Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

作     者：柴旭朝 周东 刘斌 谢自力 韩平 修向前 陈鹏 陆海 张荣 郑有炓 

作者机构：School of Electronic Science and EngineeringNational Laboratory of Solid State Microstructureand Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing University 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2015年第32卷第9期

页      面：145-148页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619200 and 2012CB619304 the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305 the National Natural Science Foundation of China under Grant Nos 60990311,61274003,61422401,51461135002,60936004,61176063 and 61334009 the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BK20141320 the Scientific Innovation Research of College Graduate in Jiangsu Province under Grant No CXLX12.0049 a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions the Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center 

主　　题：Effect of High Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN 

摘      要：The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee （PL） and x-ray photoelectron spectroscopy （XPS）. It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence （YL） and blue luminescence （BL） bands dramatically decrease after annealing at 700℃. At the annealing temperature higher than 900℃, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen an- nealed GaN decreases at the temperature ranging from 900℃ to 1000℃. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000℃.