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High-efficiency photon-electron coupling resonant emission in GaN-based microdisks on Si

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Chinese Physics B 2020年第8期29卷 276-280页

作者： Menghan Liu Peng Chen Zili Xie Xiangqian Xiu Dunjun Chen Bin Liu Ping Han Yi Shi Rong Zhang Youdou Zheng Kai Cheng Liyang Zhang Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China Enkris Semiconductor Inc.NW-20 Nanopolis Suzhou99 Jinji Avenue 215123China

Resonance effects caused by the photon-electron interaction are a focus of attention in semiconductor optoelectronics,as they are able to increase the efficiency of ***-on-silicon microdisks can provide a perfect cavity structure for such resonance to *** we report GaN-based microdisks with different diameters,based on a standard blue LED wafer on a Si substrate.A confocal photoluminescence spectroscopy is performed to analyze the properties of all ***,we systematically study the effects of radial modes and axial modes of these microdisks on photon-electron coupling efficiency by using three-dimensional finite-difference time-domain *** thick microdisks,photon-electron coupling efficiency is found to greatly depend on the distributions of both the radial modes and the axial modes,and the inclined sidewalls make significant influences on the axial mode *** results are important for realization of high-efficiency resonant emission in GaN-based microcavity devices.

关键词： microdisks photon-electron coupling whispering gallery mode axial mode

Approach to Single-Mode Dominated Resonant Emission in Ga N-Based Square Microdisks on Si

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Chinese Physics Letters 2020年第5期37卷 59-63页

作者： Meng-Han Liu Peng Chen Zi-Li Xie Xiang-Qian Xiu Dun-Jun Chen Bin Liu Ping Han Yi Shi Rong Zhang You-Dou Zheng Kai Cheng Li-Yang Zhang Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing UniversityNanjing 210093 Enkris Semiconductor Inc.NW-20 Nanopolis SuzhouSuzhou 215123

Square microdisks with round corners are fabricated using a standard GaN-based blue LED on Si *** gallery-like inodes in the square microdisks are investigated by finite-difference time-domain *** simulation results reveal that the round corners in square microdisks can substantially suppress the number of light propagation paths and further reduce the number of optical modes.A con focal microphotoluminescence is performed to analyze the optical properties of the square microdisks at room *** single-mode dominant resonant emission is obtained in the square microdisk with corner radius of 1.5μm.

关键词： temperature. optical corners

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

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Chinese Physics Letters 2015年第9期32卷 145-148页

作者：柴旭朝周东刘斌谢自力韩平修向前陈鹏陆海张荣郑有炓 School of Electronic Science and Engineering National Laboratory of Solid State Microstructureand Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing University

The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee （PL） and x-ray photoelectron spectroscopy （XPS）. It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence （YL） and blue luminescence （BL） bands dramatically decrease after annealing at 700℃. At the annealing temperature higher than 900℃, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen an- nealed GaN decreases at the temperature ranging from 900℃ to 1000℃. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000℃.

关键词： Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

Structural characterization of Al_(0.55)Ga_(0.45)N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

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Chinese Physics B 2017年第4期26卷 468-471页

作者：徐庆君刘斌张士英陶涛谢自力修向前陈敦军陈鹏韩平张荣郑有炓 Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing University College of Optoelectronics Engineering Zaozhuang University

Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition *** mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map（RSM）.According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section ***,the lateral coherence length was determined from RSM as *** from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm^（-2） and 1.8×10^（10） cm^（-2）,which agree with the results observed from TEM.

关键词： AlxGa1-xN high-temperature AlN interlayer high resolution x-ay diffraction transmission elec-tron microscopy

Band Edge Emission Improvement by Energy Transfer in HybridⅢ-Nitride/Organic Semiconductor Nanostructure

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Chinese Physics Letters 2016年第10期33卷 132-135页

作者：蒋府龙刘亚莹李扬扬陈鹏刘斌谢自力修向前华雪梅韩平施毅张荣郑有炓 Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing University Nanjing University Institute of Optoelectronics at Yangzhou

GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-emciency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescenee （PL） spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.

关键词： GaN PPV MEH Nitride/Organic Semiconductor Nanostructure Band Edge Emission Improvement by Energy Transfer in Hybrid by in

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GaN基纳米阵列LED器件制备及发光特性

发光学报 2016年第12期37卷 1538-1544页

作者：智婷陶涛刘斌庄喆谢自力陈鹏张荣郑有炓南京大学电子科学与工程学院江苏南京210093

为了降低GaN材料中因应变诱导的量子斯托克斯效应,增加器件有源区内的电子-空穴波函数在实空间的交叠从而提高GaN基LEDs的发光效率,采用紫外软压印技术制备了均匀的周期性纳米柱阵列结构,结合常规LED器件微加工技术获得了In GaN/GaN基... 详细信息

为了降低GaN材料中因应变诱导的量子斯托克斯效应,增加器件有源区内的电子-空穴波函数在实空间的交叠从而提高GaN基LEDs的发光效率,采用紫外软压印技术制备了均匀的周期性纳米柱阵列结构,结合常规LED器件微加工技术获得了In GaN/GaN基蓝光与绿光纳米阵列LED器件并对其进行了表征分析。结果表明:纳米柱阵列LED器件具有均匀的发光和稳定的光电性能。纳米结构不仅有效缓解了量子阱中的应力积累(弛豫度~70%),提高了器件的辐射复合几率和出光效率,同时结合纳米柱侧壁的化学钝化处理进一步降低了器件有源区的缺陷密度,显著降低了LED器件的漏电流(~10-7),最终提高了器件的发光效率。

关键词： InGaN/GaN 发光二极管纳米柱纳米压印

InGaN基LED中极化效应对发光特性的影响

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微纳电子技术 2017年第8期54卷 509-513页

作者：刘亚莹蒋府龙刘梦涵方华杰高鹏陈鹏施毅张荣郑有炓南京大学电子科学与工程学院江苏省光电信息功能材料重点实验室南京210093 南京大学扬州光电研究院江苏扬州225009

主要利用电致发光的实验手段,研究了极化效应对InGaN基LED器件发光特性的影响。实验中发现,InGaN基LED器件的峰位随注入电流的增加产生了先蓝移后红移的现象,蓝光和绿光LED分别蓝移3 nm和8 nm;而AlGaInP基红光LED器件的峰位仅红移。进... 详细信息

主要利用电致发光的实验手段,研究了极化效应对InGaN基LED器件发光特性的影响。实验中发现,InGaN基LED器件的峰位随注入电流的增加产生了先蓝移后红移的现象,蓝光和绿光LED分别蓝移3 nm和8 nm;而AlGaInP基红光LED器件的峰位仅红移。进一步研究发现,InGaN基LED的外量子效率在注入电流为50 mA处开始剧烈下降,AlGaInP基LED的外量子效率在100 mA处才开始缓慢下降,并且两者呈现不同的下降规律。通过与模拟结果对比发现,InGaN基LED的效率在下降开始阶段与俄歇复合引起的效率下降规律类似。以上实验结果表明,InGaN基LED器件中存在极化电场,且该极化电场会对LED器件的效率衰减产生促进作用。

关键词： InGaN 电致发光峰位相对外量子效率极化效应俄歇复合

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碳化硅薄膜的力学性能理论研究

半导体光电 2016年第6期37卷 805-808,841页

作者：何国堂刘斌戴姜平谢自力韩平张荣王守旭黄旼朱健南京大学电子科学与工程学院江苏省光电信息功能材料重点实验室南京210093 南京电子器件研究所南京210016

目前,SiC薄膜在极端苛刻环境下的力学性质尚不明确,相关力学参数仍需进一步研究。文章采用模拟软件ANSYS对微尺寸的SiC薄膜在不同条件下的力学性能进行了理论分析。研究了SiC薄膜的面积和厚度对刚度的影响,结果表明,其刚度与薄膜面积成... 详细信息

目前,SiC薄膜在极端苛刻环境下的力学性质尚不明确,相关力学参数仍需进一步研究。文章采用模拟软件ANSYS对微尺寸的SiC薄膜在不同条件下的力学性能进行了理论分析。研究了SiC薄膜的面积和厚度对刚度的影响,结果表明,其刚度与薄膜面积成反比,与薄膜厚度的三次方成正比。其次,研究了材料中缺陷的尺寸及其位置对SiC薄膜力学性能的影响,模拟结果表明,缺陷的位置越接近薄膜中心,对刚度的影响越大;缺陷的尺寸越大,密度越高,薄膜的刚度越小。根据实验测得高温下杨氏模量数据,模拟计算发现SiC薄膜的刚度在290-2 500K范围内,随温度升高呈准线性下降趋势。

关键词： SiC薄膜 ANSYS数值模拟刚度缺陷温度

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GaN三角脊光场分布研究

光电子技术 2019年第4期39卷 232-237页

作者：葛成陈鹏周婧李一萌杨云飞冒小康张熬施毅张荣郑有炓南京大学电子科学与工程学院江苏省光电功能材料重点实验室南京210093 南京大学扬州光电研究院江苏扬州225009

使用时域有限差分法(FDTD)研究了蓝宝石衬底上的GaN三角脊的光学特性。分析了不同顶角角度的GaN三角脊的截面光场分布,结果表明,三角脊结构可以有效地使光聚集在顶部。分析了不同顶角角度下GaN三角脊的截面电场强度的最大值,结果表明,... 详细信息

使用时域有限差分法(FDTD)研究了蓝宝石衬底上的GaN三角脊的光学特性。分析了不同顶角角度的GaN三角脊的截面光场分布,结果表明,三角脊结构可以有效地使光聚集在顶部。分析了不同顶角角度下GaN三角脊的截面电场强度的最大值,结果表明,随着顶角角度的增大,其最大电场强度先逐渐增大后趋于小幅振荡。当其顶角角度较小时,仅在三角脊尖端处产生一个光场极大值区域,随着顶角角度的增大,在脊顶部会产生多个极大值区域。分析了GaN三角脊中量子阱层附近的光场分布,结果表明,随着顶角角度的增加,量子阱层附近的平均电场强度先基本不变后振荡增加,量子阱层附近的光场由均匀分布逐渐趋于不均匀分布。从研究中发现,当顶角角度处于40度至60度时,量子阱与光子耦合作用更强,这为基于GaN三角脊的高光子密度器件提供了器件设计的理论基础。

关键词：氮化镓三角脊时域有限差分法(FDTD) 电场强度