device without MQW structure,the gain is estimated to be about 103 in *** investigation provides an alternative and effective approach to obtain high current gain in vertical AlGaN SBUV detectors at zero bias.

关键词： AlGaN quantum ultraviolet

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Device topological thermal management of β-Ga_(2)O_(3) Schottky barrier diodes

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Chinese Physics B 2021年第6期30卷 509-515页

作者： Yang-Tong Yu Xue-Qiang Xiang Xuan-Ze Zhou Kai Zhou Guang-Wei Xu Xiao-Long Zhao Shi-Bing Long School of Microelectronics University of Science and Technology of ChinaHefei 230026China

The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(3), their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_(2) O_(3) Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_(2) O_(3), work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_(2) O_(3) plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_(2) O_(3) SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_(2) O_(3) diode.

关键词： β-Ga_(2)O_(3)Schottky barrier diode thermal management TCAD simulation infrared thermal imaging camera

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Epitaxial growth ofβ-Ga_(2)O_(3)thin films on Ga_(2)O_(3)and Al_(2)O_(3)substrates by using pulsed laser deposition

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Journal of Advanced Dielectrics 2019年第4期9卷 47-53页

作者： Yuxin An Liyan Dai Ying Wu Biao Wu Yanfei Zhao Tong Liu Hui Hao Zhengcheng Li Gang Niu Jinping Zhang Zhiyong Quan Sunan Dingy Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal University Linfen 041004P.R.China Vacuum Interconnected nanotech Workstation(nano-X)suzhou institute of nano-tech and nano-bionics(SInano)Chinese Academy of Sciences(CAS) Suzhou 215123P.R.China Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric Research School of Electronic and Information Xi’an Jiaotong UniversityXi’an 710049P.R.China

In this work,we have successfully grown high quality epitaxialβ-Ga_(2)O_(3)thin films onβ-Ga_(2)O_(3)(100)and Al_(2)O_(3)(0001)substrates using pulsed laser deposition(PLD).By optimizing temperature and oxygen pressure,the best conditions were found to be 650-700℃and 0.5 *** further improve the quality of hetero-epitaxialβ-Ga_(2)O_(3),the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature *** the optical transmittance measurements,the films grown at 600-750℃exhibit a clear absorption edge at deep ultraviolet region around 250-275 nm *** resolution transmission electron microscope(HRTEM)images and X-ray diffraction(XRD)patterns demonstrate thatβ-Ga_(2)O_(3)(-201)//Al_(2)O_(3)(0001)epitaxial texture dominated the epitaxial oxide films on sapphire substrate,which opens up the possibilities of high power electric devices.

关键词： Oxide semiconductor β-Ga_(2)O_(3)epitaxy optical transmission spectrum pulsed laser deposition crystal growth

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在晶元级Si衬底上制备高深宽比SiO_2周期图形（英文）

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纳米技术与精密工程 2016年第6期14卷 395-401页

作者：戚永乐张瑞英仇伯仓王逸群王庶民中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室苏州215123 中国科学院苏州纳米技术与纳米仿生研究所纳米器件及相关材料研究部苏州215123 中国科学技术大学纳米学院苏州215123 清华大学深圳研究院深圳518055 中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台苏州215123 中国科学院上海微系统所信息功能材料国家重点实验室上海200050

本文主要介绍了通过步进式光刻、反相剥离和F基等离子体刻蚀工艺在晶元级Si衬底上制备SiO_2图形的过程,在6 in(15.24 cm)Si衬底上实现了均匀的周期分别为1.0μm和1.6μm、深宽比分别为2.3和1.4的SiO_2周期性掩膜.尤其在周期为1μm的条件... 详细信息

本文主要介绍了通过步进式光刻、反相剥离和F基等离子体刻蚀工艺在晶元级Si衬底上制备SiO_2图形的过程,在6 in(15.24 cm)Si衬底上实现了均匀的周期分别为1.0μm和1.6μm、深宽比分别为2.3和1.4的SiO_2周期性掩膜.尤其在周期为1μm的条件下,窗口通过过曝光和反相剥离工艺减小到330 nm,该尺寸超越了试验用步进式光刻设备的极限精度尺寸.在通过HF和KOH溶液处理后,得到了带有V型槽和较光滑侧壁的SiO图形的Si衬底,该图形适用于Ⅲ-Ⅴ半导体通过深宽比位错捕获技术的材料生长.这种均匀的晶元级图案制备方案促进了图形化Si衬底技术和Si基Ⅲ-Ⅴ半导体异质外延.

关键词：图形衬底异质外延高深宽比

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Spin injection into heavily-doped n-GaN via Schottky barrier

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Journal of Semiconductors 2023年第8期44卷 57-61页

作者： Zhenhao Sun Ning Tang Shuaiyu Chen Fan Zhang Haoran Fan Shixiong Zhang Rongxin Wang Xi Lin Jianping Liu Weikun Ge Bo Shen State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Frontiers Science Center for nano-optoelectronics&Collaboration Innovation Center of Quantum Matter Peking UniversityBeijing 100871China suzhou institute of nano-tech and nano-bionics(SInano) Chinese Academy of SciencesSuzhou 215123China International Center for Quantum Materials Peking UniversityBeijing 100871China

Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky *** spin injection efficiency of 21%was achieved at 1.7 *** was confirmed that the thin Schottky barrier formed between the heavily ndoped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the interface states.

关键词： GaN spin injection Schottky barrier magnetoresistance

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Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

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Fundamental Research 2021年第6期1卷 717-734页

作者： Yuxuan Chen Jianwei Ben Fujun Xu Jinchai Li Yang Chen Xiaojuan Sun Dabing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Fujian Key Laboratory of Semiconductor Materials and Applications CI Center for OSEDCollege of Physical Science and TechnologyXiamen UniversityXiamen 361005China

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet(UV)light-emitting diodes(LEDs)owing to their direct,wide,and adjustable energy ***-based devices have extensive appli-cability owing to their stable physico-chemical *** decades of research effort,significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline qual-ity,doping efficiency,and device *** this review,methods to obtain high-quality AlGaN-based materials,achieve high doping efficiency,and design UV-LED structures are summarized and ***,the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted.

关键词： AlGaN Growth of AlGaN-based material Doping UV-LED

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Hydrogen generation from methanol reforming under unprecedented mild conditions

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Chinese Chemical Letters 2017年第7期28卷 1353-1357页

作者： Yu-Lu Zhan Yang-Bin Shen Shu-Ping Li Bao-Hua Yue Xiao-Chun Zhou Department of Chemistry College of ScienceShanghai UniversityShanghai 200444China Division of Advanced nanomaterials Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215125China University of Chinese Academy of Sciences Beijing 100049China

A homogeneous catalyst [Cp＊Rh（NH3）（H2O）2]-（3＋） has been found for the clean conversion of methanol and water to hydrogen and carbon dioxide. The simple and easily available reaction steps can circumvent the formation of CO, therefore, making it possible to avoid inactivating catalysts and contaminating the hydrogen fuel. Different from conventional reforming method for hydrogen production, no additional alkaline or organic substances are required in this method. Valuable hydrogen can be obtained under ambient pressure at 70 C, corresponding TOF is 83.2 h 1. This is an unprecedented success in reforming methanol to hydrogen. Effects of reaction conditions, such as reaction temperature, initial methanol concentration and the initial p H value of buffer solution on the hydrogen evolution are all systematically investigated. In a certain range, higher reaction temperature will accelerate reaction rate. The slightly acidic condition is conducive to rapid hydrogen production. These findings are of great significance to the present establishment of the carbon-neutral methanol economy.

关键词： Homogeneous catalysts Methanol reforming Hydrogen Low temperature Low CO

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硅掺杂MOCVD氧化镓中的非故意掺杂效应:浅施主态

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Science China Materials 2023年第2期66卷 748-755页

作者：向学强李立恒陈陈徐光伟梁方舟谭鹏举周选择郝伟兵赵晓龙孙海定薛堪豪高南龙世兵 School of Microelectronics University of Science and Technology of ChinaHefei 230026China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China

本文利用MOCVD外延生长了不同载流子浓度的高质量β-Ga_(2)O_(3)薄膜并通过变温霍尔测量和二次离子质谱(SIMS)分析研究了薄膜中的浅施主态.通过拟合提取出薄膜中存在的两个电离能分别为~36和~140 meV的施主能级.进一步研究发现非故意掺... 详细信息

本文利用MOCVD外延生长了不同载流子浓度的高质量β-Ga_(2)O_(3)薄膜并通过变温霍尔测量和二次离子质谱(SIMS)分析研究了薄膜中的浅施主态.通过拟合提取出薄膜中存在的两个电离能分别为~36和~140 meV的施主能级.进一步研究发现非故意掺杂(UID)效应对这两个能级都有影响:第一个施主能级不仅来源于硅掺杂也来源于非故意碳掺杂取代Ga位,第二个施主能级主要来源于与非故意掺杂氢相关的双电荷缺陷.通过分析生长条件与施主态之间的关系结合密度泛函理论计算我们发现在生长过程中降低氧分压可能有助于降低UID效应.该工作为硅掺杂MOCVDβ-Ga_(2)O_(3)薄膜载流子浓度的精确控制奠定了基础.

关键词：载流子浓度施主能级非故意掺杂 MOCVD 外延生长霍尔测量氧化镓密度泛函理论计算

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