Epitaxial growth ofβ-Ga_(2)O_(3)thin films on Ga_(2)O_(3)and Al_(2)O_(3)substrates by using pulsed laser deposition

作     者：Yuxin An Liyan Dai Ying Wu Biao Wu Yanfei Zhao Tong Liu Hui Hao Zhengcheng Li Gang Niu Jinping Zhang Zhiyong Quan Sunan Dingy 

作者机构：Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal UniversityLinfen 041004P.R.China Vacuum Interconnected Nanotech Workstation(Nano-X)Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123P.R.China Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic and Information Xi’an Jiaotong UniversityXi’an 710049P.R.China 

出 版 物：《Journal of Advanced Dielectrics》 (先进电介质学报（英文）)

年 卷 期：2019年第9卷第4期

页      面：47-53页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China(61674165,61604167,61574160,61704183,61404159,11604366) the Natural Science Foundation of Jiangsu Province(BK20170432,BK20160397,BK20140394) the National Key R&D Program of China(2016YFB0401803) the Strategic Priority Research Program of the Chinese Academy of Science(XDA09020401) XRD,AFM and TEM experiments were performed at the Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences 

主　　题：Oxide semiconductor β-Ga_(2)O_(3)epitaxy optical transmission spectrum pulsed laser deposition crystal growth 

摘      要：In this work,we have successfully grown high quality epitaxialβ-Ga_(2)O_(3)thin films onβ-Ga_(2)O_(3)(100)and Al_(2)O_(3)(0001)substrates using pulsed laser deposition(PLD).By optimizing temperature and oxygen pressure,the best conditions were found to be 650-700℃and 0.5 *** further improve the quality of hetero-epitaxialβ-Ga_(2)O_(3),the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature *** the optical transmittance measurements,the films grown at 600-750℃exhibit a clear absorption edge at deep ultraviolet region around 250-275 nm *** resolution transmission electron microscope(HRTEM)images and X-ray diffraction(XRD)patterns demonstrate thatβ-Ga_(2)O_(3)(-201)//Al_(2)O_(3)(0001)epitaxial texture dominated the epitaxial oxide films on sapphire substrate,which opens up the possibilities of high power electric devices.