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Oxygen vacancy and Mn2+induced ferromagnetism in Mn-doped ZnO thin films

Science China(Technological Sciences) 2019年第10期62卷 1755-1759页

作者： GUAN SuJun NASU Naho ZHANG Yu tamamoto yuri YAMANOBE Maria ZHAO XinWei Department of Physics Tokyo University of ScienceTokyo162-8601Japan Department of Robotics The Open University of GuangdongGuangzhou510091China Department of Materials Science and Engineering Xihua UniversityChengdu610039China

With the purpose of investigating the origin of ferromagnetism(FM), Mn-doped Zn O thin films had been fabricated by radio frequency(rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped Zn O thin films was conducted by X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), and superconducting quantum interference device(SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mndoped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn2+on the ferromagnetic behavior, OVplays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.

关键词： oxygen vacancy Mn2+ ZnO thin films ferromagnetism

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Optimization of Crystal Structure Based on Experimentally Obtained XRD Patterns for Fluorescence of Sm³⁺-Doped TiO₂ Thin Films by Machine Learning

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Optics and Photonics Journal 2022年第6期12卷 147-155页

作者： yuri tamamoto Mariko Murayama Xiwei Zhao Department of Physics Tokyo University of Science Tokyo Japan Research Institute of Industrial Technology Toyo University Saitama Japan Department of Materials Science and Engineering Xihua University Chengdu China

The luminescence intensity of rare-earth ion-doped luminescent materials is closely related to the configuration of the anions around the rare-earth ions added to the host material and the lattice defects. And it is expected that this information will be reflected in the XRD pattern. In this study, the lumines-cence data and XRD patterns of Sm-doped TiO2 accumulated by our group are used to construct a model to predict the integrated luminescence intensity. The model was confirmed to be able to predict the integrated luminescence in-tensity with high accuracy. Furthermore, we found that the integrated lumi-nescence intensity of this system is closely related to the change in the position of the peak on the (200) plane of TiO2.

关键词： Machine Learning Phosphor TiO2

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Improved Interface of Encapsulating Sm-Doped TiO₂ Thin Films/RuO₂ Schottky Diodes for a Junction Spectropy Measurement

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Optics and Photonics Journal 2022年第10期12卷 215-224页

作者： Mariko Murayama yuri tamamoto Yingda Qian Asuka Ishizawa Simon Hammersley Iain F. Crowe Shuji Komuro Shuji Komuro Xinwei Zhao Department of Physics Tokyo University of Science Tokyo Japan Research Institute of Industrial Technology Toyo University Saitama Japan Photon Science Institute and School of Electrical and Electronic Engineering University of Manchester Manchester UK

The excitation process of rare-earth ions in oxide semiconductors for optical emission is thought to be related to defect levels within the band-gap of the host material. In order to improve understanding of the role defect levels play in the energy transfer process, junction spectroscopy techniques can be used to investigate the electrically active emission centres. It has been reported that TiO2 is sensitive to humidity at low temperatures, such as those employed when conducting junction spectroscopy measurements. However, there are not many discussions how to prevent this effect and to improve the quality of measurements. After optimization of samples such as fabrication of flat surface and encupsulant for preventing external effect, temperature dependent-capacitance measurements (C-T) were carried out to characterise shallow traps formed within TiO2 band-gap. TiO2 and Sm-doped TiO2 thin films were deposited on SrTiO3 (100) templates by laser ablaton and rectifying Ruthenium Oxide Schottky diodes deposited on the TiO2 surface by laser ablation. A Sm or Sm-related shallow trap was observed in the Arrhenius plot of TiO2:Sm. In this paper, we show the optimized sample fabrication/preparation process that stabilizes the junction spectroscopy measurements, even in the presence of humidity and we present initial results obtained on samples using these optimized processing techniques.

关键词： Rare Earth TiO2 Photoluminescence Junction Spectroscopy

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