Oxygen vacancy and Mn2+induced ferromagnetism in Mn-doped ZnO thin films

作     者：GUAN SuJun NASU Naho ZHANG Yu TAMAMOTO Yuri YAMANOBE Maria ZHAO XinWei 

作者机构：Department of PhysicsTokyo University of ScienceTokyo162-8601Japan Department of RoboticsThe Open University of GuangdongGuangzhou510091China Department of Materials Science and EngineeringXihua UniversityChengdu610039China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2019年第62卷第10期

页      面：1755-1759页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：oxygen vacancy Mn2+ ZnO thin films ferromagnetism 

摘      要：With the purpose of investigating the origin of ferromagnetism(FM), Mn-doped Zn O thin films had been fabricated by radio frequency(rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped Zn O thin films was conducted by X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), and superconducting quantum interference device(SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mndoped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn2+on the ferromagnetic behavior, OVplays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.